118,553 research outputs found

    R. G. De Groot, Staatsangehörigkeitsrecht im Wandel

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    R. G. De Groot, Staatsangehörigkeitsrecht im Wandel. In: Revue internationale de droit comparé. Vol. 41 N°4, Octobre-décembre 1989. p. 1069

    Survey on Rules on Loss of Nationality in International Treaties and Case Law. CEPS Paper in Liberty and Security in Europe No. 57, 30 August 2013

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    This paper offers a picture of the obligations existing under international and European law in respect of the loss of nationality. It describes international instruments including obligations in this field with direct relevancy for the loss of nationality of Member States of the European Union, but also obligations regarding loss of nationality in regional non-European treaties. Attention is given to two important judicial decisions of the European Court of Justice (Janko Rottmann) and the European Court of Human Rights (Genovese v Malta) regarding nationality. Special attention is devoted to Article 15 of the Universal Declaration of Human Rights, which forbids the arbitrary deprivation of nationality. A survey is provided of possible sub-principles that can be derived from this rule. Finally, some observations are made on the burden of proof in cases of loss of nationality

    The AM Canum Venaticorum binary SDSS J173047.59+554518.5

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    The AM Canum Venaticorum (AM CVn) binaries are a rare group of hydrogen-deficient, ultrashort period, mass-transferring white dwarf binaries and are possible progenitors of Type Ia supernovae. We present time-resolved spectroscopy of the recently discovered AM CVn binary SDSS J173047.59+554518.5. The average spectrum shows strong double-peaked helium emission lines, as well as a variety of metal lines, including neon; this is the second detection of neon in an AM CVn binary, after the much brighter system GP Com. We detect no calcium in the accretion disc, a puzzling feature that has been noted in many of the longer period AM CVn binaries. We measure an orbital period, from the radial velocities of the emission lines, of 35.2 ± 0.2 min, confirming the ultracompact binary nature of the system. The emission lines seen in SDSS J1730 are very narrow, although double-peaked, implying a low-inclination, face-on accretion disc; using the measured velocities of the line peaks, we estimate i ≤ 11°. This low inclination makes SDSS J1730 an excellent system for the identification of emission lines

    GROOT design and components.

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    Generating Rhizodynamic Observations Over Time (GROOT) robot design and components. A) Photointerrupter sensors and their locations (marked with blue dots) on the GROOT system. B) NEMA 17 stepper motor. C) Openbuilds belt driven linear actuator showing NEMA 17 motor attachment with belt over the motor shaft. D) GROOT system built at Georgia Tech showing the vertical and horizontal belt driven linear actuator locations. E) Magenta 7 polycarbonate containers used for imaging. F) FLIR Flea3 Camera with GPIO cord attached to use for hardware trigger functionality. G) Dual camera setup used for GROOT with angled camera positioned above forward-facing camera.</p

    Asymmetric gate induced drain leakage and body leakage in vertical MOSFETs with reduced parasitic capacitance

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    Vertical MOSFETs, unlike conventional planar MOSFETs, do not have identical structures at the source and drain, but have very different gate overlaps and geometric configurations. This paper investigates the effect of the asymmetric source and drain geometries of surround-gate vertical MOSFETs on the drain leakage currents in the OFF-state region of operation. Measurements of gate-induced drain leakage (GIDL) and body leakage are carried out as a function of temperature for transistors connected in the drain-on-top and drain-on-bottom configurations. Asymmetric leakage currents are seen when the source and drain terminals are interchanged, with the GIDL being higher in the drain-on-bottom configuration and the body leakage being higher in the drain-on-top configuration. Band-to-band tunneling is identified as the dominant leakage mechanism for both the GIDL and body leakage from electrical measurements at temperatures ranging from ?50 to 200?C. The asymmetric body leakage is explained by a difference in body doping concentration at the top and bottom drain–body junctions due to the use of a p-well ion implantation. The asymmetric GIDL is explained by the difference in gate oxide thickness on the vertical (110) pillar sidewalls and the horizontal (100) wafer surface

    Soft power in the Asia-Pacific post 9-11: The cases of Japan, China and India

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