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    Deposition and characterization of copper indium gallium sulphide thin films fabricated by chemical vapour deposition with metal chloride precursors

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    Chemical vapour deposition (CVD) is a widely used method in the optoelectronics and semiconductor industries, producing high purity thin films, in crystalline, amorphous and epitaxial phases. A variety of materials can be produced in this way although for the most part use of the technique has focussed on polysilicon, silicon dioxide, silicon nitride and metallic materials. The advantages of CVD processing, which offers offer superior quality compared to conventional methods such as sputtering or co-evaporation, include conformality, coverage, and stoichiometry control. The process should also be more economical and scalable to large substrates as it can take place at atmospheric pressure rather than under vacuum conditions
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