16,828 research outputs found
Coaxial Cell-printing of Freestanding, Perfusable and Functional in vitro Vascular Models for Recapitulation of Native Vascular Endothelium Pathophysiology
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Mechanism of vertical Ge nanowire nucleation on Si (111) during subeutectic annealing and growth
No full textThe direct integration of Ge nanowires with silicon is of interest in multiple applications. In this work, we describe the growth of high-quality, vertically oriented Ge nanowires on Si (111) substrates utilizing a completely sub-Au-Si-eutectic annealing and growth procedure. With all other conditions remaining identical, annealing below the Au-Si eutectic results in successful heteroepitaxial nucleation and growth of Ge nanowires on Si substrate while annealing above the Au-Si eutectic leads to randomly oriented growth. A model is presented to elucidate the effect of the annealing temperature, in which we hypothesized that sub-Au-Si-eutectic annealing leads to the formation of a single and well-oriented interface, essential to template heteroepitaxial nucleation. These results are critically dependent on substrate preparation and lead to the creation of integrated nanowire systems with a low thermal budget process
Electrodeposited Ni/Ge and germanide schottky barriers for nanoelectronics applications
No full textIn recent years metal/semiconductor Schottky barriers have found numerous applications in nanoelectronics. The work presented in this thesis focuses on the improvement of a few of the relevant devices using electrodeposition of metal on Ge for Schottky barrier fabrication. This low energy metallisation technique offers numerous advantages over the physical vapour deposition techniques. Electrical characteristics of the grown diodes show a high quality rectifying behaviour with extremely low leakage currents even on highly doped Ge. A non-Arrhenius behaviour of the temperature dependence is observed for the grown Ni/Ge diodes on lowly doped Ge that is explained by a spatial variation of the barrier heights. The inhomogeneity of the barrier hights is explained in line with an intrinsic surface states model for Ge. The understanding of the intrinsic surface states will help to create ohmic contacts for doped n-MOSFETs. NiGe were formed single phase by annealing. Results reveal that by using these high-quality germanide Schottky barriers as the source/drain, the subthreshold leakage currents of a Schottky barrier MOSFET could be minimised, in particular, due to the very low drain/body junction leakage current exhibited by the electrodeposited diodes. The Ni/Ge diodes on highly doped Ge show negative differential conductance at low temperature. This effect is attributed to the intervalley electron transfer in Ge conduction band to a low mobility valley. The results show experimentally that Schottky junctions could be used for hot electron injection in transferred-electron devices. A vertical Co/Ni/Si structure has been fabricated for spin injection and detection in Si. It is shown that the system functions electrically well although no magnetoresistance indicative of spin injection was observed
Zhai ju ji shi
No full text[V.1-16]. 渭南文集 : 五十卷 -- [v.17-68]. 劍南詩稾 : 八十五卷 -- [v.68]. 放翁逸稾 : [二卷] -- [v.68-72]. 南唐書 : 十八卷, 附音釋 -- [v.72]. 家世舊聞 -- 齋居紀事.[V.1-16]. Weinan wen ji : wu shi juan -- [v.17-68]. jian nan shi gao : ba shi wu juan -- [v.68]. Fangweng yi gao : [er juan] -- [v.68-72]. Nan Tang shu : shi ba juan, fu yin shi -- [v.72]. Jia shi jiu wen -- Zhai ju ji shi.陸游.綫裝, 8函.框18.6x14.2公分, 8行18字, 小字雙行同. 白口, 左右雙邊, 無魚尾. 版心上鐫子目題, 中鐫卷次, 下鐫"汲古閣"叢書第一冊內封背頁記"虞山詩禮堂張氏藏板", 並注子目"渭南文集", "劍南詩稾", "逸稾", "南唐書", "家世舊聞"每題卷末均有毛晋言及刻書事.《放翁逸稾》分上, 下卷.見《香港中文大學圖書館古籍善本書錄》(增訂版)(p.351)《南唐書》附: 南唐書音釋 / 戚光校并音釋.Xian zhuang, 8 han.Kuang 18.6 x 14.2 gong fen, 8 hang 18 zi, xiao zi shuang hang tong. Bai kou, zuo you shuang bian, wu yu wei. Ban xin shang juan zi mu ti, zhong juan juan ci, xia juan "Ji gu ge"Cong shu di yi ce nei feng bei ye ji "Yushan Shi li tang Zhang shi cang ban", bing zhu zi mu "Weinan wen ji", "Jian nan shi gao", "Yi gao", "Nan Tang shu", "Jia shi jiu wen"Mei ti juan mo jun you mao jin yan ji ke shu shi."Fangweng yi gao" fen shang, xia juan.Jian "Xianggang Zhong wen da xue tu shu guan gu ji shan ben shu lu" (zeng ding ban)(p.351)Lu You."Nan Tang shu" fu: Nan Tang shu yin shi / Qi Guang jiao bing yin shi
A study of the modern Chinese novel, Gao Yubao and its author Gao Yubao
No full textGao Yubao, a soldier in the Chinese People's Liberation Army, was nearly illiterate when he began to write his autobiographical novel, Gao Yubao, in 1949. The PLA's literary branch helped him finish the novel and after its publication Gao and his struggle to become literate by writing a novel served as an inspiration for others striving for education. Gao Yubao was republished several times up until as late as the 1970's and each time it was republished it was revised. This paper traces the history of the novel Gao Yubao and its author with special attention being given to comparing the changes made in the various editions of the novel. The conflicts between amateurism and professionalism and between fact and romanticization and those conflicts inherent in the constant revisings demanded of an already revised work are shown to be unresolvable because of the nature of contemporary Chinese literature.Arts, Faculty ofAsian Studies, Department ofGraduat
Increasing the photoluminescence intensity of Ge islands by chemical etching
No full textSelf-assembled Ge islands were grown on Si(100) substrate by Si2H6-Ge molecular beam epitaxy. After being subjected to chemical etching, it is found that the photoluminescence from the etched Ge islands became more intense and shifted to the higher-energy side compared to that of the as-deposited Ge islands. This behaviour was explained by the effect of chemical etching on the morphology of the Ge islands. Our results demonstrate that chemical etching can be a way to change the luminescence property of the as-deposited islands
Biomaterials-based 3D cell printing for next-generation therapeutics and diagnostics
No full textBuilding human tissues via 3D cell printing technology has received particular attention due to its process flexibility and versatility. This technology enables the recapitulation of unique features of human tissues and the all-in-one manufacturing process through the design of smart and advanced biomaterials and proper polymerization techniques. For the optimal engineering of tissues, a higher-order assembly of physiological components, including cells, biomaterials, and biomolecules, should meet the critical requirements for tissue morphogenesis and vascularization. The convergence of 3D cell printing with a microfluidic approach has led to a significant leap in the vascularization of engineering tissues. In addition, recent cutting-edge technology in stem cells and genetic engineering can potentially be adapted to the 3D tissue fabrication technique, and it has great potential to shift the paradigm of disease modeling and the study of unknown disease mechanisms required for precision medicine. This review gives an overview of recent developments in 3D cell printing and bioinks and provides technical requirements for engineering human tissues. Finally, we propose suggestions on the development of next generation therapeutics and diagnostics. (C) 2017 Elsevier Ltd. All rights reserved.11Nsciescopu
3D Cell Printing of Perfusable and Vascularized Human Skin Equivalents Composed of Epidermis, Dermis, and Hypodermis for Better Recapitulation of Skin Anatomy
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sj-docx-1-srd-10.1177_23780231221142677 – Supplemental material for Work-Family Policies and Gender Inequalities in Childcare Time
No full textSupplemental material, sj-docx-1-srd-10.1177_23780231221142677 for Work-Family Policies and Gender Inequalities in Childcare Time by Melody Ge Gao and Hangqing Ruan in Socius</p
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