39,946 research outputs found
Lun yu zhu shu jie jing: [20 juan]. v.133
No full text何晏集解 ; 邢昺疏.綫裝.框17.9 x 12.5 公分, 9行21字, 小字雙行同, 白口, 無魚尾, 左右雙邊, 版心下刻"汲古閣".Xian zhuang.Kuang 17.9 x 12.5 gong fen, 9 hang 21 zi, xiao zi shuang hang tong, bai kou, wu yu wei, zuo you shuang bian, ban xin xia ke "Ji gu ge".He Yan ji jie ; Xing Bing shu
Yu zhong yang wen ge dou
No full text《三忠于》红卫兵.文字: 与中央文革斗;下款: 《三忠于》红卫兵批邓漫画 一九六七年八月卅日绘 ; 印記: 忠于毛主席 忠于毛泽东思想 忠于毛主席的革命路线 .裝裱後高寬: 146 x 38 cm.Title devised by cataloguer."San zhong yu" hong wei bing.Wen zi : Yu Zhong yang wen ge dou; Xia kuan : "San zhong yu" hong wei bing pi Deng man hua 1967 nian 8 yue 30 ri hui ; Yin ji : zhong yu Mao zhu xi zhong yu Mao Zedong si xiang zhong yu Mao zhu xi de ge ming lu xian .Zhuang biao hou gao kuan : 146 x 38 cm
Hui tu zhen ben jing shi mu yu jin gang zuan
No full text著作者余好辯, 伍憤時.Cover title.上下卷.On double leaves, East Asian binding.木魚歌文.zhu zuo zhe Yu Haobian, Wu Fenshi.Shang xia juan.Mu yu ge wen
Yu xu yi yan
No full textv.1. 醫林獵要 / 黃保康輯 ; [黃]任恆編校 -- v.2. 吳鞠通方歌 / 黃保康著 ; 黃任恆校注 -- 陳修園方歌 / 黃任恆編 -- v.3. 貽令堂雜俎 : [四編], 雜說, 遺詩 / 黃保康撰 ; [黃]任恆編校 -- 與壻遺言 : 附錄 / 黃保康撰.v.1. Yi lin lie yao / Huang Baokang ji ; [Huang] Renheng bian jiao -- v.2. Wu ju tong fang ge / Huang Baokang zhu ; Huang Renheng jiao zhu -- Chen Xiuyuan fang ge / Huang Renheng bian -- v.3. Yi ling tang za zu : [si bian], za shuo, yi shi / Huang Baokang zhuan ; [Huang] Renheng bian jiao -- Yu xu yi yan : fu lu / Huang Baokang zhuan.[黃保康撰].綫裝.框14.5x11.7公分, 10行20字, 小字雙行同. 黑口, 左右雙邊, 單黑魚尾. 版心中鐫題名, 卷次, 下鐫葉次.書名背頁刻"宣統三年五月刻成"《中國叢書綜錄》p.727著錄 ; 《中國中醫古籍總目》13297著錄.《貽令堂雜俎》分經, 史, 子, 集編.鈐"莊兆祥印"朱, 白文各一方.Xian zhuang.Kuang 14.5 x 11.7 gong fen, 10 hang 20 zi, xiao zi shuang hang tong. Hei kou, zuo you shuang bian, dan hei yu wei. Ban xin zhong juan ti ming, juan ci, xia juan ye ci.Shu ming bei ye ke "Xuantong san nian wu yue ke cheng"Detailed notes in vernacular field only."Yi ling tang za zu" fen jing, shi, zi, ji bian.[Huang Baokang zhuan].Qian "Zhuang Zhaoxiang yin" zhu, bai wen ge yi fang
Guangdong xin yu: er shi ba juan. v.1
No full text屈大均譔.綫裝.框17.5 x 13.5 cm., 11行19字, 白口, 單線魚尾, 四周單邊, 版心上鐫書名, 中鐫卷次, 類名, 下鐫葉次.Caption title.內封面鐫"... 水天閣繡版".康熙庚辰[1700]潘耒《廣東新語序》.内封題"番禺屈翁山先生撰, 水天閣繡版"有"本水西家藏"印.鈐有"蔭堂珍藏"、"屈向邦印"Qu Dajun zhuan.Xian zhuang.Kuang 17.5 x 13.5 cm., 11 hang 19 zi, bai kou, dan xian yu wei, si zhou dan bian, ban xin shang juan shu ming, zhong juan juan ci, lei ming, xia juan ye ci.Nei feng mian juan "... Shui tian ge xiu ban."Kangxi geng chen [1700] Pan Lei "Guangdong xin yu xu."You "Ben shui xi jia cang" yin.Detailed notes in vernacular field only.Detailed notes in vernacular field only
Chao cai liao yong yu ya bo chang ju jiao: ge xiang yi xing hao sun cai liao yu ti du guang xue na mi bo dao guan
No full textKwok, Hui Kin = 超材料用於亞波長聚焦 : 各向異性耗損材料與梯度光學納米波導管 / 郭栩健.Thesis M.Phil. Chinese University of Hong Kong 2015.Includes bibliographical references (leaves 67-69).Abstracts also in Chinese.Title from PDF title page (viewed on 26, September, 2016).Kwok, Hui Kin = Chao cai liao yong yu ya bo chang ju jiao : ge xiang yi xing hao sun cai liao yu ti du guang xue na mi bo dao guan / Guo Xujian
Xing, Ma Hua ren yu xin hai ge ming
No full textBen shu zhu yao tao lun yi jiu ling ling nian zhi yi jiu yi yi nian jian Xinjiapo yu Malaixiya ge di Hua qiao suo can yu de fan Qing ge ming yun dong zhi yuan yuan ji qi fa zhan, bing lun shu zhe gu li liang ru he fa zhan cheng wei hai wai Hua qiao ge ming yun dong de zhu liu. ci wai, ben shu ye dui Xinjiapo he Malaixiya ge di Hua qiao dui guo nei de fan Man yu dong de fan ying jia yi fen xi, bing tao lun liang di Hua qiao dui tui fan Man Qing zheng fu suo zuo chu de gong xia
An n-type SiGe/Ge QC structure utilizing the deep Ge quantum well for electron at the Gamma point
No full textIn this paper, an n-type Si1-xGex/Ge (x >= 0.85) quantum cascade (QC) structure utilizing a deep Ge quantum well for electrons at the Gamma point is proposed. Based on linear interpolation, a conduction band offset at the Gamma point in a Si1-xGex/Ge ( x >= 0.85) heterostructure is presented, which is suitable for designing a QC laser. This approach has the advantages of a large conduction band offset at the Gamma point, a low lattice mismatch between the Si1-xGex/Ge ( x >= 0.85) active layers and the Si1-yGey ( y > x) virtual substrate, a small electron effective mass in the Gamma band, simple conduction energy band structures and a simple phonon scattering mechanism in the Ge quantum well. The theory predicts that if high-energy electrons are continuously injected into the Gamma band, a quasi-equilibrium distribution of electrons between the Gamma and L bands can be reached and held, i.e., electrons with a certain density will be kept in the Gamma band. This result is supported by the intervalley scattering experiments. In n-type Si1-xGex/Ge ( x >= 0.85) QC structures, population inversion between the laser's upper and lower levels is demonstrated
High quality Schottky contacts for limiting leakage currents in Ge-based Schottky barrier MOSFETs
No full textSchottky barrier (SB) Ge channel MOSFETs suffer from high drain-body leakage at the required elevated substrate doping concentrations to suppress source-drain leakage. Here we show that electrodeposited Ni-Ge and NiGe/Ge Schottky diodes on highly doped Ge show low off current, which might make them suitable for SB p-MOSFETs. The Schottky diodes showed rectification of up to 5 orders in magnitude. At low forward biases the overlap of the forward current density curves for the as deposited Ni/n-Ge and NiGe/n-Ge Schottky diodes indicates Fermi-level pinning in the Ge band gap. The SB height for electrons remains virtually constant at 0.52 eV (indicating a hole barrier height of 0.14 eV) under various annealing temperatures. The series resistance decreases with increasing annealing temperature in agreement with four point probe measurements indicating the lower specific resistance of NiGe as compared to Ni, which is crucial for high drive current in SB p-MOSFETs. We show by numerical simulation that by incorporating such high quality Schottky diodes in the source/drain of a Ge channel PMOS, highly doped substrate could be used to minimize the subthreshold source to drain leakage current
Social transform and commercial growth of overseas Chinese = Hai wai hua ren de she hui bian ge yu shang ye cheng zhang
No full textDi 1 ban Hai wai hua ren de she hui bian ge yu shang ye cheng zhang / Yan Qinghuang zhuhttp://trove.nla.gov.au/work/2103578
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