4,482,353 research outputs found
Fabrication and characterisation of novel Ge MOSFETs
No full textAs high-k dielectrics are introduced into commercial Si CMOS (Complimentary Metal Oxide Semiconductor) microelectronics, the 40 year channel/dielectric partnership of Si/SiO2 is ended and the door opened for silicon to be replaced as the active channel material in MOSFETs (Metal Oxide Semiconductor Field Effect Transistor). Germanium is a good candidate as it has higher bulk carrier mobilities than silicon. In addition, Si and Ge form a thermodynamically stable SiGe alloy of any composition, allowing Ge to be implemented as a thin layer on the surface of a standard Si substrate. This thesis is a practical investigation on several aspects of Ge CMOS technology.
High-k dielectric Ge p-MOSFETs are electrically characterised. A large variation in interface state densities is demonstrated to be responsible for a threshold voltage shift and this is proportional to reciprocal peak mobility due to the Coulomb scattering of carriers by charged states. A theoretical mobility is fitted to that measured at 4.2 K and confirms that interface states are the main source of interface charged impurities.
The model demonstrates a reduction in the interface charged impurity density in p-MOSFETs that underwent a PMA (Post Metallisation Anneal) in hydrogen atmosphere and that the anneal also reduces the RMS (Root Mean Square) dielectric/semiconductor interface roughness, from an average of 0.60 nm to 0.48 nm.
High-k strained Ge p-MOSFETs are electrically characterised and have peak mobilities at 300 K (470 cm2 V-1 s-1) and 4.2 K (1780 cm2 V-1 s-1) far in excess of those measured for the unstrained Ge p-MOSFETs (285 cm2 V-1 s-1,785 cm2 V-1 s-1 respectively). Strained Ge n-MOSFETs perform significantly worse than standard Si P, - MOSFETs primarily due to a high source/drain resistance.
A 10 nm thick SiGe-01 (On Insulator) layer with a Ge composition of 58% is obtained from a 55 nm Si0_88Ge1o2. initial layer on 100 nm Si-Ol substrate via the germanium condensation technique. For the first time, germanium is demonstrated to diffuse through the BOX (Buried OXide) during Ge-condensation and into the underlying Si substrate. An order of magnitude increase in the calculated ITOX (Internal Thermal OXidation) rate of the BOX in the final stages of Ge-condensation is hypothesised to be responsible for stopping this diffusion
Mechanism of vertical Ge nanowire nucleation on Si (111) during subeutectic annealing and growth
No full textThe direct integration of Ge nanowires with silicon is of interest in multiple applications. In this work, we describe the growth of high-quality, vertically oriented Ge nanowires on Si (111) substrates utilizing a completely sub-Au-Si-eutectic annealing and growth procedure. With all other conditions remaining identical, annealing below the Au-Si eutectic results in successful heteroepitaxial nucleation and growth of Ge nanowires on Si substrate while annealing above the Au-Si eutectic leads to randomly oriented growth. A model is presented to elucidate the effect of the annealing temperature, in which we hypothesized that sub-Au-Si-eutectic annealing leads to the formation of a single and well-oriented interface, essential to template heteroepitaxial nucleation. These results are critically dependent on substrate preparation and lead to the creation of integrated nanowire systems with a low thermal budget process
Strain-relaxed, high Ge content, SiGe layers grown on Si (100) substrate by reduced pressure - chemical vapour deposition (RP-CVD)
No full textA different approach was taken to relieve strain from a high Germanium (Ge) content,
Silicon-Germanium (SiGe) layers on a Silicon (Si) (100) substrate by growing a thin Ge
under-layer between substrate and layer. The Ge under-layer acts as a strain reliving platform
for further growth of a high Ge content SiGe layer to improve the structural quality of the
sample by reducing the Root Mean Squared Roughness (RRMS) and threading dislocation density
(TDD).
The proposed structure involves the growth of thin Si0.3Ge0.7 and Si0.5Ge0.95 buffer layers of
an average thickness of 350 nm grown on a Si (100) substrate and their structural qualities
assessed. Experimental techniques include High Resolution X-Ray Diffraction, Atomic Force
Microscopy, Transmission Electron Microscopy, and Defect Etching. All samples were
shown to be fully relaxed and have a surface roughness between 1-8 nm. However, a
threading dislocation density of 109 cm-2 was witnessed. Although these results are the first of
their kind, further research into improving structural qualities is to be investigated in the
future
Ge-on-Si single-photon avalanche diode detectors: design, modeling, fabrication, and characterization at wavelengths 1310 and 1550 nm
No full textThe design, modeling, fabrication, and characterization of single-photon avalanche diode detectors with an epitaxial Ge absorption region grown directly on Si are presented. At 100 K, a single-photon detection efficiency of 4% at 1310 nm wavelength was measured with a dark count rate of ~ 6 megacounts/s, resulting in the lowest reported noise-equivalent power for a Ge-on-Si single-photon avalanche diode detector (1×10-14 WHz-1/2). The first report of 1550 nm wavelength detection efficiency measurements with such a device is presented. A jitter of 300 ps was measured, and preliminary tests on after-pulsing showed only a small increase (a factor of 2) in the normalized dark count rate when the gating frequency was increased from 1 kHz to 1 MHz. These initial results suggest that optimized devices integrated on Si substrates could potentially provide performance comparable to or better than that of many commercially available discrete technologies
Is<i>Crowsoniella relicta</i>really a cucujiform beetle?
No full textCrowsoniella relicta Pace, one of the most obscure and cryptic beetle taxa, was recently transferred from Archostemata to the polyphagan series Cucujiformia. We discuss the arguments in favour of this hypothesis. The placement of the species is evaluated with a cladistic approach and two different morphological data sets: one aiming mainly to clarify the relationships of extinct and extant archostematans, and one aimed at resolving species-level phylogeny for the suborder. The results suggest clearly that a position of Crowsoniella within a polyphagan subgroup is very unlikely, and that a placement in Archostemata is justified and should be maintained. Due to the serious lack of anatomical information, non-destructive mu-CT scanning of enigmatic taxa like Crowsoniella Pace and Sikhotealinia Lafer should have high priority.National Science Foundation of China [31010103913
Electrodeposited Ni/Ge and germanide schottky barriers for nanoelectronics applications
No full textIn recent years metal/semiconductor Schottky barriers have found numerous applications in nanoelectronics. The work presented in this thesis focuses on the improvement of a few of the relevant devices using electrodeposition of metal on Ge for Schottky barrier fabrication. This low energy metallisation technique offers numerous advantages over the physical vapour deposition techniques. Electrical characteristics of the grown diodes show a high quality rectifying behaviour with extremely low leakage currents even on highly doped Ge. A non-Arrhenius behaviour of the temperature dependence is observed for the grown Ni/Ge diodes on lowly doped Ge that is explained by a spatial variation of the barrier heights. The inhomogeneity of the barrier hights is explained in line with an intrinsic surface states model for Ge. The understanding of the intrinsic surface states will help to create ohmic contacts for doped n-MOSFETs. NiGe were formed single phase by annealing. Results reveal that by using these high-quality germanide Schottky barriers as the source/drain, the subthreshold leakage currents of a Schottky barrier MOSFET could be minimised, in particular, due to the very low drain/body junction leakage current exhibited by the electrodeposited diodes. The Ni/Ge diodes on highly doped Ge show negative differential conductance at low temperature. This effect is attributed to the intervalley electron transfer in Ge conduction band to a low mobility valley. The results show experimentally that Schottky junctions could be used for hot electron injection in transferred-electron devices. A vertical Co/Ni/Si structure has been fabricated for spin injection and detection in Si. It is shown that the system functions electrically well although no magnetoresistance indicative of spin injection was observed
On the head morphology of Tetraphalerus, the phylogeny of Archostemata and the basal branching events in Coleoptera
No full textInternal and external features of Tetraphalerus bruchi were studied using X-ray microtomography (mu-CT) and other techniques, and head structures were described in detail. mu-Ct is highly efficient for the assessment of anatomical data. A data matrix with 90 morphological characters of recent and fossil beetles was analyzed with different approaches (parsimony, Bayesian analysis). The results of the parsimony analysis resulted in the following branching pattern: (dagger Tshekardocoleidae + (dagger Permocupedidae, dagger Rhombocoleidae + (dagger Triadocupedidae + ((Adephaga + (Myxophaga + Polyphaga))) + Archostemata s.str. [including Jurodidae]))). Sikhotealinia is placed as sister group of dagger Jurodes (Jurodidae), and Jurodidae as sister group of the remaining Archostemata (Bayesian analysis) or of a clade comprising Micromalthidae, Crowsoniellidae, dagger Ademosynidae, dagger Schizophoridae and dagger Catiniidae. The monophyly of Ommatidae and Cupedidae is well supported and Priacma is placed as the sister group of all other Cupedidae. Important events in the early evolution of Coleoptera are the shortening of the elytra and the transformation of the elytral venation (Coleoptera excluding dagger Tshekardocoleidae), the formation of a closed subelytral space (Coleoptera excluding dagger Tshekardocoleidae and dagger Permocupedidae), the reduction of two apical antennomeres, and the loss of the broad prothoracic postcoxal bridge (Coleoptera excluding dagger Tshekardocoleidae, dagger Permocupedidae and dagger Rhombocoleidae). Plesiomorphic features preserved in extant Archostemata are the tuberculate cuticle, the elytral pattern with parallel longitudinal ribs and window punctures, a mesoventrite with a transverse ridge, triangular mesocoxae with a distinct meron, and the exposed metatrochantin. The fossils included in the analyses do not only contribute to the reconstruction of character evolution but also influence the branching pattern. An understanding of the major evolutionary events in Coleoptera would not be possible without considering the rich fossil record of Permian and Mesozoic beetles. (C) The Willi Hennig Society 2007
Tsounkranaglenea hefferni gen. et sp. nov. from Sabah, Malaysia (Coleoptera Cerambycidae, Lamiinae: Saperdini)
No full textLin, Mei-Ying, Ge, Si-Qin (2021): Tsounkranaglenea hefferni gen. et sp. nov. from Sabah, Malaysia (Coleoptera Cerambycidae, Lamiinae: Saperdini). Zootaxa 5048 (2): 289-297, DOI: https://doi.org/10.11646/zootaxa.5048.2.
Nü si ji.
No full text葛琴著.At head of title: 電影劇本.本電子書乃根據《香港版權條例(第528章)》而複製, 並只可在大學圖書館系統內的獨立電子書系統上使用.Ge Qin zhu.Ben dian zi shu nai gen ju "Xianggang ban quan tiao li (Di 528 zhang)" er fu zhi, bing zhi ke zai da xue tu shu guan xi tong nei de du li dian zi shu xi tong shang shi yong.At head of title: Dian ying ju ben
Transport properties for pure strained Ge quantum well
No full textModulation doped heterostructures consisting of a strained Ge (sGe) quantum well on a Si0.2Ge0.8 virtual substrate have been used to study enhancement of the transport properties of holes in the sGe channel due to the effective reduction of impurity scattering by placing the doping layer away from the channel.
Electrical and structural analysis was performed for sGe heterostructures produced with a range of growth parameters. The highest hole mobility was 1.34×106 cm2 /Vs at 0.5 K for a sGe quantum well in a 'normal' structure (i.e. doped above the channel) at a sheet density of 2.9×1011 cm-2, which is the largest hole mobility reported in Ge to date. 'Inverted' structures (doping layer under the channel) were also studied for different sample parameters such as channel thickness, spacer thickness, doping and different temperature growth, with a hole
mobility as high as 5.08×105 cm2 /Vs at a sheet density of 5.14×1011 cm-2 at 90 mK.
Simulations of the scattering limited mobility for inverted and normal structures were performed and showed that at low sheet density background impurity scattering limits the low temperature hole mobility. However, as the sheet density increases interface roughness scattering becomes the mobility limiting process, especially in the case of inverted structures where the resistivity and mobility anisotropy is more pronounced.
Magnetotransport measurements revealed the lowest reported effective mass for holes in Ge of 0.063±0.001 m0 for the normal structure and 0.07±0.002 m0 & 0.063±0.003 m0 for two inverted structures, and highest Dingle factors of α=78 and 33 for the normal and inverted structures, respectively. The low level of background impurities, high structural quality, and pure Ge channel revealed by structure characterisation are believed to be responsible for these exceptionally high values of mobility
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