1,720,963 research outputs found
Electrodeposited Ni/Ge and germanide schottky barriers for nanoelectronics applications
No full textIn recent years metal/semiconductor Schottky barriers have found numerous applications in nanoelectronics. The work presented in this thesis focuses on the improvement of a few of the relevant devices using electrodeposition of metal on Ge for Schottky barrier fabrication. This low energy metallisation technique offers numerous advantages over the physical vapour deposition techniques. Electrical characteristics of the grown diodes show a high quality rectifying behaviour with extremely low leakage currents even on highly doped Ge. A non-Arrhenius behaviour of the temperature dependence is observed for the grown Ni/Ge diodes on lowly doped Ge that is explained by a spatial variation of the barrier heights. The inhomogeneity of the barrier hights is explained in line with an intrinsic surface states model for Ge. The understanding of the intrinsic surface states will help to create ohmic contacts for doped n-MOSFETs. NiGe were formed single phase by annealing. Results reveal that by using these high-quality germanide Schottky barriers as the source/drain, the subthreshold leakage currents of a Schottky barrier MOSFET could be minimised, in particular, due to the very low drain/body junction leakage current exhibited by the electrodeposited diodes. The Ni/Ge diodes on highly doped Ge show negative differential conductance at low temperature. This effect is attributed to the intervalley electron transfer in Ge conduction band to a low mobility valley. The results show experimentally that Schottky junctions could be used for hot electron injection in transferred-electron devices. A vertical Co/Ni/Si structure has been fabricated for spin injection and detection in Si. It is shown that the system functions electrically well although no magnetoresistance indicative of spin injection was observed
Dataset for: Direct observation of surface charge redistribution in active nanoscale conducting channels by Kelvin Probe Microscopy
No full textThis dataset supports the publication: Ye, Sheng et al. (2020). Direct observation of dynamic surface charge redistribution in active nanoscale conducting channels by Kelvin Probe Microscopy in Nanotechnology IOP.</span
Fabrication and simulation of nanostructures for domain wall magnetoresistance studies on nickel
No full textWe report the use of electron beam lithography and a bilayer lifto® process to fabricate magnetic Ni nanostructures with constriction widths in the range of 22 to 41 nm. The structures fabricated correspond to the nanobridge geometry. Reproducibility and control over the final nanostructure geometry were observed when using the fabrication process introduced, these two qualities are important in order to carry out a more systematic analysis of domain wall magnetoresistance (DWMR). On the other hand, micromagnetic simulations of structures with the nanobridge geometry were carried out using not only the dimensions of the fabricated nanostructures but also smaller dimensions thought to be achievable with further optimization of the fabrication process. It was found that domain walls with a reduced length of 42.5 nm can be obtained using the nanobridge geometry. Furthermore, the anisotropic magnetoresistance (AMR) effect was calculated numerically and it was found to be smaller than the DWMR, this makes the nanobridge geometry a good candidate for future measurements of the magnetoresistive effect due to domain wall scattering
Improved silicon quantum dots single electron transfer operation with hydrogen silsesquioxane resist technology
No full textHydrogen silsesquioxane (HSQ) is a high resolution electron beam resist that offers a high etch resistance and small line edge roughness. In our previous work, we showed that by using this resist we can fabricate very high density double quantum dot (QD) single electron transistors on silicon-on-insulator (SOI) substrates for applications in quantum information processing. We observed that 80% of 144 fabricated devices had dimensional variations of ±5 nm with a standard deviation of 3.4 nm. Here, we report on the functionality of our Si QD devices through electrical measurements and further HSQ process optimisations, which improve the effective side gates control on single electron operation
Dataset for: Tuneable single electron characteristics through electrical stress in silicon transistors towards a quantum field programmable gate array
No full textData set for paper to be submitted:
AUTHORS: Joseph William Hillier, Kouta Ibukuro, Shouyu Xie, Zuo Li, Fayong Liu, Muhammad Khaled Husain, Yoshishige Tsuchiya, Harvey Rutt and Shinichi Saito
TITLE: Tunable single hole characteristics through electrical stress in silicon metal-oxide-semiconductor field-effect transistors
JOURNAL: Journal of Applied Physics
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Dataset for Random telegraph signals caused by a single dopant in a metal oxide semiconductor field effect transistor at low temperature
No full textThis dataset supports the paper 'Random telegraph signals caused by a single dopant in a metal oxide semiconductor field effect transistor at low temperature' in AIP advances.</span
Raw data for manuscript titled " Transversal Symmetry Breaking in Novel Photonic Crystal Waveguide: Innovative Manner to Master Defect Band Dispersion Relation "
No full textRaw Data of figures presented in the paper " Transversal Symmetry Breaking in Novel Photonic Crystal Waveguide: Innovative Manner to Master Defect Band Dispersion Relation " presented at the 49th International Conference on Solid State Devices and Materials (SSDM2017), Sendai, Japan.
Raw Data discloses simulation results presented in this paper.</span
Random telegraph noise from resonant tunnelling at low temperatures
No full textThe Random Telegraph Noise (RTN) in an advanced Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) is consideredto be triggered by just one electron or one hole, and its importance is recognised upon the aggressive scaling. However, the detailed nature of the charge trap remains to be investigated due to the difficulty to find out the exact device, which shows the RTN feature over statistical variations. Here, we show the RTN can be observed from virtually all devices at low temperatures, and provide a methodology to enable a systematic way to identify the bias conditions to observe the RTN. We found that theRTN was observed at the verge of the Coulomb blockade in the stability diagram of a parasitic Single-Hole-Transistor (SHT), and we have successfully identified the locations of the charge traps by measuring the bias dependence of the RTN
Investigating stability and tunability of quantum dot transport in silicon MOSFETs via the application of electrical stress
No full textData set for: Hillier, J. W. et al. (2021). Investigating stability and tunability of quantum dot transport in silicon MOSFETs via the application of electrical stress in IOP Journal of Physics D: Applied Physics</span
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