8,894 research outputs found

    An (3.82^k) Time FPT Algorithm for Convex Flip Distance

    No full text
    Let P be a convex polygon in the plane, and let T be a triangulation of P. An edge e in T is called a diagonal if it is shared by two triangles in T. A flip of a diagonal e is the operation of removing e and adding the opposite diagonal of the resulting quadrilateral to obtain a new triangulation of P from T. The flip distance between two triangulations of P is the minimum number of flips needed to transform one triangulation into the other. The Convex Flip Distance problem asks if the flip distance between two given triangulations of P is at most k, for some given parameter k ∈ ℕ. We present an FPT algorithm for the Convex Flip Distance problem that runs in time (3.82^k) and uses polynomial space, where k is the number of flips. This algorithm significantly improves the previous best FPT algorithms for the problem

    Fabrication and characterisation of novel Ge MOSFETs

    No full text
    As high-k dielectrics are introduced into commercial Si CMOS (Complimentary Metal Oxide Semiconductor) microelectronics, the 40 year channel/dielectric partnership of Si/SiO2 is ended and the door opened for silicon to be replaced as the active channel material in MOSFETs (Metal Oxide Semiconductor Field Effect Transistor). Germanium is a good candidate as it has higher bulk carrier mobilities than silicon. In addition, Si and Ge form a thermodynamically stable SiGe alloy of any composition, allowing Ge to be implemented as a thin layer on the surface of a standard Si substrate. This thesis is a practical investigation on several aspects of Ge CMOS technology. High-k dielectric Ge p-MOSFETs are electrically characterised. A large variation in interface state densities is demonstrated to be responsible for a threshold voltage shift and this is proportional to reciprocal peak mobility due to the Coulomb scattering of carriers by charged states. A theoretical mobility is fitted to that measured at 4.2 K and confirms that interface states are the main source of interface charged impurities. The model demonstrates a reduction in the interface charged impurity density in p-MOSFETs that underwent a PMA (Post Metallisation Anneal) in hydrogen atmosphere and that the anneal also reduces the RMS (Root Mean Square) dielectric/semiconductor interface roughness, from an average of 0.60 nm to 0.48 nm. High-k strained Ge p-MOSFETs are electrically characterised and have peak mobilities at 300 K (470 cm2 V-1 s-1) and 4.2 K (1780 cm2 V-1 s-1) far in excess of those measured for the unstrained Ge p-MOSFETs (285 cm2 V-1 s-1,785 cm2 V-1 s-1 respectively). Strained Ge n-MOSFETs perform significantly worse than standard Si P, - MOSFETs primarily due to a high source/drain resistance. A 10 nm thick SiGe-01 (On Insulator) layer with a Ge composition of 58% is obtained from a 55 nm Si0_88Ge1o2. initial layer on 100 nm Si-Ol substrate via the germanium condensation technique. For the first time, germanium is demonstrated to diffuse through the BOX (Buried OXide) during Ge-condensation and into the underlying Si substrate. An order of magnitude increase in the calculated ITOX (Internal Thermal OXidation) rate of the BOX in the final stages of Ge-condensation is hypothesised to be responsible for stopping this diffusion

    Chuan shang ge wu biao yan

    No full text
    1. 山峽風景 -- 2. 過運河 -- 3. 沿岸風景 -- 4. 春光美 : 女聲演唱 -- 5. 跳舞 -- 6. 流行歌表演.86. VIII, 山峽 -- 86. VIII, 船上歌舞表演.Detailed contents in vernacular field only.86. VIII, Shan xia -- 86. VIII, Chuan shang ge wu biao yan.Second title supplied by cataloguer.Live recording.Electronic reproduction from Rulan Chao Pian V8 collection.Performers, unknown.Sung and spoken in Chinese

    Xi yuan lu xiang yi: si juan, juan shou. v.1

    No full text
    許槤編校.綫裝.框18.9x13.8公分, 分上下欄, 上欄註解18行14字, 下欄原文9行14字. 白口, 左右雙邊, 單黑魚尾. 版心上鐫題名, 中鐫卷次, 小題, 下鐫葉次. 眉端刻評.書名頁署"洗冤錄詳義, 光緖丙子秋九月泉唐葛氏嘯園開雕, 上虞徐三庚署".前有光緖二年[1876]葛元煦序, 言重刻此書事.卷四末刻"嘯園藏板", "上海新北門內謝潤卿鐫字"With: 洗冤錄摭遺 : 二卷 / 葛元煦.鈐"承業堂藏書印", "長□彭氏", "莊兆祥印"Xian zhuang.Kuang 18.9 x 13.8 gong fen, fen shang xia lan, shang lan zhu jie 18 hang 14 zi, xia lan yuan wen 9 hang 14 zi. Bai kou, zuo you shuang bian, dan hei yu wei. Ban xin shang juan ti ming, zhong juan juan ci, xiao ti, xia juan ye ci. Mei duan ke ping.Detailed notes in vernacular field only.Detailed notes in vernacular field only.Detailed notes in vernacular field only.Xu Lian bian jiao.With: Xi yuan lu zhi yi : er juan / Ge Yuanxu.Qian "Cheng ye tang cang shu yin", "Chang [...] Peng shi", "Zhuang Zhaoxiang yin

    A new genus and species of tribe Macrosiphini (Hemiptera, Aphididae) from northeast China

    No full text
    Stekolshchikov, Andrey V., Ge-Xia, Qiao (2008): A new genus and species of tribe Macrosiphini (Hemiptera, Aphididae) from northeast China. Zootaxa 1714: 37-40, DOI: 10.5281/zenodo.18097

    Brevisiphonaphis hirsutissima Stekolshchikov & Ge-Xia, 2008, sp. nov.

    No full text
    Brevisiphonaphis hirsutissima sp. nov. (Figs. 1–7, Tabl. 1) Type material. Holotype: apterous viviparous female, No. 8185 - 1 -(1-2), specimen No. 5 (lower specimen), northeast China, Liaoning Province, Jianchang, 11.VIII. 1985, Artemisia argyi H.Lév. & Vaniot, collected by Zhang Guangxue. Deposited in the Institute of Zoology, Chinese Academy of Sciences, Beijing. Paratypes: 7 apterous females on two slides, same data as for holotype. Deposited in the Institute of Zoology, Chinese Academy of Sciences, Beijing, China and in the Zoological Institute, Russian Academy of Science, St. Petersburg, Russia. Etymology. Specific name hirsutissima derived from the Latin word “ hirsutus ” (= shaggy) in a superlative degree. Description. Apterous viviparous female. Body 1.58–1.83 (1.73) times as long as its width. Color in life unknown. Cleared specimens with dark-brown frons, 4 th– 6 th antennal segments, 3 rd and 4 th rostral segments, apical third of femora, apices of tibia and tarsi; with brown head, 1 st– 3 rd antennal segments, coxae, cross-band on subgenital plate, anal plate and cauda; with light-brown band on abdominal tergite VIII, femora, tibia, subgenital plate and peritremes. Surface of head weakly wrinkled, of thorax and abdominal segments I–V smooth, on abdominal segments VI–VII with rows of small pointed spinules, which on tergite VIII partially fused and forming scales, of ventral side of thorax wrinkled, of ventral side of abdomen with rows of small spinules, sometimes forming cells. Head with epicranial coronal suture. Longest occipital and frontal hairs 86–101 (93) and 96–101 (99) μm long, 2.85–3.36 (3.16) and 3.00– 3.51 (3.34) times as long as articular diameter of 3 rd antennal segment, respectively. 1 st and 2 nd antennal segments weakly wrinkled, almost smooth, 3 rd antennal segment smooth, 4 th– 6 th segments with scales. 3 rd antennal segment with 6–13 (8.8) secondary rhinaria arranged more or less in a row on the middle part of the segment. Secondary rhinaria are rounded or oval, weakly projecting, with external diameter 1.0–8.0 times as long as high. Longest hair on 3 rd segment 86–99 (92) μm long, 2.69–3.51 (3.11) times as long as articular diameter of the segment. Rostrum reaching abdominal segments II–III. Ultimate rostral segment 2.32–2.75 (2.53) times as long as its basal width, with 8–10 (9.4) long accessory hairs. Ventral hair on hind trochanter 1.33–1.62 (1.47) times as long as basal diameter of hind femur; longest dorsal, ventral and dorso-apical hairs on hind femur 73–94 (89), 81–96 (91) and 51–68 (61) μm long, respectively; longest dorsal hair on hind tibia 83–91 (89) μm long, 2.00– 2.25 (2.12) times as long as the mid-diameter of the latter. Chaetotaxy of first tarsal segments 3, 3, 3 and only one specimen with 2 hairs on one hind tarsus. 2 nd segment of hind tarsus with scales, 5.33–5.83 (5.54) times as long as its maximum width and 0.81–1.02 (0.92) times as long as base of 6 th antennal segment. Abdominal segment III with 116–142 (126.7) spinal and marginal hairs, longest dorsal, marginal and ventral hairs on abdominal tergite III 94 –104 (99), 89–106 (99) and 96–109 (101) μm long, 3.08–3.73 (3.36), 3.04–3.69 (3.36) and 2.92–3.87 (3.42) times as long as articular diameter of 3 rd antennal segment, respectively. Siphunculi 0.55–0.84 (0.71) times as long as its basal width. Tergite VIII with 19–33 (26.4) hairs 109–114 (112) μm long, 3.61 –4.00 (3.84) times as long as articular diameter of 3 rd antennal segment. Subgenital plate oval, with 21– 29 (24.5) hairs on anterior half and 15–25 (20.5) hairs on posterior half and along the hind margin. Cauda with 10–17 (13.1) hairs. Measurements of holotype. Body— 1714 x 1026, antennae— 1935: III— 410 x 44, IV— 362, V— 344, VI— 177 + 430; hind femur— 611, hind tibia— 1005; siphunculus— 19 x 23; cauda— 175 x 185 (at base) x 159 (before base). Distribution. Only known from the type locality in Jianchang, Liaoning Province, northeast China. Biology. Host-plant is Artemisia argyi H.Lév. & Vaniot. The life cycle, the type of colony and the locality on the host plant are unknown.Published as part of Stekolshchikov, Andrey V. & Ge-Xia, Qiao, 2008, A new genus and species of tribe Macrosiphini (Hemiptera, Aphididae) from northeast China, pp. 37-40 in Zootaxa 1714 on pages 38-40, DOI: 10.5281/zenodo.18097

    Additions to the description of the genus Brevisiphonaphis (Hemiptera, Aphididae)

    No full text
    Stekolshchikov, Andrey V., Ge-Xia, Qiao (2008): Additions to the description of the genus Brevisiphonaphis (Hemiptera, Aphididae). Zootaxa 1746 (1): 68, DOI: 10.11646/zootaxa.1746.1.

    Species of the Poaceae-associated genus Bamboosiella (Thysanoptera, Phlaeothripidae) from China, with three new species

    No full text
    Dang, Li-Hong, Qiao, Ge-Xia (2016): Species of the Poaceae-associated genus Bamboosiella (Thysanoptera, Phlaeothripidae) from China, with three new species. Zootaxa 4184 (3): 541-552, DOI: http://doi.org/10.11646/zootaxa.4184.3.

    A new species of Eulachnus Del Guercio from China (Hemiptera: Aphididae Lachninae)

    No full text
    Kanturski, Mariusz, Qiao, Ge-Xia, Favret, Colin (2022): A new species of Eulachnus Del Guercio from China (Hemiptera: Aphididae Lachninae). Zootaxa 5183 (1): 380-389, DOI: https://doi.org/10.11646/zootaxa.5183.1.2

    Review Of The Genus Takecallis Matsumura (Homoptera: Aphididae: Myzocallidinae) From China And Description Of One New Species

    No full text
    Qiao, Ge-Xia, Zhang, Guang-Xue (2004): Review Of The Genus Takecallis Matsumura (Homoptera: Aphididae: Myzocallidinae) From China And Description Of One New Species. Raffles Bulletin of Zoology 52 (2): 373-378, DOI: http://doi.org/10.5281/zenodo.461898
    corecore