2,571,156 research outputs found
Hedonic Prices and House Numbers: The Influence of Feng Shui
No full textIn contemporary practice, feng shui incorporates a wide range of concepts considered to affect a person’s luck. These include traditional ideas about site selection and building design, as well as newer beliefs about the “luckiness” of certain numbers. Focusing on an area with a relatively high percentage of Chinese households in Auckland, New Zealand, this paper uses hedonic price analysis to investigate whether house values are affected by lucky and unlucky numbers. Sales transactions for 1989 to 1996 are used in this analysis. The results demonstrate that lucky house numbers are capitalised into house values.Feng shui, hedonic price model, lucky, New Zealand
Jiang nan di qu ge qu feng ge jie shao
No full text1. 摔琴 -- 2. 江南地區歌曲風格介紹.Possibly reproduced from other commercial recording or radio broadcast (Pending for review)Electronic reproduction from Rulan Chao Pian Audio Cassette Collection.Performers, unknown.Sung in Chinese.1. shuai qin -- 2. Jiang nan di qu ge qu feng ge jie shao
Case Studies: Feng Shui Integrated Applications for Built Environment Analysis
No full textThis chapter outlines both the Feng Shui and Western concepts and practice for built environment analysis, and then compares Feng Shui model with Western contemporary models using three residential apartments as case studies
Fabrication and characterisation of novel Ge MOSFETs
No full textAs high-k dielectrics are introduced into commercial Si CMOS (Complimentary Metal Oxide Semiconductor) microelectronics, the 40 year channel/dielectric partnership of Si/SiO2 is ended and the door opened for silicon to be replaced as the active channel material in MOSFETs (Metal Oxide Semiconductor Field Effect Transistor). Germanium is a good candidate as it has higher bulk carrier mobilities than silicon. In addition, Si and Ge form a thermodynamically stable SiGe alloy of any composition, allowing Ge to be implemented as a thin layer on the surface of a standard Si substrate. This thesis is a practical investigation on several aspects of Ge CMOS technology.
High-k dielectric Ge p-MOSFETs are electrically characterised. A large variation in interface state densities is demonstrated to be responsible for a threshold voltage shift and this is proportional to reciprocal peak mobility due to the Coulomb scattering of carriers by charged states. A theoretical mobility is fitted to that measured at 4.2 K and confirms that interface states are the main source of interface charged impurities.
The model demonstrates a reduction in the interface charged impurity density in p-MOSFETs that underwent a PMA (Post Metallisation Anneal) in hydrogen atmosphere and that the anneal also reduces the RMS (Root Mean Square) dielectric/semiconductor interface roughness, from an average of 0.60 nm to 0.48 nm.
High-k strained Ge p-MOSFETs are electrically characterised and have peak mobilities at 300 K (470 cm2 V-1 s-1) and 4.2 K (1780 cm2 V-1 s-1) far in excess of those measured for the unstrained Ge p-MOSFETs (285 cm2 V-1 s-1,785 cm2 V-1 s-1 respectively). Strained Ge n-MOSFETs perform significantly worse than standard Si P, - MOSFETs primarily due to a high source/drain resistance.
A 10 nm thick SiGe-01 (On Insulator) layer with a Ge composition of 58% is obtained from a 55 nm Si0_88Ge1o2. initial layer on 100 nm Si-Ol substrate via the germanium condensation technique. For the first time, germanium is demonstrated to diffuse through the BOX (Buried OXide) during Ge-condensation and into the underlying Si substrate. An order of magnitude increase in the calculated ITOX (Internal Thermal OXidation) rate of the BOX in the final stages of Ge-condensation is hypothesised to be responsible for stopping this diffusion
Panduan Feng Shui Praktis untuk Rumah Tinggal
No full textBuku "Panduan Feng Shui Praktis untuk Rumah Tinggal" membahas konsep dan aplikasi praktis Feng Shui dalam mendesain dan mengatur rumah tinggal. Buku ini memberikan panduan tentang bagaimana memanfaatkan prinsip-prinsip Feng Shui untuk menciptakan lingkungan yang seimbang dan harmonis di rumah. Isi buku ini memberikan wawasan mengenai bagaimana tata letak, dekorasi, dan energi dalam rumah dapat mempengaruhi kesejahteraan dan keberuntungan penghuninya.148 p. ; ill : 23 cm
The RNA surveillance factor UPF1 represses myogenesis via its E3 ubiquitin ligase activity. Feng et al
No full textRaw images data for each figures in the "The RNA surveillance factor UPF1 represses myogenesis via its E3 ubiquitin ligase activity. Feng et al" paper submitted to Molecular Cell
Almanak Feng Shui 2013 Ular Air
No full textBuku ini adalah almanak Feng Shui yang memberikan wacana khusus kepada pembaca untuk memahami pengaruh alam terhadap siklus bioritme kehidupan dalam astrologi China. Informasi dalam buku ini didasarkan pada penjabaran Feng Shui dimensi waktu yang berasal dari budaya Tiongkok kuno.140 p. ; 23 cm
168 Tip Feng Shui Praktis untuk Rumah
No full textBuku ini memberikan 168 tips praktis Feng Shui untuk membersihkan rumah dan menciptakan suasana yang positif dan bersemangat. Buku ini membahas cara untuk menghilangkan barang-barang yang tidak terpakai lagi dan merapikan ruangan berdasarkan prinsip-prinsip Feng Shui tradisional. Tujuannya adalah untuk mengalirkan energi positif dan menciptakan suasana yang tenang dan nyaman di rumah.155 p. ; 25 cm
Lao ge ming yu dao xin wen ti!
No full text东风造反队.文字: 老革命遇到新问题! ;下款: 东风造反队 批刘先锋画展 一九六七.十二.三.裝裱後高寬: 115 x 49 cm.Dong feng zao fan dui.Wen zi : Lao ge ming yu dao xin wen ti! ; Xia kuan : Dong feng zao fan dui pi Liu xian feng hua zhan 1967. 12. 3.Zhuang biao hou gao kuan : 115 x 49 cm
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