31,766 research outputs found
The AM Canum Venaticorum binary SDSS J173047.59+554518.5
No full textThe AM Canum Venaticorum (AM CVn) binaries are a rare group of hydrogen-deficient, ultrashort period, mass-transferring white dwarf binaries and are possible progenitors of Type Ia supernovae. We present time-resolved spectroscopy of the recently discovered AM CVn binary SDSS J173047.59+554518.5. The average spectrum shows strong double-peaked helium emission lines, as well as a variety of metal lines, including neon; this is the second detection of neon in an AM CVn binary, after the much brighter system GP Com. We detect no calcium in the accretion disc, a puzzling feature that has been noted in many of the longer period AM CVn binaries. We measure an orbital period, from the radial velocities of the emission lines, of 35.2 ± 0.2 min, confirming the ultracompact binary nature of the system. The emission lines seen in SDSS J1730 are very narrow, although double-peaked, implying a low-inclination, face-on accretion disc; using the measured velocities of the line peaks, we estimate i ≤ 11°. This low inclination makes SDSS J1730 an excellent system for the identification of emission lines
Self-aligned silicidation of surround gate vertical MOSFETs for low cost RF applications
No full textWe report for the first time a CMOS-compatible silicidation technology for surround-gate vertical MOSFETs. The technology uses a double spacer comprising a polysilicon spacer for the surround gate and a nitride spacer for silicidation and is successfully integrated with a Fillet Local OXidation (FILOX) process, which thereby delivers low overlap capacitance and high drive-current vertical devices. Silicided 80-nm vertical n-channel devices fabricated using 0.5-?m lithography are compared with nonsilicided devices. A source–drain (S/D) activation anneal of 30 s at 1100 ?C is shown to deliver a channel length of 80 nm, and the silicidation gives a 60% improvement in drive current in comparison with nonsilicided devices. The silicided devices exhibit a subthreshold slope (S) of 87 mV/dec and a drain-induced barrier lowering (DIBL) of 80 mV/V, compared with 86 mV/dec and 60 mV/V for nonsilicided devices. S-parameter measurements on the 80-nm vertical nMOS devices give an fT of 20 GHz, which is approximately two times higher than expected for comparable lateral MOSFETs fabricated using the same 0.5-?m lithography. Issues associated with silicidation down the pillar sidewall are investigated by reducing the activation anneal time to bring the silicided region closer to the p-n junction at the top of the pillar. In this situation, nonlinear transistor turn-on is observed in drain-on-top operation and dramatically degraded drive current in source-on-top operation. This behavior is interpreted using mixed-mode simulations, which show that a Schottky contact is formed around the perimeter of the pillar when the silicided contact penetrates too close to the top S/D junction down the side of the pillar
Asymmetric gate induced drain leakage and body leakage in vertical MOSFETs with reduced parasitic capacitance
No full textVertical MOSFETs, unlike conventional planar MOSFETs, do not have identical structures at the source and drain, but have very different gate overlaps and geometric configurations. This paper investigates the effect of the asymmetric source and drain geometries of surround-gate vertical MOSFETs on the drain leakage currents in the OFF-state region of operation. Measurements of gate-induced drain leakage (GIDL) and body leakage are carried out as a function of temperature for transistors connected in the drain-on-top and drain-on-bottom configurations. Asymmetric leakage currents are seen when the source and drain terminals are interchanged, with the GIDL being higher in the drain-on-bottom configuration and the body leakage being higher in the drain-on-top configuration. Band-to-band tunneling is identified as the dominant leakage mechanism for both the GIDL and body leakage from electrical measurements at temperatures ranging from ?50 to 200?C. The asymmetric body leakage is explained by a difference in body doping concentration at the top and bottom drain–body junctions due to the use of a p-well ion implantation. The asymmetric GIDL is explained by the difference in gate oxide thickness on the vertical (110) pillar sidewalls and the horizontal (100) wafer surface
Observation of two-orbital spin-exchange interactions with ultracold SU(N)-symmetric fermions
No full textSpin-exchanging interactions govern the properties of strongly correlated electron systems such as many magnetic materials. When orbital degrees of freedom are present, spin exchange between different orbitals often dominates, leading to the Kondo effect, heavy fermion behaviour or magnetic ordering. Ultracold ytterbium or alkaline-earth ensembles have attracted much recent interest as model systems for these effects, with two (meta-) stable electronic configurations representing independent orbitals. We report the observation of spin-exchanging contact interactions in a two-orbital SU(N)-symmetric quantum gas realized with fermionic Yb-173. We find strong inter-orbital spin exchange by spectroscopic characterization of all interaction channels and demonstrate SU(N = 6) symmetry within our measurement precision. The spin-exchange process is also directly observed through the dynamic equilibration of spin imbalances between ensembles in separate orbitals. The realization of an SU(N)-symmetric two-orbital Hubbard Hamiltonian opens the route to quantum simulations with extended symmetries and with orbital magnetic interactions, such as the Kondo lattice model
High quality Schottky contacts for limiting leakage currents in Ge-based Schottky barrier MOSFETs
No full textSchottky barrier (SB) Ge channel MOSFETs suffer from high drain-body leakage at the required elevated substrate doping concentrations to suppress source-drain leakage. Here we show that electrodeposited Ni-Ge and NiGe/Ge Schottky diodes on highly doped Ge show low off current, which might make them suitable for SB p-MOSFETs. The Schottky diodes showed rectification of up to 5 orders in magnitude. At low forward biases the overlap of the forward current density curves for the as deposited Ni/n-Ge and NiGe/n-Ge Schottky diodes indicates Fermi-level pinning in the Ge band gap. The SB height for electrons remains virtually constant at 0.52 eV (indicating a hole barrier height of 0.14 eV) under various annealing temperatures. The series resistance decreases with increasing annealing temperature in agreement with four point probe measurements indicating the lower specific resistance of NiGe as compared to Ni, which is crucial for high drive current in SB p-MOSFETs. We show by numerical simulation that by incorporating such high quality Schottky diodes in the source/drain of a Ge channel PMOS, highly doped substrate could be used to minimize the subthreshold source to drain leakage current
NIDDK international conference report on diabetes and depression: current understanding and future directions
No full textComorbid diabetes and depression are a major clinical challenge as the outcomes of each condition are worsened by the other. This article is based on the presentations and discussions during an international meeting on diabetes and depression convened by the National Institute of Diabetes and Digestive and Kidney Diseases (NIDDK) in collaboration with the National Institute of Mental Health and the Dialogue on Diabetes and Depression. While the psychological burden of diabetes may contribute to depression in some cases, this explanation does not sufficiently explain the relationship between these two conditions. Shared biological and behavioral mechanisms, such as hypothalamic-pituitary-adrenal axis activation, inflammation, autonomic dysfunction, sleep disturbance, inactive lifestyle, poor dietary habits, and environmental and cultural risk factors, are important to consider in understanding the link between depression and diabetes. Both individual psychological and pharmacological depression treatments are effective in people with diabetes, but the current range of treatment options is limited and has shown mixed effects on glycemic outcomes. More research is needed to understand what factors contribute to individual differences in vulnerability, treatment response, and resilience to depression and metabolic disorders across the life course and how best to provide care for people with comorbid diabetes and depression in different health care settings. Training programs are needed to create a cross-disciplinary workforce that can work in different models of care for comorbid condition
Mean or green? Values, morality and environmental significant behavior.
No full textIn most cases, pro-environmental behavior does not maximize individual interests, but mainly benefits other people or the environment. We propose that although acting on the basis of egoistic considerations may result in pro-environmental behavior, altruistic and biospheric considerations provide the most stable basis for pro-environmental behavior. We present two strategies to promote stable pro-environmental behavior. The first way is increasing the saliency of altruistic and biospheric values in specific situations, thereby reducing the relative strength of egoistic values. The second way is making the often “anti-environmental” egoistic values compatible with “pro-environmental” altruistic and biospheric values. We explain these options and translate it to possible interventions, policy implications, and follow-up research to promote “green” behavior
L'opération de la pierre de tête, ou mieux : du caillou : I. M. De Groot et De Moulin, L'opération du caillou, in Médecine et Hygiène (Suisse), 1974
No full textJulien Pierre. L'opération de la pierre de tête, ou mieux : du caillou : I. M. De Groot et De Moulin, L'opération du caillou, in Médecine et Hygiène (Suisse), 1974. In: Revue d'histoire de la pharmacie, 63ᵉ année, n°227, 1975. p. 615
Applying the ATN scheme in a memory clinic population: The ABIDE project
No full textObjectiveTo apply the ATN scheme to memory clinic patients, to assess whether it discriminates patient populations with specific features.MethodsWe included 305 memory clinic patients (33% subjective cognitive decline [SCD]: 60 ± 9 years, 61% M; 19% mild cognitive impairment [MCI]: 68 ± 9 years, 68% M; 48% dementia: 66 ± 10 years, 58% M) classified for positivity (±) of amyloid (A) ([18F]Florbetaben PET), tau (T) (CSF p-tau), and neurodegeneration (N) (medial temporal lobe atrophy). We assessed ATN profiles' demographic, clinical, and cognitive features at baseline, and cognitive decline over time.ResultsThe proportion of A+T+N+ patients increased with syndrome severity (from 1% in SCD to 14% in MCI and 35% in dementia), while the opposite was true for A-T-N- (from 48% to 19% and 6%). Compared to A-T-N-, patients with the Alzheimer disease profiles (A+T+N- and A+T+N+) were older (both p < 0.05) and had a higher prevalence of APOE ε4 (both p < 0.05) and lower Mini-Mental State Examination (MMSE) (both p < 0.05), memory (both p < 0.05), and visuospatial abilities (both p < 0.05) at baseline. Non-Alzheimer profiles A-T-N+ and A-T+N+ showed more severe white matter hyperintensities (both p < 0.05) and worse language performance (both p < 0.05) than A-T-N-. A linear mixed model showed faster decline on MMSE over time in A+T+N- and A+T+N+ (p = 0.059 and p < 0.001 vs A-T-N-), attributable mainly to patients without dementia.ConclusionsThe ATN scheme identified different biomarker profiles with overlapping baseline features and patterns of cognitive decline. The large number of profiles, which may have different implications in patients with vs without dementia, poses a challenge to the application of the ATN scheme
Magnetic anisotropy in the cubic Laves REFe2 intermetallic compounds
No full textIn the past, the Callen–Callen (1965 Phys. Rev. 139 A455–71; 1966 J. Phys. Chem. Solids 27 1271–85) model has been highly successful in explaining the origin and temperature dependence of the magneto-crystalline anisotropy in many magnetic compounds. Yet, despite their high ordering temperatures of ~650 K, the Callen–Callen model has proved insufficient for the REFe2 compounds. In this paper, we show that it is possible to replicate the values of the phenomenological parameters K1, K2, and K3 given by Atzmony and Dariel (1976 Phys. Rev. B 13 4006–14), by extending the Callen–Callen model to second order in HCF. In particular, explanations are provided for (i) the unexpected changes in sign of K1 and K2 in HoFe2 and DyFe2, respectively, and (ii) the origin and behaviour of the K3 term. In addition, it is demonstrated that higher order terms are required, and that K4 exceeds K3 at low temperatures. Revised estimates of K1, K2, K3, K4, and K5 are given. Finally, an alternative 'multipolar' approach to the problem of magnetic anisotropy is also provided. It is shown that the latter confers significant advantages over the older phenomenological method. In particular, all the multipolar coefficients (\tilde {K}_N , N = 4, 6, 8, 10, 12) decrease monotonically with increasing temperature, with \tilde {K}_N decreasing faster than \tilde {K}_{N-2} etc. These observations are in accord with expectations based on the original Callen–Callen model
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