203 research outputs found
H. Camon, La bataille napoléonienne, Paris, 1899
No full textT. N. H. Camon, La bataille napoléonienne, Paris, 1899. In: Revue d'histoire moderne et contemporaine, tome 1 N°3,1899. pp. 296-297
Simulation of silicon etching with KOH
No full textAnisotropic chemical etching of monocrystalline silicon in KOH aqueous solution is investigated. The atomic scale model proposed is based on the influence of the OH group on chemical bonds. Etch rate and activation energies are calculated and extended to the complete etch rate polar diagram and compared to available experimental data. Finally, an analytical description of etch rate ratios is proposed
Atomic scale simulation of silicon etched in aqueous KOH solution
No full textIn this paper we present the theoretical bases of an atomic scale model and the Monte Carlo implementation. We present results for <hk0> oriented surfaces like etching rates, and more detailed results for low-index surfaces such as <100> and <111>. For these two directions we present results concerning the surface morphology and the time evolution of the roughness
Monte Carlo Simulation of wet etching of silicon: Investigation of (111) surface properties
No full textThe etching rate of the Si<111> surface family is of prime importance for micro-fabrication. However, the experimental values of the corresponding etch rate are often scattered and the etching mechanism of <111> surfaces remains unclear. In this paper the Monte Carlo simulation results obtained from etching of Si(111) small size substrates are presented. Simulations were carried out to simulate the behaviour of the <111> surface in contact with strong base aqueous solutions (R - OH). Simulation shows that when etching a small substrate (200 A X 200 A), the etch depth against time curve shows a constant part and a linear part. The former is related to the magnitude of Monte Carlo time steps while the latter corresponds to the evacuation of one sublayer. However, the substrate size fails to impact the etching mechanism which remains unchanged even for an infinite size. The same remark applies to roughness which exhibits a series of alternative peaks
New trends in atomic scale simulation of wet chemical etching of silicon with KOH
No full textA new atomic scale model has been developed to simulate anisotropic etching of silicon in KOH solutions. This model is based on the influence of the number of hydroxide groups attached to atoms. Etch rates and macroscopic activation energies have been calculated and compared with experimental data. Microscopic surface roughness has been investigated for (110) and (111) surfaces
Dielectric elastomer micro actuator made in micromachining technology: finite element modeling and deformation measurement
No full textCeramic siloxane composite as a future elastomer dielectric for micro-actuator realization
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