206,885 research outputs found
Scalability and robustness of a market-based network resource allocation system
No full textIn this paper, we consider issues related to scalability and robustness in designing a market-based multi-agent system that allocates bandwidth in a communications network. Specifically, an empirical evaluation is carried out to assess the system performance under a variety of design configurations in order to provide an insight into network deployment issues. This extends our previous work in which we developed an application that makes use of market-based software agents that compete in decentralised marketplaces to buy and sell bandwidth resources. Our new results show that given a light to moderate network traffic load, partitioning the network into a few regions, each with a separate market server, gives a higher call success rate than by using a single market. Moreover, a trade-off in the number of regions was also noted between the average call success rate and the number of messages received per market server. Finally, given the possibility of market failures, we observe that the average call success rates increase with an increasing number of markets until a maximum is reached
Scalability and Robustness of a Network Resource Allocation System Using Market-Based Agents
No full textIn this paper, we consider issues associated with scalability and robustness in designing a market-based multi-agent system that allocates bandwidth in a communications network. Specifically, an empirical evaluation is carried out to assess the system performance under a variety of design configurations in order to provide an insight into network deployment issues. This extends our previous work in which we developed an application that makes use of market-based software agents that compete in decentralised marketplaces to buy and sell bandwidth resources in a network that is partitioned into regions, each with a separate market server. We investigate the average call success rate and average message load per market server, as the number of markets are scaled up in a fixed size network. The same investigations are performed in the presence of single market failures. Finally, for both the failure and non-failure cases, a trade-off is found between their average call success rates and message load per server in order to find an optimum number of regions to deploy in the network
Maculabatis Haque & White & Cavanagh & Biswas & Hossain 2021
No full textGenus Maculabatis The new genus Maculabatis, as well as several new species, was recently assigned to a group of morphologically similar stingray species (Last et al. 2016c; Manjaji-Matsumoto & Last 2016). The recently described Maculabatis bineeshi was recorded in Bangladesh for the first time in this study (Figure 3), with a total of 21 specimens recorded, both morphologically (Manjaji-Matsumoto & Last 2016) and genetically. M. arabica (Figure 4) was genetically identified from one specimen and morphologically identified from another 18 specimens. In addition, seven specimens that were morphologically most consistent with M. macrura were examined. M. macrura has only recently been established as a valid species, and is morphologically very similar to M. gerrardi (Last et al. 2016a), with distinguishing characteristics poorly understood. Further genetic studies are therefore recommended to assign these specimens to the correct species.Published as part of Haque, Alifa Bintha, White, William T., Cavanagh, Rachel D., Biswas, Aparna Riti & Hossain, Nazia, 2021, New records of elasmobranchs in the Bay of Bengal, Bangladesh: further taxonomic research is essential, pp. 211-230 in Zootaxa 5027 (2) on page 217, DOI: 10.11646/zootaxa.5027.2.4, http://zenodo.org/record/544823
Accurate modeling of gate capacitance in deep submicron MOSFETs with high-K gate-dielectrics
No full textGate capacitance of metal-oxide-semiconductor devices with ultra-thin high-K gate-dielectric materials is calculated taking into account the penetration of wave functions into the gate-dielectric. When penetration effects are neglected, the gate capacitance is independent of the dielectric material for a given equivalent oxide thickness (EOT). Our selfconsistent numerical results show that in the presence of wave function penetration, even for the same EOT, gate capacitance depends on the gate-dielectric material. Calculated gate capacitance is higher for materials with lower conduction band offsets with silicon. We have investigated the effects of substrate doping density on the relative error in gate capacitance due to neglecting wave function penetration. It is found that the error decreases with increasing doping density. We also show that accurate calculation of the gate capacitance including wave function penetration is not critically dependent on the value of the electron effective mass in the gate-dielectric region
Supporting data for Dynamic Aliphatic Polyester Elastomers Crosslinked with Aliphatic Dianhydrides
No full textA full description can be found in the README.txt file. The files below include raw characterization data used in all analyses. Subfolders and files are organized using the nomenclature established in the manuscript, which is also described in the “README.txt” file. Raw data from raw nuclear magnetic resonance spectroscopy kinetics are organized based on type of kinetics experiment, temperature and timepoint. All raw nuclear magnetic resonance spectroscopy data files can be accessed using MNova or Bruker software. CDX files can be viewed with ChemDraw, which is a proprietary software distributed by CambridgeSoft. All other files including .dpt files from infrared spectroscopy (IR) data can be opened using Microsoft Excel.These files contain primary data along with associated output from instrumentation supporting all results reported in Meyersohn, M. et. al. "Dynamic Aliphatic Polyester Elastomers Crosslinked with Aliphatic Dianhydrides." In Meyersohn, M. et. al. we found: Chemically crosslinked elastomers are a class of polymeric materials with properties that render them useful as adhesives, sealants, and in other engineering applications. Poly(γ-methyl-ε-caprolactone) (PγMCL) is a hydrolytically degradable and compostable aliphatic polyester that can be biosourced and exhibits competitive mechanical properties to traditional elastomers when chemically crosslinked. A typical limitation of chemically crosslinked elastomers is that they cannot be reprocessed; however, incorporation of dynamic covalent bonds (DCBs) can allow for bonds to reversibly break and reform under an external stimulus, usually heat. In this work we the study dynamic behavior and mechanical properties of PγMCL elastomers synthesized from aliphatic dianhydride crosslinkers. The crosslinked elastomers in this work were synthesized using the commercially available crosslinkers, 1,2,4,5-cyclohexanetetracarboxylic dianhydride (CHDA), and 1,2,3,4-cyclobutanetetracarboxylic dianhydride (CBDA) and three-arm hydroxy-telechelic PγMCL star polymers. Stress relaxation experiments on the crosslinked networks showed an Arrhenius dependence of viscosity with temperature with an activation energy of 118 ± 8 kJ/mol, which agrees well with the activation energy of the exchange chemistry obtained from small molecule model studies. Dynamic mechanical thermal analysis and rheological experiments confirmed the dynamic nature of the networks and provided insight into the mechanism of exchange (i.e., associative, or dissociative). Tensile testing showed that these materials can exhibit high strains at break and low Young’s moduli, characteristic of soft, strong elastomers. By controlling the exchange chemistry and understanding the effect of macromolecular structure on mechanical properties, we prepared high performing elastomers that can be rapidly reprocessed at moderately elevated temperatures.CHE-1901635Meyersohn, Marianne S; Haque, Farihah M; Hillmyer, Marc A. (2023). Supporting data for Dynamic Aliphatic Polyester Elastomers Crosslinked with Aliphatic Dianhydrides. Retrieved from the University Digital Conservancy, https://doi.org/10.13020/qewn-zh14
Effects of neglecting carrier tunneling on electrostatic potential in calculating direct tunneling gate current in deep submicron MOSFETs
No full textWe investigate the validity of the assumption of neglecting carrier tunneling effects on self-consistent electrostatic potential in calculating direct tunneling gate current in deep submicron MOSFETs. Comparison between simulated and experimental results shows that for accurate modeling of direct tunneling current, tunneling effects on potential profile need to be considered. The relative error in gate current due to neglecting carrier tunneling is higher at higher gate voltages and increases with decreasing oxide thickness. We also study the direct tunneling gate current in MOSFETs with high- gate dielectrics
Gate Capacitance of deep submicron MOSFETS with high-K gate dielectrics
No full textWe study gate capacitance of deep submicron MOSFETs with high-K gate dielectrics. Schrödinger’s equation is solved by applying an open boundary condition at silicon-gate dielectric interface. Self-consistent numerical results reveal that accounting for wave function penetration into the gate dielectric causes the carrier distribution to be shifted closer to the gate dielectric. This effect increases with increasing gate voltage and also increases with the decreasing conduction band offset of the gate dielectric material with silicon. Gate capacitance calculated from conventional modeling is found to be independent of dielectric materials for a given equivalent oxide thickness (EOT). But our study shows that when wave function penetration into the gate dielectric is considered, gate capacitance for a given EOT increases with a decrease in the conduction band offset. Effects of substrate doping density on gate capacitance are found to be negligible when wave function penetration effects are incorporated
Computationally efficient quantum-mechanical technique to calculate direct tunnelling gate leakage current in metal-oxide-semiconductor structures
No full textWe propose a computationally efficient, accurate and numerically stable quantum- mechanical technique to calculate the direct tunneling (DT)gate current in metal-oxide-semiconductor (MOS) structures. Knowledge of the imaginary part G of the complex eigenenergy of the quasi-bound inversion layer states is required to estimate the lifetimes of these states. Exploiting the numerically obtained exponential dependence of G on the thickness of the gate-dielectric layer even in the sub-1-nm-thickness regime, we have simplified the determination of G in devices where it is too small to be calculated directly. It is also shown that the MOS electrostatics, calculated self-consistently with open boundary conditions, is independent of the dielectric layer tickness provided that the other parameters remain unchanged. Utilizing these findings, a computationally efficient and numerically stable method is developed for calculating the tunneling current–gate voltage characteristics. The validity of the proposed model is demonstrated by comparing simulation results with experimental data. Sample calculations for MOS transistors with high-K gate-dielectric materials are also presented. This model is particularly suitable for DT current calculation in devices with thicker gate dielectrics and in device or process characterization from the tunneling current measurement
RETHINKING INDUSTRIAL POLICY
No full textDespite the hold of the neoliberal orthodoxy on policy making in developing countries, industrial policy remains important for the promotion of industrial development. However, the context for the design of industrial policy has profoundly changed as a result of new rules governing international trade, the rise of global value chains and marketing networks, and other aspects of globalization. Traditionally, the case for industrial policy has been framed in terms of “market failures” but the paper argues that that is not a sufficient basis. After addressing the traditional points of criticism, an attempt is made to outline the “domains” of industrial policy in the current circumstances, especially for industrially lagging countries. As country contexts differ widely there are no satisfactory blueprints for policy making that countries can readily adopt. As in production decisions, considerable ingenuity and innovation is needed in designing policies. This is all the more necessary as the WTO rules have become increasingly stringent and the rise of international trading networks has created new barriers for young firms to enter the world market. These developments have changed the context but not the importance of policy in industrial development. The paper identifies areas where government intervention is needed and can still make a positive difference.
Performance Evaluation of a Bambara Ground Nut Sheller
No full textRosana G. Moreira, Editor-in-Chief; Texas A&M UniversityThis is a paper from International Commission of Agricultural Engineering (CIGR, Commission Internationale du Genie Rural) E-Journal Volume 6 (2004): A. Atiku, N. Aviara, and M. Haque. Performance Evaluation of a Bambara Ground Nut Sheller. (July 2004)
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