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Scaling Relations and Universality in Electrical Failure Processes of Thin Films: Is It Possible to Predict Failure Times?
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A Percolative Approach to Reliability of Thin Films
No full textDegradation of thin films is studied within a stochastic
approach based on a percolative technique. The thin film
is modeled as a two-dimensional (2-D) random resistor network in thermal contact with a substrate. Its microscopic degradation is characterized by a breaking probability of the single resistor. A recovery of the damage is also allowed. The degradation and failure of metallic interconnects and dielectric insulators are then described as a conductor-insulator (CI) and an insulator-conductor (IC) transition, respectively. The recovery of the damage competing with the degradation can also lead to a steady-state condition. The main features of experiments are reproduced together with their statistical properties. Our approach thus provides a unified description of degradation and failure processes in terms of physical parameters
A Percolative Approach to Degradation of Thin Films for Reliability of Electronic Devices
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Scaling law of resistance fluctuations in stationary random resistor networks
No full textIn a random resistor network we consider the simultaneous evolution of two competing random processes consisting in breaking and recovering the elementary resistors with probabilities WD and WR. The condition WR > WD/(1+ WD) leads to a stationary state, while in the opposite case, the broken resistor fraction reaches the percolation threshold pc. We study the resistance noise of this system under stationary conditions by Monte Carlo simulations. The variance of resistance fluctuations is found to follow a scaling law |p - p_c|^-k_0 with k_0 = 5.5. The proposed model relates quantitatively the defectiveness of a disordered media with its electrical and excess-noise characteristics
Stationary regime of random resistor networks under biased percolation
No full textThe state of a two-dimensional random resistor network, resulting from the simultaneous evolutions of two competing biased percolations, is studied in a wide range of bias values. Monte Carlo simulations show that when the external current 1 is below the threshold value for electrical breakdown, the network reaches a steady state with nonlinear current-voltage characteristics. The properties of this nonlinear regime are investigated as a function of different model parameters. A scaling relation is found between (R)/(R)(0) and I/I-0, where (R) is the average resistance, (R)(0) the linear regime resistance and to the threshold value for the onset of nonlinearity. The scaling exponent is found to be independent of the model parameters. A similar scaling behaviour is also found for the relative variance of resistance fluctuations. These results compare well with resistance measurements in composite materials performed in the Joule regime up to breakdown
A Percolative Approach to Current Fluctuations in the Soft Breakdown of Ultrathin Oxides
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