1,721,121 research outputs found
Correlation Between the Chemical Bonding and the Physical Properties of the CNx Films Obtained by Pulsed Laser Deposition from C Targets in Low Pressure of N2
No full textMultilayer Titanium Nitride and Silicide Structures Synthesized by Multipulse Excimer Laser Irradiation
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About the Nature of Particulates Covering the Surface of Thin Films Obtained by Reactive Pulsed Laser Deposition
No full textWe report new results concerning the composition and the structure of the particulates covering the surface of the thin films deposited by reactive pulsed laser deposition (RPLD) from a Ti target in low-pressure methane. We show that the small particulates having diameters smaller than 0.5 mu m have a composition and a morphology identical to that of the deposited films which consist of pure, stoichiometric, cubic TiC with a lattice parameter of 0.436 nm. In contrast, the larger particulates with diameters up to 3 mu m are a mixture of TiC and prevalent unreacted Ti. All particulates seem to have a spherical geometrical shape at the moment of their impact onto the collector. We consider that this feature is congruent with the formation of particulates by expulsion in a liquid phase from the melted layer existing inside the crater forming on the target's surface under the action of the pulsed laser irradiation
CNx/Si Thin Heterostructures for Miniaturized Temperature Sensors
Get PDFCNx /Si thin heterostructures were synthesized on Si ^111& substrates by XeCl* excimer laser
~l5308 nm, t FWHM>30 ns) ablation of nuclear grade graphite targets in 5 Pa nitrogen at room
temperature. We investigated the current–voltage and capacitance–voltage characteristics of
heterostructures obtained at 77 and 300 K. We monitored their conductance and capacitance as a
function of the bias voltage applied, in the 100 Hz–1 MHz frequency range. Our results revealed the
formation of deep localized electron states both inside the thin CNx films and at the CNx /Si
substrate interface. The investigations evidenced that conduction through the CNx /Si thin
heterostructure is of trap-assisted tunneling type. The experimental studies show quite a large
decrease in capacitance and increase in conductance with the increase of applied frequency. The
capacitance of the CNx /Si thin heterostructures increases with a decrease of the temperature. All the
results support the potential development of new types of high sensitivity temperature sensors
Multilayer titanium nitride and silicide synthesized by multipulse excimer laser irradiation
No full textSynthesis of Metallic and Semiconductor Nitrides by Multipulse Laser Irradiation of Solid Samples in Ambient Gases.
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