1,721,022 research outputs found
New uncooled thermal IR detector using silicon diode - micromachined isolated isolated silicon diode for IR detection (MISIR)
No full text초소형 굴절 실리콘렌즈 제조방법
No full textA method of fabricating a refractive silicon microlens by using micro-machining technology. The method of fabricating a refractive silicon microlens according to the present invention comprises the steps of forming a boron-doped region on a silicon substrate, and selectively removing regions of the substrate except for the boron-doped region to form a lens comprised of only the boron-doped region. With the method of the present invention, it is possible to fabricate a two-dimensional infrared silicon microlens array. By using such a two-dimensional infrared silicon microlens array in an infrared sensor, the detectivity of the infrared sensor can be increased by 3.4 times, which is the refraction index of silicon. In addition, the two-dimensional infrared silicon microlens array of the present invention can be used with commercial infrared telecommunication devices
비휘발성 정적 랜덤 액세스 메모리 장치
No full textA non-volatile static random access memory device configured by adding a floating gate type metal oxide semiconductor device to an SRAM including a pair of access elements respectively switched on and off in accordance with the state of a signal on an address line and adapted to establish a data transfer path between memory cell and associated negative and positive data lines, and a pair of inverters respectively coupled to the access elements, thereby allowing the SRAM to exhibit non-volatile memory characteristics. The floating gate type MOS device has a silicon substrate, a tunneling oxide film formed over the silicon substrate, a floating gate formed on the tunneling oxide film, an oxide film formed over the floating gate, a control gate formed over the oxide film, and a source and a drain respectively formed in an upper surface of the silicon substrate at both sides of the control gate. The source and drain of the floating gate type MOS device are electrically connected at the source and drain thereof to the input terminals of the inverters of the SRAM, respectively, so that it provides non-volatile memory characteristics to the SRAM by virtue of a difference in threshold voltage caused by charge stored in the floating gate thereof. This non-volatile SRAM device has a high density while exhibiting high-speed operation characteristics
작은 갭 형성 방법과 측면 FED의 제조에 적용
No full textThe present invention relates to a method of forming a small gap using CMP and a method for manufacturing a lateral FED. In the present invention, a small gap is determined by the thickness of an oxide film, and so uniform small gaps of about 100 that have been impossible to attain with the art of prior lithography can be formed with repeatability. Prior lateral field emission devices have the problem of repeatability in forming a gap for field emission because they are fabricated by means of a thermal stress method or an electrical stress method. But if the method of forming a small gap according to the present invention is used to fabricate a lateral FED, a FED can be made that has low voltage drive and high current drive characteristics and uniform field emission characteristics
실리콘 웨이퍼 오장착 방지 방법 및 이에 의해 제조된 실리콘 웨이퍼 구조
No full textThere are disclosed methods for the prevention of misfit dislocation in a silicon wafer and the silicon wafer structure manufactured thereby. A method according to an embodiment comprises the steps of: depositing a blanket silicon oxide or silicon nitride on silicon wafer in a chemical vapor deposition process; selectively etching the silicon oxide or silicon nitride, to form a silicon oxide or silicon nitride pattern which is of close shape; and injecting the silicon wafer with impurities at a high density with the CVD silicon oxide or silicon nitride pattern serving as a mask, so as to form an impurity-blocked region is formed under the CVD silicon oxide or silicon nitride through the action of the mask. The misfit dislocation is propagated mainly from the edge of wafer and an impurity-blocked region can prevent the propagation. The propagation energy is virtually based on the tensile stress attributable to the implantation of impurity. Formation of an impurity-blocked region in the wafer barricades the propagation of misfit dislocation because the propagation energy is not supplied in this region. Thus, the area of the silicon wafer enclosed by the impurity-blocked region has no misfit dislocation. By such conception, a silicon wafer free of misfit dislocation can be manufactured. Therefore, there are improved in electrical and mechanical properties in electrical devices, X-ray masks and micromachines as well as in surface roughness
High-performance three-dimensional on-chip inductors fabricated by novel micromachining technology for RF MMIC
No full text액정표시기용 디지털 구동회로
No full textA digital driving circuit for a liquid crystal display which sequentially receives and displays n-bit digital video information from a data bus on a bit basis. The digital driving circuit comprises a first data latch for sequentially storing the digital video information from the data bus on a bit basis, a shift register for synchronizing a latching operation of the first data latch with bit positions of the digital video information from the data bus, a second data latch for storing the digital video information stored in the first data latch temporarily before digital/analog conversion, and a digital/analog converter for sequentially converting the digital video information stored in the second data latch into analog signals on a bit basis. The digital driving circuit is able to sequentially process bit information of digital video information to reduce the number of data bus lines for loading the bit information thereon and the number of data catches arranged vertically to a column direction. Therefore, the driving circuit can be significantly reduced in its occupying width, thereby making it possible to make the display higher in density
SOI형 반도체 구조 제조 방법
No full textThe present invention relates to a method for manufacturing a semiconductor wafer having a SOI wafer-like structure which is prepared on a silicon substrate by electrochemical etching, and an active-driven liquid crystal display employing the semiconductor wafer as a pixel switching wafer. In accordance with the method for manufacturing the SOI- type semiconductor wafer, a wafer having a good electrical insulation property, low leakage current and small parasitic capacity, like a SOI wafer, can be prepared, by employing a silicon substrate which is cheaper than the SOI substrate
Extraction of elastic parameters of heavily boron-doped silicon layer by elimination of misfit dislocations
No full textNovel monolithic and multilevel integration of high-precision 3-D microfluidic components
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