521 research outputs found
Investigation of the electromagnetic compatibility of a frequency-controlled electric drive with supercapacitors
No full textIn the paper, the electromagnetic compatibility of a frequency converter with a power supply is investigated. Comparison of the variants of the electric drive with conventional capacitors and supercapacitors, which are connected directly to the DC link of the frequency converter, is given. The simulation results in the MATLAB package and the experimental study of the electric drive with using the power quality analyzer are presented. The paper presents the forms of currents and voltages at the input of the frequency converter, as well as their harmonics composition. Conclusions about the influence of the supercapacitor block on the electromagnetic compatibility of electric drive to the mains are made. © 2018 I.V. Plotnikov and I.S. Uimin.17-08-00188I. V. Plotnikov and I. S. Uimin The reported study was funded by RFBR according to the research project № 17-08-0018
Changes in the structure and function of biological communities in the Aral Sea, with particular reference to the northern part (Small Aral Sea), 1985-1995: A review
No full textN. V. Aladin, A. A. Filippov, I. S. Plotnikov, M. I. Orlova, W. D. William
Plotnikov Alleged – a Boost to the International Promotion of Croatian Science Represented by the Technical Faculty
No full textDaje se sustavni prikaz navodne pojave longitudinalnog raspršenja svjetlosti. Tu je pojavu prvi uočio Plotnikov, pa je nazvana Plotnikovljevim učinkom. Pojava se prezentira od početnih zabluda do konačnoga osporavanja. U uvodu se daje prikaz Zeemanova, Starkova, Comptonova, Ramanova i lažnoga Plotnikovljeva učinka. Opisuju se i događanja u svijetu i Zagrebu povezana s Ramanovim i Plotnikovljevim efektom. Dokumentirano se iznose podaci o Šplaitovoj disertaciji na Tehničkom fakultetu u Zagrebu te pisana polemika između Šplaita s jedne i Katalinića i Vrkljana s druge strane. Ističe se i Katalinićev osvrt na članke R. S. Krishnana i S. M. Mitre, indijskih fizičara koji su bili sljedbenici nobelovca C.V. Ramana i koji nisu potvrdili Plotnikova. Plotnikovljev učinak prepoznat je kao Mieov učinak, poznat od prije. Plotnikovljev učinak znatno je utjecao na aktivnosti i na istraživalački rad hrvatskih fizičara, biologa i fiziologa, ali i stranih renomiranih fizičara i kemičara. Taj je učinak potaknuo i aktivno učešće fizičara Katalinića na međunarodnom znanstvenom skupu u Parizu 1937. godine, gdje je nastupio kao dopisni član Jugoslavenske akademije znanosti i umjetnosti.A comprehensive account is given of the alleged phenomenon of longitudinal light scattering, a phenomenon first detected by Plotnikov and named after him the Plotnikov effect. The subject matter is presented from the initial delusion to the final refutation. The introduction describes the Zeeman, Starkov, Compton, Raman and the deceptive Plotnikov effects. Developments in Zagreb and abroad associated with the Raman and the deceptive Plotnikov effect are also discussed. Documented information is provided on Šplait’s dissertation at the Technical Faculty in Zagreb and a written polemics between Šplait on one side and Katalinić and Vrkljan on the other. Katalinić’s review of articles by R.S. Krishnan and S.M. Mitra, the Indian physicists, the followers of Nobel laureate C.V. Raman, who would not confirm Plotnikov’s alleged finding, is included as well. The Plotnikov effect was identified as the earlier known Mie effect. The Plotnikov effect greatly influenced the thinking and research work of Croatian physicists, biologists and physiologists, and some distinguished foreign physicists and chemists. It was also the topic with which physicist Katalinić took an active part at the International Scientific Symposium in Paris in 1937 as corresponding member of the Yugoslav Academy of Sciences and Arts
A simplified Bixon-Jortner-Plotnikov method for fast calculation of radiationless transfer rates in symmetric molecules
No full textA simplified form of the Bixon-Jortner-Plotnikov (BJP) method is derived for calculation of internal conversion (IC) rate in a symmetrical molecule. The rate is a sum of contributions from individual transitions between vibronic states. For each transition, vibrational modes are divided into two groups, the promoting (one or two modes per electronic transition) and the surrounding ones. In the case of the non-totally symmetric transition in a symmetric molecule, the overwhelming majority of transitions do not contribute to the overall rate. Moreover, the promoting and surrounding modes belong to different symmetry representations and can be separated. It is proposed to deal with the promoting modes directly, while approximating the effect of the surrounding modes by a Pekarian function. The method was tested on polyacenes and it was shown that the calculated IC rates are in agreement with the experimental ones. The simplified method can be applied for calculating the rates of non-totally symmetric transition in a symmetric molecule, if its point symmetry group does not change after transition
Semiconductors V. 36, I. 08
No full textdc.description[en_US]Semiconductors -- August 2002
Volume 36, Issue 8, pp. 837-951
ATOMIC STRUCTURE AND NONELECTRONIC PROPERTIES OF SEMICONDUCTORS
Measurements of Parameters of the Low-Temperature Molecular-Beam Epitaxy of GaAs
V. V. Preobrazhenskii, M. A. Putyato, and B. R. Semyagin
pp. 837-840 Full Text: PDF (60 kB)
Threshold of Inelastic Strain Formation in Si and GaAs Surface Layers under Multiple Pulsed Laser Irradiation
S. V. Vintsents, A. V. Zoteev, and G. S. Plotnikov
pp. 841-844 Full Text: PDF (58 kB)
Dissociation Energies of a CiCs Complex and the A Center in Silicon
N. I. Boyarkina, S. A. Smagulova, and A. A. Artem'ev
pp. 845-847 Full Text: PDF (46 kB)
ATOMIC STRUCTURE AND NONELECTRONIC PROPERTIES
Initial Stages of Growth of Diamond Island Films on Crystalline Silicon
N. A. Feoktistov, V. V. Afanas'ev, V. G. Golubev, S. A. Grudinkin, S. A. Kukushkin, and V. G. Melekhin
pp. 848-851 Full Text: PDF (141 kB)
ELECTRONIC AND OPTICAL PROPERTIES OF SEMICONDUCTORS
Local Structure of Zinc Impurity Centers in Lead Chalcogenides and Pb1 ��� xSnxTe Solid Solutions
S. A. Nemov and N. P. Seregin
pp. 852-854 Full Text: PDF (100 kB)
Influence of Tellurium Impurity on the Properties of Ga1 ��� XInXAsYSb1 ��� Y (X > 0.22) Solid Solutions
T. I. Voronina, T. S. Lagunova, E. V. Kunitsyna, Ya. A. Parkhomenko, M. A. Sipovskaya, and Yu. P. Yakovlev
pp. 855-862 Full Text: PDF (104 kB)
Optical Properties of Bulk and Epitaxial Unordered GaxIn1 ��� xP Semiconductor Alloys
Ya. I. Vyklyuk, V. G. Deibuk, and S. V. Zolotarev
pp. 863-868 Full Text: PDF (89 kB)
Electrical and Thermoelectric Properties of p-Ag2Te
F. F. Aliev, E. M. Kerimova, and S. A. Aliev
pp. 869-873 Full Text: PDF (74 kB)
Photoconductivity of Coarse-Grained CdTe Polycrystals
S. A. Medvedev, Yu. V. Klevkov, S. A. Kolosov, V. S. Krivobok, and A. F. Plotnikov
pp. 874-877 Full Text: PDF (51 kB)
Time-Resolved Photoluminescence of Polycrystalline GaN Layers on Metal Substrates
A. V. Andrianov, K. Yamada, H. Tampo, H. Asahi, V. Yu. Nekrasov, Z. N. Petrovskaya, O. M. Sreseli, and N. N. Zinov'ev
pp. 878-882 Full Text: PDF (66 kB)
SEMICONDUCTOR STRUCTURES, INTERFACES, AND SURFACES
Low-Threshold Defect Formation and Modification of Ge Surface Layer under Elastic and Elastoplastic Pulsed Laser Effects
S. V. Vintsents, V. B. Zaitsev, A. V. Zoteev, G. S. Plotnikov, A. I. Rodionov, and A. V. Chervyakov
pp. 883-888 Full Text: PDF (79 kB)
Electron Tunneling through a Double Barrier in a Reverse-Biased Metal���Oxide���Silicon Structure
G. G. Kareva, M. I. Vexler, I. V. Grekhov, and A. F. Shulekin
pp. 889-894 Full Text: PDF (89 kB)
LOW-DIMENSIONAL SYSTEMS
Structure of Heterointerfaces and Photoluminescence Properties of GaAs/AlAs Superlattices Grown on (311)A and (311)B Surfaces: Comparative Analysis
G. A. Lyubas, N. N. Ledentsov, D. Litvinov, B. R. Semyagin, I. P. Soshnikov, V. M. Ustinov, V. V. Bolotov, and D. Gerthsen
pp. 895-898 Full Text: PDF (138 kB)
Wavelength of Emission from InGaAsN Quantum Wells as a Function of Composition of the Quaternary Compound
A. E. Zhukov, A. R. Kovsh, E. S. Semenova, V. M. Ustinov, L. Wei, J.-S. Wang, and J. Y. Chi
pp. 899-902 Full Text: PDF (66 kB)
Two-Dimensional p���n Junction under Equilibrium Conditions
A. Sh. Achoyan, A. �. Yesayan, �. M. Kazaryan, and S. G. Petrosyan
pp. 903-907 Full Text: PDF (70 kB)
Calculations of the Charge-Carrier Mobility and the Thermoelectric Figure of Merit for Multiple-Quantum-Well Structures
D. A. Pshenai-Severin and Yu. I. Ravich
pp. 908-915 Full Text: PDF (91 kB)
Nonlinear Response and Nonlinear Coherent Generation in Resonant-Tunneling Diode in a Broad Frequency Range
V. F. Elesin, I. Yu. Kateev, and A. I. Podlivaev
pp. 916-920 Full Text: PDF (61 kB)
Anomalies of the Fractional Quantum Hall Effect in a Wide Ballistic Wire
Z. D. Kvon, E. B. Olshanetsky, A. E. Plotnikov, A. I. Toropov, and J. C. Portal
pp. 921-923 Full Text: PDF (46 kB)
Special Features of Electrical Conductivity in a Parabolic Quantum Well in a Magnetic Field
E. P. Sinyavskii and R. A. Khamidullin
pp. 924-928 Full Text: PDF (59 kB)
Manifestation of A(+) Centers in the Luminescence of Two-Dimensional GaAs/AlGaAs Structures
Yu. L. Ivanov, N. V. Agrinskaya, P. V. Petrov, V. M. Ustinov, and G. �. Tsyrlin
pp. 929-931 Full Text: PDF (43 kB)
One-Dimensional Photonic Crystal Obtained by Vertical Anisotropic Etching of Silicon
V. A. Tolmachev, L. S. Granitsyna, E. N. Vlasova, B. Z. Volchek, A. V. Nashchekin, A. D. Remenyuk, and E. V. Astrova
pp. 932-935 Full Text: PDF (263 kB)
AMORPHOUS, VITREOUS, AND POROUS SEMICONDUCTORS
Gamma-Irradiation-Induced Metastable States of Undoped Amorphous Hydrogenated Silicon
M. S. Ablova, G. S. Kulikov, and S. K. Persheev
pp. 936-940 Full Text: PDF (73 kB)
Fabrication and Properties of Amorphous Hydrogenated Boron Carbide Films
A. S. Anan'ev, O. I. Kon'kov, V. M. Lebedev, A. N. Novokhatski, E. I. Terukov, and I. N. Trapeznikova
pp. 941-943 Full Text: PDF (47 kB)
PHYSICS OF SEMICONDUCTOR DEVICES
Lattice-Matched GaInPAsSb/InAs Structures for Devices of Infrared Optoelectronics
M. Aidaraliev, N. V. Zotova, S. A. Karandashev, B. A. Matveev, M. A. Remennyi, N. M. Stus', G. N. Talalakin, V. V. Shustov, V. V. Kuznetsov, and E. A. Kognovitskaya
pp. 944-949 Full Text: PDF (71 kB)
PERSONALIA
Viktor Il'ich Fistul' (on his 75th birthday)
pp. 950-951 Full Text: PDF (71 kB)dc.description.contributor[en_US]dc.description.contributor[en_US
Semiconductors V. 36, I. 08
No full textSemiconductors -- August 2002
Volume 36, Issue 8, pp. 837-951
ATOMIC STRUCTURE AND NONELECTRONIC PROPERTIES OF SEMICONDUCTORS
Measurements of Parameters of the Low-Temperature Molecular-Beam Epitaxy of GaAs
V. V. Preobrazhenskii, M. A. Putyato, and B. R. Semyagin
pp. 837-840 Full Text: PDF (60 kB)
Threshold of Inelastic Strain Formation in Si and GaAs Surface Layers under Multiple Pulsed Laser Irradiation
S. V. Vintsents, A. V. Zoteev, and G. S. Plotnikov
pp. 841-844 Full Text: PDF (58 kB)
Dissociation Energies of a CiCs Complex and the A Center in Silicon
N. I. Boyarkina, S. A. Smagulova, and A. A. Artem'ev
pp. 845-847 Full Text: PDF (46 kB)
ATOMIC STRUCTURE AND NONELECTRONIC PROPERTIES
Initial Stages of Growth of Diamond Island Films on Crystalline Silicon
N. A. Feoktistov, V. V. Afanas'ev, V. G. Golubev, S. A. Grudinkin, S. A. Kukushkin, and V. G. Melekhin
pp. 848-851 Full Text: PDF (141 kB)
ELECTRONIC AND OPTICAL PROPERTIES OF SEMICONDUCTORS
Local Structure of Zinc Impurity Centers in Lead Chalcogenides and Pb1 – xSnxTe Solid Solutions
S. A. Nemov and N. P. Seregin
pp. 852-854 Full Text: PDF (100 kB)
Influence of Tellurium Impurity on the Properties of Ga1 – XInXAsYSb1 – Y (X > 0.22) Solid Solutions
T. I. Voronina, T. S. Lagunova, E. V. Kunitsyna, Ya. A. Parkhomenko, M. A. Sipovskaya, and Yu. P. Yakovlev
pp. 855-862 Full Text: PDF (104 kB)
Optical Properties of Bulk and Epitaxial Unordered GaxIn1 – xP Semiconductor Alloys
Ya. I. Vyklyuk, V. G. Deibuk, and S. V. Zolotarev
pp. 863-868 Full Text: PDF (89 kB)
Electrical and Thermoelectric Properties of p-Ag2Te
F. F. Aliev, E. M. Kerimova, and S. A. Aliev
pp. 869-873 Full Text: PDF (74 kB)
Photoconductivity of Coarse-Grained CdTe Polycrystals
S. A. Medvedev, Yu. V. Klevkov, S. A. Kolosov, V. S. Krivobok, and A. F. Plotnikov
pp. 874-877 Full Text: PDF (51 kB)
Time-Resolved Photoluminescence of Polycrystalline GaN Layers on Metal Substrates
A. V. Andrianov, K. Yamada, H. Tampo, H. Asahi, V. Yu. Nekrasov, Z. N. Petrovskaya, O. M. Sreseli, and N. N. Zinov'ev
pp. 878-882 Full Text: PDF (66 kB)
SEMICONDUCTOR STRUCTURES, INTERFACES, AND SURFACES
Low-Threshold Defect Formation and Modification of Ge Surface Layer under Elastic and Elastoplastic Pulsed Laser Effects
S. V. Vintsents, V. B. Zaitsev, A. V. Zoteev, G. S. Plotnikov, A. I. Rodionov, and A. V. Chervyakov
pp. 883-888 Full Text: PDF (79 kB)
Electron Tunneling through a Double Barrier in a Reverse-Biased Metal–Oxide–Silicon Structure
G. G. Kareva, M. I. Vexler, I. V. Grekhov, and A. F. Shulekin
pp. 889-894 Full Text: PDF (89 kB)
LOW-DIMENSIONAL SYSTEMS
Structure of Heterointerfaces and Photoluminescence Properties of GaAs/AlAs Superlattices Grown on (311)A and (311)B Surfaces: Comparative Analysis
G. A. Lyubas, N. N. Ledentsov, D. Litvinov, B. R. Semyagin, I. P. Soshnikov, V. M. Ustinov, V. V. Bolotov, and D. Gerthsen
pp. 895-898 Full Text: PDF (138 kB)
Wavelength of Emission from InGaAsN Quantum Wells as a Function of Composition of the Quaternary Compound
A. E. Zhukov, A. R. Kovsh, E. S. Semenova, V. M. Ustinov, L. Wei, J.-S. Wang, and J. Y. Chi
pp. 899-902 Full Text: PDF (66 kB)
Two-Dimensional p–n Junction under Equilibrium Conditions
A. Sh. Achoyan, A. É. Yesayan, É. M. Kazaryan, and S. G. Petrosyan
pp. 903-907 Full Text: PDF (70 kB)
Calculations of the Charge-Carrier Mobility and the Thermoelectric Figure of Merit for Multiple-Quantum-Well Structures
D. A. Pshenai-Severin and Yu. I. Ravich
pp. 908-915 Full Text: PDF (91 kB)
Nonlinear Response and Nonlinear Coherent Generation in Resonant-Tunneling Diode in a Broad Frequency Range
V. F. Elesin, I. Yu. Kateev, and A. I. Podlivaev
pp. 916-920 Full Text: PDF (61 kB)
Anomalies of the Fractional Quantum Hall Effect in a Wide Ballistic Wire
Z. D. Kvon, E. B. Olshanetsky, A. E. Plotnikov, A. I. Toropov, and J. C. Portal
pp. 921-923 Full Text: PDF (46 kB)
Special Features of Electrical Conductivity in a Parabolic Quantum Well in a Magnetic Field
E. P. Sinyavskii and R. A. Khamidullin
pp. 924-928 Full Text: PDF (59 kB)
Manifestation of A(+) Centers in the Luminescence of Two-Dimensional GaAs/AlGaAs Structures
Yu. L. Ivanov, N. V. Agrinskaya, P. V. Petrov, V. M. Ustinov, and G. É. Tsyrlin
pp. 929-931 Full Text: PDF (43 kB)
One-Dimensional Photonic Crystal Obtained by Vertical Anisotropic Etching of Silicon
V. A. Tolmachev, L. S. Granitsyna, E. N. Vlasova, B. Z. Volchek, A. V. Nashchekin, A. D. Remenyuk, and E. V. Astrova
pp. 932-935 Full Text: PDF (263 kB)
AMORPHOUS, VITREOUS, AND POROUS SEMICONDUCTORS
Gamma-Irradiation-Induced Metastable States of Undoped Amorphous Hydrogenated Silicon
M. S. Ablova, G. S. Kulikov, and S. K. Persheev
pp. 936-940 Full Text: PDF (73 kB)
Fabrication and Properties of Amorphous Hydrogenated Boron Carbide Films
A. S. Anan'ev, O. I. Kon'kov, V. M. Lebedev, A. N. Novokhatski, E. I. Terukov, and I. N. Trapeznikova
pp. 941-943 Full Text: PDF (47 kB)
PHYSICS OF SEMICONDUCTOR DEVICES
Lattice-Matched GaInPAsSb/InAs Structures for Devices of Infrared Optoelectronics
M. Aidaraliev, N. V. Zotova, S. A. Karandashev, B. A. Matveev, M. A. Remennyi, N. M. Stus', G. N. Talalakin, V. V. Shustov, V. V. Kuznetsov, and E. A. Kognovitskaya
pp. 944-949 Full Text: PDF (71 kB)
PERSONALIA
Viktor Il'ich Fistul' (on his 75th birthday)
pp. 950-951 Full Text: PDF (71 kB)Archived web conten
Plotnikov I.S., Large saline lakes of former USSR: a summary review. Hydrobiologia 267
No full textAbstract Seven of the largest lakes in central Asia (former USSR) are saline: Caspian Sea, Aral Sea, lakes Balkhash, Issyk-Kul, the Chany complex, Alakul and Tengiz. They range in salinity from sometimes < 3 g l -1 t o l 9 g l -1 . The paper provides a summary review of their major physico-chemical and biological features. Several are threatened by activities in their drainage basins, particularly diversion of inflowing waters
The T1 state of p-nitroaniline and related molecules: a CNDO/S study
No full textThe nature of the lowest energy triplet state (T1) of p-nitroaniline (PNA), N,N-dimethyl-p-nitroaniline (DMPNA) and nitrobenzene (NB) is reexamd. using the semiempirical CNDO/S-CI method with selected parameter options. In the case of the unperturbed mols. the short-axis polarized p* A- singlet excitation. Computations suggest, however, that polar solvents strongly stabilize the PNA and DMPNA p* <- p charge-transfer triplet relative to other excitations, whereas specific solvent hydrogen-bonded interactions stabilize the p* <- n(s) triplet of NB below those of p* <- p character. These assignments allow a rationalization of phosphorescence lifetime data, Tn <- T1 absorption measurements and relative photochem. behavior
Monotonous and stepwise character of deformation accumulation as a hierarchically organized process under high-temperature deformation of aluminum-magnesium alloy
No full textReview of the book: Skuridina, S. A. (2007). F. M. Dostoevsky’s poetics of the name. Voronezh: Nauchnaia kniga.
No full textThe author provides a generally positive review of the book by S. A. Skurdina dedicated to the study of proper names in F. M. Dostoyevsky's novels The Brothers Karamazov and The Adolescent. The book's author suggests a classification of names based on formal, semantic and social criteria and refers to different documentary sources which clarify the history of names and the motivation of their use by the writer. The reviewer, however, points out that the names are studied separately from the contexts and the study as a whole lacks for methodological explanations.Публикация представляет собой рецензию на книгу С. А. Скуридиной, написанную в русле литературной ономастики и посвященную поэтонимам в романах Ф. М. Достоевского «Подросток» и «Братья Карамазовы». Рецензент отмечает добросовестность, с которой в исследовании представлены обзор развития литературной ономастики как комплексной филологической дисциплины и история изучения поэтонимов в произведениях Ф. М. Достоевского. Положительно оценивается предлагаемая автором классификация поэтонимов (антропонимов, топонимов, зоонимов и мифонимов), встречающихся в романах «Подросток» и «Братья Карамазовы»: так, антропонимы подразделяются на основании принадлежности номинируемых персонажей к тому или иному социальному слою, что позволяет высветить социальный колорит имени. К достоинствам работы относится и то, что автор привлекает к анализу элементы текстологического комментария, обращается к документальным источникам – черновикам романов, материалам из переписки писателя, воспоминаниям его современников – с целью выяснить историю создания онима. В то же время рецензент с сожалением указывает на то, что поэтонимы изучаются изолированно от контекстов, в которых они функционируют. Среди недостатков книги также называются отсутствие четко изложенной методологии и изолированное друг от друга рассмотрение ономастиконов двух романов
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