26,883 research outputs found
The Application of Mucoadhesive Chitosan Nanoparticles in Nasal Drug Delivery
No full textMucosal delivery of antigens can induce both humoral and cellular immune responses. Particularly, the nasal cavity is a strongly inductive site for mucosal immunity among several administration routes, as it is generally the first point of contact for inhaled antigens. However, the delivery of antigens to the nasal cavity has some disadvantages such as rapid clearance and disposition of inhaled materials. For these reasons, remarkable efforts have been made to develop antigen delivery systems which suit the nasal route. The use of nanoparticles as delivery vehicles enables protection of the antigen from degradation and sustains the release of the loaded antigen, eventually resulting in improved vaccine and/or drug efficacy. Chitosan, which exhibits low toxicity, biodegradability, good cost performance, and strong mucoadhesive properties, is a useful material for nanoparticles. The present review provides an overview of the mucosal immune response induced by nanoparticles, recent advances in the use of nanoparticles, and nasal delivery systems with chitosan nanoparticles
Electrochemical and Spectroscopic Characterization of Self-Assembled Monolayers of 1,1'-Disubstituted Ferrocene Derivatives on Gold
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Control of the interfacial reaction in HfO2 on Si-passivated GaAs
No full textThe physical and electrical effects caused by interfacial reactions of HfO2 on Si-passivated GaAs were investigated by various methods. The results showed that the Si layer decreases the diffusion and formation of Ga-O. Moreover, post-nitridation in HfO2/Si/GaAs significantly reduced the formation of As-O and Ga-O. The depth profiling data showed that two separated layered structures were formed with HfO2 and a mixture of HfO2 and SiO2 after the annealing process. The crystalline structure and formation of Ga-O in the film affect the band offsets between GaAs and the high-k HfO2 dielectric. Moreover, the Si passivation effectively suppressed the interfacial defects caused by Ga-O diffusion during the annealing treatment. The nitridation cause As diffusion to oxygen vacancy of HfO2 result in the increase of the interfacial defect. (c) 2013 Elsevier B.V. All rights reserved.111sciescopu
High concentration of nitrogen doped into graphene using N-2 plasma with an aluminum oxide buffer layer
No full textWe performed plasma doping of nitrogen into single-layer graphene on SiO2. Using aluminum oxide as a buffer layer to reduce the plasma damage, up to 19.7% nitrogen was substitutionally doped into graphene. The nitrogen doping of graphene was confirmed by Raman and X-ray photoemission spectroscopy analyses. The n-doping property of the N-doped graphene was measured by Raman spectroscopy. Raman mapping was carried out to statistically confirm the Dirac cone shift of graphene resulting from the N-doping. The Dirac cone shift was directly measured by ultraviolet photoemission spectroscopy (UPS). The UPS result was consistent with the value calculated from the Raman G peak shift.1131sciescopu
Chemical Lithography of Nitro-Group Terminated SAMs on Silver via Visible Light Induced Surface Reaction
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Kinetically-Controlled Growth of Multimetallic Noble Metal Nanocrystals with Unprecedented Morphologies
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