1,721,060 research outputs found
A Single-Chip K-Band CMOS FMCW Radar Transceiver
No full textThis paper presents a K-band FMCW radar transceiver IC, which is integrated in 0.13-μm CMOS technology. In the transmitter part, the class-C topology is adopted in the VCO block to achieve good phase noise performance. In the receiver part, the high gain of the LNA sufficiently suppresses the noise of the next stages to achieve a good noise figure in the receiver and the linearity of the receiver was improved by adoption of a gain control block, thereby achieving a wide dynamic range. As a result, a conversion gain of 35.7 dB, a P1dB of -12.7 dBm, and a DSB noise figure of 5.5 dB are achieved in the receiver part. The tuning range of 23.8~24.5 GHz and the phase noise of -103.1 dBc/Hz @ 1MHz offset are achieved in the transmitter part. The transceiver chip consumes 181.5 mW from a 1.5 V power supply. Using this chip, the K-band FMCW radar module is implemented and verified by measurement of the distance of an object
A 1.83 GHz 28.5 dBm CMOS Power Up-Mixer
No full textA power up-mixer is proposed in this letter. A merged CMOS linear power amplifier (PA) and mixer allows low current consumption and smaller chip size than a conventional integrated transmitter including a mixer and a CMOS linear PA. The chip is fabricated in a 0.18 mu m CMOS process and in an integrated-passive-device. Measurements show a drain efficiency of 27% at 27.2 dBm of 1 dB compression point (P1dB) output power from 1.75 to 1.95 GHz. Power conversion gain is 26.4 dB and LO leakage is -43 dBc
A 79 GHz g(m)-boosted Sub-Harmonic Mixer with High Conversion Gain in 65nm CMOS
No full textIn this paper, a 79 GHz gm-boosted subharmonic mixer with high conversion gain is presented. As a gm-boosting technique, a transformer based feedback network with an NMOS bleeding path is proposed to achieve high conversion gain. The differential LO-driven subharmonic mixer has a simple structure and operates at low LO power. The measurement results show a conversion gain of 1.6 dB at a LO power of −5 dBm, a noise figure of 13 dB, and a 2LO-to-RF isolation of 38 dB. The power consumption of the sub-harmonic mixer is 12 mW. The circuit was fabricated using 65-nm CMOS technology with a chip area of 0.69×0.45 mm
Millimeter wave UWB pulse radar front-end ICs
No full textThe 26 GHz and 79 GHz UWB frequency bands are used for short-range radar applications for automobile. In this paper, single chip front-end ICs for both frequency bands are presented. The pulsed oscillator at 26 GHz can produce UWB short pulses. It consumes power only during short duty cycles; thus, it allows a power-efficient radar. A stereo radar, which comprises two synchronized radars, is demonstrated with the ICs. Hybrid beam forming techniques based on base-band delay are also demonstrated. The pulsed front-end architecture of the proposed 79 GHz UWB pulse radar is discussed, which is expected to reduce power consumption. The performance of some circuit elements is also reported
CMOS LNA with Darlington-pair for UWB systems
No full textA 3-5 GHz ultra-wideband CMOS low-noise amplifier fabricated using 0.18 mu m CMOS process is presented. To achieve wideband characteristics, a two-frequency matching method for input matching is proposed. A cutoff-frequency (f(T)) doubler using Darlington-pair is employed to achieve high gain from 2.4 to 5.4 GHz. The LNA achieves an average gain of 21 dB, input return loss less than -10 dB, and a noise figure of 2.85-4.5 dB at a power consumption of 23 mW The input 1 dB gain compression point (P1 dB) and IIP3 are -22 and -14 dBm at 4 GHz, respectively
Design and Analysis of 239 GHz CMOS Push-Push Transformer-Based VCO With High Efficiency and Wide Tuning Range
No full textA push-push transformer-based voltage-controlled oscillator (VCO) is proposed and analyzed to achieve high efficiency and a wide tuning range at sub-terahertz (THz) frequencies. Analyses show that the coupling factor of the transformer to obtain high output power (P-OUT) has to be carefully chosen by consideration of gate-to-drain voltage gain as well as matching impedances seen from the drain and to the gate of a VCO transistor at the 2nd harmonic frequency (2f(o)). Analysis also shows that the transformer-based resonator allows a wide tuning range. In addition, it has been shown that the introduction of a parallel inductor to a varactor leads to high P-OUT and low phase noise. The proposed 239 GHz VCO with a 65 nm CMOS process demonstrates the high efficiency of 1.45%, the P-OUT of -4.8 dBm, and the wide tuning range of 12.5% with a supply voltage of 1.2 V
Analysis and Design of CMOS Amplitude Modulator With Digitally Controlled Variable Attenuator
No full textA multimode RF amplitude modulator and a digitally controlled variable attenuator (VATT) are presented. A comprehensive analysis of nonlinear distortion in a current source modulated amplitude modulator is studied in this paper. To improve the dynamic range and reduce local oscillator leakage, dual power modes and a cascode transistor for amplitude modulation are employed in the amplitude modulator. The amplitude modulator consists of a switching transistor with a modulating current source, which allows low power consumption and linear amplitude modulation. The digitally controlled VATT is designed for power level control. Five stages are cascaded to attain the attenuation levels over 32 dB. By using the proposed adaptive type attenuator, we can get the optimized attenuation stages and port matching at all the attenuation states. The maximum output power of the modulator is 7.8 dBm, while consuming 18 mA of dc current. In the low power mode, the modulator consumes less than 1 mA of dc current. The current consumption is scaled down to 7 mA when the modulated WCDMA signal output power is 0.9 dBm and the EDGE signal output power is 1.2 dBm. The measured minimum insertion loss of the VATT is 2.5 dB and the maximum attenuation control range is 34.8 dB at 1.95 GHz. The control resolution is 1 dB. The worst case S11 and S22 responses were measured to be -16 dB. There is no power consumption at the VATT. The chip is implemented with a 0.18-mu m CMOS process. The total chip size is 1 x 0.9 mm(2)
Low-power CMOS polar modulator for multiband and multimode RF transmitter
No full textA low-power polar modulator for a multiband and multimode RF transmitter is presented. The multimode capability of the modulator was tested with WCDMA and GSM/EDGE system requirements. The polar modulator consists of a saturated amplifier with a modulating current source which allows low power consumption. The multiband operation is obtained by tuning an LC output matching network
RF CMOS Power Amplifiers for Mobile Terminals
No full textRecent progress in development of CMOS power amplifiers for mobile terminals is reviewed, focusing first on switching mode power amplifiers, which are used for transmitters with constant envelope modulation and polar transmitters. Then, various transmission line transformers are evaluated. Finally, linear power amplifiers, and linearization techniques, are discussed. Although CMOS devices are less linear than other devices, additional functions can be easily integrated with CMOS power amplifiers in the same IC. Therefore, CMOS power amplifiers are expected to have potential applications after various linearity and efficiency enhancement techniques are used
A SiGeBiCMOS transmitter module for IMT2000 applications
No full textThis letter describes a Tx module for IMT2000 applications consisting of an up-conversion mixer and a variable-gain driver amplifier. The up-conversion mixer, based on the Gilbert active topology has a power gain of 4.8 dB and consumes 15-mA current from a 3-V supply. The variable-gain driver amplifier comprises a gain-controlled stage of the current steering structure and a common emitter stage, and has a variable-gain range of over 30 dB with 30.3-mA current consumption. The Tx module achieves a gain error of less than 1.2 dB over a 30-dB gain range, an output IP3 of 25 dBm, and an output P1 dB of 7.4 dBm at the maximum gain of 24.5 dB. It occupies 1.0 x 1.2 mm.This work was
supported in part by KOSEF under the ERC program through the MINT Research
Center, Dongguk University
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