343 research outputs found
Efficient 671-nm pump source by intracavity-doubling a diode-pumped Nd:YVO4 laser
No full textA diode-pumped, intracavity-doubled Nd:YVO4 laser, generating as much as 760 mW of power at 671 nm, which was used to efficiently pump a Cr:LiSAF laser, is described. A slope efficiency of 39% with maximum continuous-wave output power of .180 mW was achieved with this system. Experiments in tunability and generation of ultrashort pulses are also reported
Efficient intracavity cw doubled vanadate laser at 671 nm for pumping a tunable Cr:LiSAF source
No full textEfficient intracavity SHG of 1.3-um vanadate laser with LBO yields about 600 mW output power at 670 nm, TEM00 with small (1%) amplitude noise. This laser source was employed for pumping a Cr:LiSAF laser, allowing excellent tuning performance as well as femtosecond pulse generation
Laser diodes and diode-pumped solid state laser systems:advantages, limits and application fields
No full textAn overview of the solid state laser technology is presented, with special emphasis on industrial and biomedical applications
Continuous passive mode-locked and passive stabilized low pump power Yb:YAG laser
No full textPassive stabilization of cw mode-locking in diode-pumped Yb:YAG has been achieved with inverse saturable provided by an off-phase-matching LBO crystal. 1-ps Fourier-limited pulses have been measured
Self-stabilized and dispersion-compensated passively mode-locked Yb:YAG laser
No full textSelf-stabilized passive mode-locking of a diode-pumped Yb:yttrium aluminum garnet laser with a semiconductor saturable absorber was achieved using an off-phase-matching second-harmonic crystal. According to the numerical model, such a condition is accomplished by self-defocusing in the nonlinear crystal in the presence of positive intracavity dispersion. Robust mode locking with Fourier-limited 1.0-ps pulses was obtained, whereas mode locking, unassisted by the nonlinear crystal, yielded 2.2-ps pulses, with the laser operating near the edge of the stability region in order to minimize the saturation energy of the semiconductor device
High-brightness 2.4-W continuous-wave Nd:GdVO4 laser at 670 nm
No full textWe report on a diode-pumped 1.3-mm Nd:GdVO4 cw laser, intracavity doubled for highly efficient generation
of red light. We obtained as much as 2.4 W of power at 670 nm (corresponding to 26% optical-to-optical
efficiency) in a nearly TEM00 mode and with small amplitude noise. To the best of our knowledge, these
results represent the highest performance at this wavelength for cw solid-state lasers
2.4-W intracavity doubled cw Nd:GdVO4 laser at 670 nm
No full textIntracavity second harmonic generation with diode-pumped Nd:GdVO4 laser and LBO nonlinear crystal yielded as much as 2.4 W in a TEM00 mode at 671 nm, with a very compact resonator.
The laser is highly efficient and low-noise
Multi-kHz, High Energy, Femtosecond Diode-Pumped Yb:CaF2 Regenerative Amplifier
No full textWe report an efficient, high-energy, diode-pumped Yb:CaF2 regenerative amplifier. Energies up to 1.02 mJ at 1045-nm and 5 kHz-repetition rate in 324 fs-long pulses have been obtained with a beam quality factor of M2 =1.1
Studio e realizzazione di un apparato per microscopia ottica non lineare
No full textLo scopo di questo lavoro è quello di realizzare un microscopio ottico non lineare con prestazioni analoghe ai sistemi commerciali attualmente disponibili, che presenti però caratteristiche di compattezza e costo che lo rendano competitivo per applicazioni industriali o medico biologiche.
Il sistema nel suo complesso consta di un laser a impulsi ultracorti progettato ad hoc, di un’ottica di focalizzazione del fascio laser che permette la scansione bidimensionale di un campione, di un sistema elettronica di controllo della scansione, acquisizione del segnale generato dal campione e gestione e visualizzazione dell’immagine completamente originale.
Il sistema presenta caratteristiche di elevata modularità, che permettono la scelta di obiettivi, rivelatori e sorgenti laser adeguati a differenti applicazioni su campioni intercambiabili con facilità
High pulse energy multiwatt Yb:CaAlGdO4 and Yb:CaF2 regenerative amplifiers
No full textWe investigated and compared Yb:CaAlGdO4 and Yb:CaF2 regenerative amplifiers at repetition rates 5-10 kHz, a frequency range interesting for industrial applications requiring relatively high pulse energy. Both materials allow for pulse energies close to 1 mJ with sub-400-fs pulses. The two laser materials offer comparable performance in the pump power range investigated. The same regenerative amplifiers can be run up to 500 kHz for much faster material processing, with maximum output power of up to 9.4 W
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