36 research outputs found
Design optimization of the gallium nitride high electron mobility transistor with graphene and boron nitride heat-spreading elements
No full textThe self-heating effect has long been a persistent issue for high electron mobility transistors based on gallium
nitride due to their inherently poor heat dissipation capability. Although a wide variety of thermal management
solutions has to date been proposed, the problem of the extremely non-uniform heat dissipation at the micrometer
scale is still challenging. It has recently been demonstrated, however, that the performance of gallium nitride high
electron mobility transistors can be substantially improved by the introduction of various heat-spreading elements
based on graphene, boron nitride or diamond. In this paper, using numerical simulation, we carried out a design
optimization procedure for a normally-off gallium nitride high electron mobility transistor containing both graphene
and cubic boron nitride layers. First, a screening experiment based on a very economical Plackett−Burman design
was performed in order to find the most critical geometric parameters that influence the dc characteristics. After
that, a full two-level factorial experiment consisting of three factors was implemented and an optimized parameter
set was yielded. By applying this set, the output power was increased by 11.35%. The combination of the most
significant parameters does not include any factors related to the heat-spreading layers
Design optimization of the gallium nitride heterostructure field-effect transistor with a graphene heat-removal system
No full textThis paper is dedicated to the design optimization of the GaN HFET with a graphene heat-removal system
enhanced by a trench in the passivation layer filled by diamond
Modeling the impacts of heavy charged particles on electrical characteristics of n-MOSFET device structure
No full textThe use of microelectronic products in outer space is possible if protection is provided against special external influencing factors, including radiation effect. For digital integrated circuits manufactured using submicron CMOS processes, the greatest influence is exerted by radiation effects caused by exposure to a heavy charged particle. The use of special design tools in the development of dual-purpose microcircuits, with increased resistance to the impact of heavy charged particles, prevents single events from occurring. Thus, the use of modern software products for device and technological modeling in microelectronics when developing the element base of radiation-resistant microcircuits for space purposes will cut the time to develop new products and make it possible to modernize (improve performance) already existing device and circuitry solutions. The paper delivers the results of modeling the impacts of heavy charged particles with a magnitude of linear energy transfer equal to 1.81, 10.1, 18.8, 55.0 MeV·cm2/mg, corresponding to nitrogen ions 15N+4 with an energy E = 1,87 MeV; argon 40Ar+12 with an energy E = 372 MeV; ferrum 56Fe+15 with an energy E = 523 MeV; xenon 131Xe+35 with an energy E = 1217 MeV, on electrical characteristics of n-MOSFET device structure. The dependences of the maximum drain current IС on the motion trajectory of a heavy charged particle and the ambient temperature are shown
INSULATED-GATE BIPOLAR TRANSISTOR FORMED IN THE BULK SILICON AND USING «SILICON ON INSULATOR» TECHNOLOGY
No full textThe results of the optimization of design and technological parameters device structures insulated-gate bipolar transistor (IGBT), formed in bulk silicon and using «Silicon on Insulator» (SOI) technology are presented. The specific features of the functioning of various constructive solutions IGBT are studied. A construction of SOI-IGBT structure with multiple gates, which allows a step change in the switched current, is suggested and investigated
Physic-topological (electrical) model of a junction field effect transistor, taking into account the degradation of operational characteristics under the influence of penetrating radiation
No full textThe results of applying the compact model of junction field effect transistors developed and integrated into the Cadence software product for control to evaluate the hardness of a two-stage differential amplifier circuit under the combined or separate exposure to fluences of electrons, protons and neutrons are presented
DESIGN OF HIGH-SPEED IGBT DEVICE
No full textResults of the investigation of IGBT manufacturing technology parameters influence on its dynamic features are presented. The important role of impurities concentration in various parts of IGBT structure (concentration level in the emitter of the bipolar transistor as apart of the IGBT structure, implantation dose in the MOS channel, the energy of ions implanted in the base of the bipolar transistor) was shown. These effects are discussed with the standpoint of dynamic characteristics of charge carriers. It was discovered that the level of impurity concentration in the emitter does not affect on the device dynamic features and reveals only small influence from the level of impurity concentration in the base. More effect is determined by the dose and energy of implanted ions under the doping of the MOS channel: the two-time dose increasing leads 20 % decreasing of switch on and switch off times of IGBT and the 20 % increasing of the ion energy leads to 25 % increasing of output impulse duration
Device and technology simulation of IGBT on SOI structure
No full textStatic and dynamics characteristics of the power IGBT device at “Silicon-On-Insulate” structure
were simulated. Analysis of the characteristics of such structure in comparison with the IGBT at the bulk
silicon are presented. Advantages of IGBT device at SOI are revealed
Insulated-gate bipolar transistor formed in the bulk silicon and using «Silicon on insulator» technology
No full textПредставлены результаты оптимизации конструктивно-технологических параметров
приборных структур биполярного транзистора с изолированным затвором (БТИЗ),
сформированного в стандартном кремнии и по технологии «Кремний на изоляторе» (КНИ).
Рассмотрены особенности функционирования различных конструктивных решений БТИЗ.
Предложена и исследована конструкция БТИЗ на КНИ структуре с несколькими затворами,
что обеспечивает ступенчатое изменение коммутируемого тока.The results of the optimization of design and technological parameters device structures insulated-
gate bipolar transistor (IGBT), formed in bulk silicon and using «Silicon on Insulator» (SOI)
technology are presented. The specific features of the functioning of various constructive solutions
IGBT are studied. A construction of SOI-IGBT structure with multiple gates, which allows a step
change in the switched current, is suggested and investigated
CONSTRUCTION AND TECHNOLOGICAL CHARACTERISTICSOF WIDE BANDGAP SEMICONDUCTORS SENSORS
No full textThe development and research of new constructive solutions, materials and technologies for sensor systems production is an actual problem. The transistor with high electron mobility (HEMT) is increasingly being used in such systems. The device-technological simulation of the characteristics of HEMT, based on AlGaN / GaN using different substrate materials has implemented. The influence of the percentage of Al and Ga in combination Alх Gaх-1N on the characteristics of considered unit has studied
Gallium nitride high electron mobility transistor with an effective graphene-based heat removal system
No full textThe self-heating effect is a major problem for gallium nitride electronic, optoelectronic and photonic devices. Average temperature increase and non-uniform distribution of dissipated power in the gallium nitride high electron mobility transistor lead to the forming of a hot spot in the vicinity of the conducting channel and to degradation of the drain current, output power and gain, as well as poor reliability. The purpose of this work is to develop the design using numerical simulation and to study the thermal phenomena that occur in the gallium nitride high-electron mobility transistor with a graphene-based heat removal system. The objects of the research are the structures fabricated on sapphire, silicon and silicon carbide substrates. The subject of the research is the electrical, frequency and thermal characteristics of the gallium nitride high-electron mobility transistor with a graphene-based heat removal system. The calculation results show that the integration of a graphene-based heat removal element into the design of the high electron mobility transistor can effectively mitigate the self-heating effect and thus improve the device performance. The advantage of the proposed concept is that the graphene-based heat removal element is structurally connected with a heat sink and aims at removing heat immediately from the maximum temperature region, providing an additional heat escape channel. The obtained results can be used by the electronics industry of the Republic of Belarus for developing the hardware components of gallium nitride power electronics
