3,517 research outputs found
Asymmetric gate induced drain leakage and body leakage in vertical MOSFETs with reduced parasitic capacitance
No full textVertical MOSFETs, unlike conventional planar MOSFETs, do not have identical structures at the source and drain, but have very different gate overlaps and geometric configurations. This paper investigates the effect of the asymmetric source and drain geometries of surround-gate vertical MOSFETs on the drain leakage currents in the OFF-state region of operation. Measurements of gate-induced drain leakage (GIDL) and body leakage are carried out as a function of temperature for transistors connected in the drain-on-top and drain-on-bottom configurations. Asymmetric leakage currents are seen when the source and drain terminals are interchanged, with the GIDL being higher in the drain-on-bottom configuration and the body leakage being higher in the drain-on-top configuration. Band-to-band tunneling is identified as the dominant leakage mechanism for both the GIDL and body leakage from electrical measurements at temperatures ranging from ?50 to 200?C. The asymmetric body leakage is explained by a difference in body doping concentration at the top and bottom drain–body junctions due to the use of a p-well ion implantation. The asymmetric GIDL is explained by the difference in gate oxide thickness on the vertical (110) pillar sidewalls and the horizontal (100) wafer surface
Comics as a Way of Doing, Encountering, and Making Religion
No full textWhat can be learned from the research presented in Culture, Comics, and Religion. Faith imagined? De Groot collects and systematizes the results and suggests paths for further research. He shows how comics are a way of doing, encountering, and making religion in liquid modernity, and argues that comics deserve more attention from the perspective of material religion, lived religion, and fiction-based religion
Self-aligned silicidation of surround gate vertical MOSFETs for low cost RF applications
No full textWe report for the first time a CMOS-compatible silicidation technology for surround-gate vertical MOSFETs. The technology uses a double spacer comprising a polysilicon spacer for the surround gate and a nitride spacer for silicidation and is successfully integrated with a Fillet Local OXidation (FILOX) process, which thereby delivers low overlap capacitance and high drive-current vertical devices. Silicided 80-nm vertical n-channel devices fabricated using 0.5-?m lithography are compared with nonsilicided devices. A source–drain (S/D) activation anneal of 30 s at 1100 ?C is shown to deliver a channel length of 80 nm, and the silicidation gives a 60% improvement in drive current in comparison with nonsilicided devices. The silicided devices exhibit a subthreshold slope (S) of 87 mV/dec and a drain-induced barrier lowering (DIBL) of 80 mV/V, compared with 86 mV/dec and 60 mV/V for nonsilicided devices. S-parameter measurements on the 80-nm vertical nMOS devices give an fT of 20 GHz, which is approximately two times higher than expected for comparable lateral MOSFETs fabricated using the same 0.5-?m lithography. Issues associated with silicidation down the pillar sidewall are investigated by reducing the activation anneal time to bring the silicided region closer to the p-n junction at the top of the pillar. In this situation, nonlinear transistor turn-on is observed in drain-on-top operation and dramatically degraded drive current in source-on-top operation. This behavior is interpreted using mixed-mode simulations, which show that a Schottky contact is formed around the perimeter of the pillar when the silicided contact penetrates too close to the top S/D junction down the side of the pillar
Hormonal effects of prohormones : novel approaches towards effect based screening in veterinary growth promoter control
No full textWithin the European Union the use of growth promoting agents in cattle fattening is prohibited according to Council Directive 96/22/EC. Interestingly, there is not a black list of substances, but 96/22/EC states that all substances having thyrostatic, estrogenic, androgenic or gestagenic activity are prohibited. Besides abuse of the “classical” synthetic steroids there is a tendency towards misuse of natural steroids and prohormones. Prohormones are compounds that exhibit limited or no hormonal activity but are direct precursors of bioactive hormones and are intended to be converted to full active hormones via enzymatic processes in the body. However, knowledge about metabolism, the mode of action and excretion profiles in cattle is often unclear, and methods to detect abuse of prohormones in livestock production are lacking. Therefore, the aim of this thesis was to get insight into the hormonal action of prohormones and to develop novel in vitro and in vivo screening methods allowing effective surveillance on the illegal use of prohormones in livestock production. Hereby the emphasis was on developing effect based approaches to better meet Council Directive 96/22/EC. The bioactivity of a wide variety of supplements which contained prohormones were tested using a yeast androgen bioassay. For supplements containing solely prohormones the value of this bioactivity based screening appeared to be limited as they require metabolism to become active. Therefore, screening methods for animal feed, supplements and preparations were set-up by using the same yeast androgen bioassay in combination with bovine liver models as well as enzymatic and chemical deconjugation procedures to mimic in vivo metabolic bioactivation. The use of either bovine liver S9, liver slices, pure enzymes or alkaline hydrolysis showed that prohormones could be activated, resulting in a significant increase in bioactivity as determined by the androgen yeast bioassay. For the detection of prohormone abuse at the farm and/or slaughterhouse the usefulness of ‘omics’ based profiling techniques was investigated. Within this scope a comprehensive metabolomics based screening strategy for steroid urine profiling was developed. Comparison of urinary profiles revealed large differences between the profiles of controls and dehydroepiandrosterone (DHEA) as well as pregnenolone treated animals. Moreover this steroid urine profiling approach allowed identification of biomarkers for treatment by specific prohormones. This resulted in respectively 7 and 12 specific mass peak loadings which could potentially be used as biomarkers for pregnenolone and DHEA treatment. In addition, the feasibility of a liver gene expression profiling approach was investigated to monitor the effects of DHEA treatment at the transciptome level. It was shown that identification and application of genomic biomarkers for screening of DHEA abuse in cattle is substantially hampered by biological variation. On the other hand, it was demonstrated that comparison of pre-defined gene sets versus the whole genome expression profile of an animal allows to distinguish DHEA treatment effects from variations in gene expression due to inherent biological variation. Altogether the results of this thesis increase the knowledge about the metabolism and bioactivation of prohormones in vitro as well as in vivo. Based on this knowledge, a panel of new effect based concepts and screening methods was developed that complement and improve the current testing programs. These new concepts will facilitate better implementation of the European ban on growth promoters in livestock production as described in Council Directive 96/22/EC. <br/
Raphaëlle de Groot : En exercice
Get PDF"This publication was produced by the Galerie de l’UQAM as part of an exhibition which took place from February 24 to April 1, 2006. The essay by Louise Déry presents the work site of Raphaëlle de Groot, who extended her original inquiry into the figure and roles of the artist by literally “exercising” in front of the exhibition’s visitors. The author also describes a vast project at the Cerutti textile factory in Biella, Italy, carried out by the artist during a residency at the Pistoletto Foundation in Biella. Yann Pocreau contributes an exercise in temporal writing modelled on the work of the artist, whose own texts, also presented here, are an essential complement to this volume." -- Publisher's websit
High quality Schottky contacts for limiting leakage currents in Ge-based Schottky barrier MOSFETs
Get PDFSchottky barrier (SB) Ge channel MOSFETs suffer from high drain-body leakage at the required elevated substrate doping concentrations to suppress source-drain leakage. Here we show that electrodeposited Ni-Ge and NiGe/Ge Schottky diodes on highly doped Ge show low off current, which might make them suitable for SB p-MOSFETs. The Schottky diodes showed rectification of up to 5 orders in magnitude. At low forward biases the overlap of the forward current density curves for the as deposited Ni/n-Ge and NiGe/n-Ge Schottky diodes indicates Fermi-level pinning in the Ge band gap. The SB height for electrons remains virtually constant at 0.52 eV (indicating a hole barrier height of 0.14 eV) under various annealing temperatures. The series resistance decreases with increasing annealing temperature in agreement with four point probe measurements indicating the lower specific resistance of NiGe as compared to Ni, which is crucial for high drive current in SB p-MOSFETs. We show by numerical simulation that by incorporating such high quality Schottky diodes in the source/drain of a Ge channel PMOS, highly doped substrate could be used to minimize the subthreshold source to drain leakage current
De Omgevingswet als groot ICT-project
No full textBinnen de planologie is veel onderzoek gedaan naar grote stedelijke projecten. De bij besluitvorming voorgestelde kosten en baten van zulke projecten zijn notoir onbetrouwbaar gebleken. Grote projecten kosten meestal meer dan geraamd, de realisatie duurt langer en de maatschappelijke baten vallen vaak tegen. Ook de Omgevingswet en het bijbehorende digitale stelsel kan worden beschouwd als een groot ICT-project. Niets wijst erop dat de Omgevingswet een van de schaarse positieve uitzonderingen zal vormen op de gangbare praktijk van grote projecten.Accepted Author ManuscriptOLD Geo-information and Land Developmen
Potted history
No full textThe Jordan Valley was once populated by a people, now almost forgotten by historians, with whom the pharaoh of Egypt sought favour. That is the conclusion reached by Niels Groot, the first researcher to take a PhD at the Delft-Leiden Centre for Archaeology, Art History and Science
Reduction of Parasitic Capacitance in Vertical MOSFETs by Spacer Local Oxidation
No full textApplication of double gate or surround-gate vertical metal oxide semiconductor field effect transistors (MOSFETs) is hindered by the parasitic overlap capacitance associated with their oayout, which is considerably larger than for a lateral MOSFET on the same technology node. A simple self-aligned procfess has been developed to reduce the parasitic overlap capacitance in MOSFETs using nitride spacers on the sidewalls of the trench or pillar and a local oxidation. This will result in an oxide layer on all exposed planar surfaces, but no oxide layer on the protected vertical channel area of the pillar. The encroachment of the oxide on the side of the pillar is studied by transmission electron microscopy (TEM)which is used to calibrate the nitride viscosity in the process simulations. Surround gate vertical transistors incorporating the spacer oxidation have been fabricated, and these transistors show the integrity of the process and excellent subthreshold slope and drive current. The reduction in intrinsic capacitance is calculated to be a factor of three. Pillar capacitors with a more advanced process have been fabricated and the total measured capacitance is reduced by a factor of five compared with structures without the spacer oxidation. Device simulations confirm the measured reduction in capacitance
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