18,734 research outputs found
Smaller Ge Quantum Dots Obtained by ArF Excimer Laser Annealing
No full textGe self-assembled quantum dots (SAQDs) are grown with a self-assembled UHV/CVD epitaxy system. Then,the as-grown Ge quantum dots are annealed by ArF excimer laser. In the ultra-shot laser pulse duration,～20ns, bulk diffusion is forbidden, and only surface diffusion occurs, resulting in a laser induced quantum dot (LIQD). The diameter of the LIQD is 20～25nm which is much smaller than the as-grown dot and the LIQD has a higher density of about 6 × 10~(10)cm~(-2). The surface morphology evolution is investigated by AFM
Growth of SiGe by D-UHV/CVD at Low Temperature
No full textThe temperature is a key factor for the quality of the SiGe alloy grown by D-UHV/CVD. In conventional conditions,the lowest temperature for SiGe growth is about 550℃. Generally, the pressure of the growth chamber is about 10~(-5) Pa when liquid nitrogen is introduced into the wall of the growth chamber with the flux of 6sccm of the disilane gas. We have succeeded in depositing SiGe films at much lower temperature using a novel method. It is about 10.2 Pa without liquid nitrogen, about 3 magnitudes higher than the traditional method,leading to much faster deposition rate. Without liquid nitrogen,the SiGe film and SiGe/Si superlattice are grown at 485℃. The DCXRD curves and TEM image show that the quality of the film is good. The experiments show that this method is efficient to deposit SiGe at low temperature
Dataset to support the article "High-resolution 𝜙-OFDR using phase unwrap and nonlinearity suppression"
No full textThis dataset is used for realizing high resolution of phase-sensitive Optical Frequency Domain Reflectometer. It is associated with the research paper:
Guo Z, Yan J, Han G, Yu Y, Greenwood D and Marco J (2023) "High-Resolution φ-OFDR Using Phase Unwrap and Nonlinearity Suppression". Journal of Lightwave Technology, 41 (9), 2885-2891. (https://doi.org/10.1109/JLT.2023.3236775).
The data is presented as an excel file:
High_resolution_OFDR_using_phase_unwrap_and_nonlinearity_suppression.xlsx
This work was funded by High Value Manufacturing Catapult and the Engineer and Physical Sciences Research Council - EPSRC EP/V000624/1. The author Gaoce Han would like to acknowledge the China Scholarship Council for sponsoring.</span
Han Suyin (Chinese author) speaking at Dallas Brookes Hall.
No full textThis record was harvested from a previous catalogue system and will be withdrawn in 2025. Information in this record may be superseded or incomplete. Visit this record in UMA's new catalogue at: https://archives.library.unimelb.edu.au/nodes/view/276390Han Suyin (Chinese author) speaking at Dallas Brookes Hall.200056
Item: [1999.0081.00439] "Han Suyin (Chinese author) speaking at Dallas Brookes Hall.
A Study on the mathematics textbooks in the era of the Great Han Empire
No full text이 글은 갑오경장(1894)과 경술 국치(1910) 사이에 간행된 산학(수학) 교재류의 목록을 확인하고, 각 텍스트의 출판과 관련된 사항, 소장처, 이본 등의 서지적 정보와 함께 이 시기 산학 교재류의 국어사 자료로서의 의의를 언어 사용 상의 측면에 초점을 두어 정리하는 것을 목적으로 한다. 이는 현대 한국어 태동기의 분과 학문의 도입 양상에 대한 연구의 일환인 한편, 학술 용어의 번역과 정착을 중심으로 이 시기의 한국어의 어휘 확장 양상을 확인하는 데에 필요한 기초 자료를 정리하는 작업의 한 부분이다. 본 연구에 앞선 산학(수학) 교재류에 대한 연구로는 산학 교재류의 서지 사항에 대해 기술한 강윤호(1973:187-199), 김봉희(1992:247-253), 한길준(2009), 오채환 외(2010) 등이 있고, 한국 수학사를 기술하면서 교재류를 함께 다룬 것으로 김용운·김용국(1982)와 이상구(2013)이 있다.This paper aims to make a whole list of the mathematics textbooks in the era of the Great Han Empire and summerize bibliographical data and linguistic characteristics in view of Korean history. In chapter 1, the author reviewed former studies which deals with the mathematics textbooks in the era of the Great Han Empire. In chapter 2, the author summerized bibliographical data of 45 volumes of 32 kinds textbooks. In chapter 3, the author described linguistic characteristics of the textbooks, especially focusing on writing systems, the use of Arabic numerals, horizontal writing, and presence of index or glossary
Also By The Same Author: AKTiveAuthor, a Citation Graph Approach to Name Disambiguation
No full textThe desire for definitive data and the semantic web drive for inference over heterogeneous data sources requires co-reference resolution to be performed on those data. In particular, name disambiguation is required to allow accurate publication lists, citation counts and impact measures to be determined. This paper describes a graph-based approach to author disambiguation on large-scale citation networks. Using self-citation, co-authorship and document source analyses, AKTiveAuthor clusters papers, achieving precision of 0.997 and recall of 0.818 over a test group of eight surname clusters
Dataset to support the article "High Sensing Accuracy Realisation with Millimetre/sub-Millimetre Resolution in Optical Frequency Domain Reflectometer"
No full textThis dataset is used for realizing high sensing accuracy and sub-millimetre resolution of Optical Frequency Domain Reflectometer. It is associated with the research paper "High Sensing Accuracy Realisation with Millimetre sub-Millimetre Resolution in Optical Frequency Domain Reflectometer" in Journal: Journal of Lightwave Technology.
This work was funded by High Value Manufacturing Catapult, grant reference, 160080 CORE (WMG), titled ‘Smart Sensing for Future Batteries’ and the EPSRC (Engineering and Physical Sciences Research Council), grant reference EP/R004927/1, titled ‘Prosperity Partnership’. The author Gaoce Han would like to acknowledge the China Scholarship Council for sponsoring.</span
An n-type SiGe/Ge QC structure utilizing the deep Ge quantum well for electron at the Gamma point
No full textIn this paper, an n-type Si1-xGex/Ge (x >= 0.85) quantum cascade (QC) structure utilizing a deep Ge quantum well for electrons at the Gamma point is proposed. Based on linear interpolation, a conduction band offset at the Gamma point in a Si1-xGex/Ge ( x >= 0.85) heterostructure is presented, which is suitable for designing a QC laser. This approach has the advantages of a large conduction band offset at the Gamma point, a low lattice mismatch between the Si1-xGex/Ge ( x >= 0.85) active layers and the Si1-yGey ( y > x) virtual substrate, a small electron effective mass in the Gamma band, simple conduction energy band structures and a simple phonon scattering mechanism in the Ge quantum well. The theory predicts that if high-energy electrons are continuously injected into the Gamma band, a quasi-equilibrium distribution of electrons between the Gamma and L bands can be reached and held, i.e., electrons with a certain density will be kept in the Gamma band. This result is supported by the intervalley scattering experiments. In n-type Si1-xGex/Ge ( x >= 0.85) QC structures, population inversion between the laser's upper and lower levels is demonstrated
Strained Germanium-Tin (GeSn) P-Channel Metal-Oxide-Semiconductor Field-Effect Transistors Featuring High Effective Hole Mobility
No full textCorvèe under Han
No full textThe author distinguishes between the corvee systems of Ch'in and Han. In spite of the fact that the corvee system underwent a marked change in 167 B. C. in the reign of Emperor Wen of Former Han, the fact has been hitherto almost entirely overlooked. The author tries to reconstruct the Ch'in corvee system from various sources. In the sense that these two ancient empires were despotic in their constitution there was no essential difference between their system of government, but Han succeeded in melting feudalistic residues of the Chan-kuo period into her own system, while Ch'in failed in doing so due to the short period of her rule. Moreover, Ch'in failed in taking local differences into consideration in establishing her institutions. In the author's view the reign of Emperor Wen is significant in the sense that it represents renovation of the feudalistic taxation system and of the uniform and artificial system of local administration
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