24 research outputs found
Prostaglandin E1 (PGE1) gastric tissue levels in the rat after truncal vagotomy and/or pre-hepatic portal hypertension.
No full textThree groups of female Wistar rats were considered to study the pathophysiologic changes induced by truncal vagotomy and/or prehepatic portal hypertension. The first group was subjected to transabdominal bilateral truncal vagotomy (T.V.) and Heinecke-Mikulicz pyloroplasty, the second group to main portal vein partial stenosis (P.P.S.), and the third one simultaneously to T.V. plus P.P.S. The rats were sacrificed and the stomach homogenized. The separation and simultaneous measurement of gastric prostaglandin E1 (PGE1) resulted from high performance liquid chromatography (H.P.L.C.). Mass spectrometry (M.S.) was used for identification of several gastric PGE1 samples in purified extracts. Control rats were also sacrificed and examined. With regard to PGE1 gastric contents, the following results are reported: 1.2405 +/- 0.1356 micrograms/g (control rats), 0.786 +/- 0.1296 micrograms/g (T.V. rats), 1.8495 +/- 0.3433 micrograms/g (P.P.S. rats), and 1.2754 +/- 0.1154 micrograms/g (T.V. + P.P.S. rats). The interpretation of results is made at the moment on a hypothetical basis
Contenuto gastrico della prostaglandina E1 (PGE1) nel ratto Wistar maschio e femmina dopo vagotomia tronculare. Risultati sperimentali.
No full textDosaggio sperimentale mediante cromatografia liquida ad alta pressione (H.P.L.C.) della prostaglandina E1 (PGE1) nello stomaco di ratto Wistar maschio e femmina.
No full textModeling Environment for Ge-rich GST Phase Change Memory Cells
No full textEmbedded phase change memory (PCM) show optimized performance and reliability thanks to Ge enrichment of the active GeSbTe material. This work presents the detailed TCAD model for embedded PCMs able to physically reproduce the program operation, crystallization and its impact on reliability and the absence of thermal disturb phenomena. The model shows a good agreement with 28nm technology node structures and a comparison with conventional 225-GST used for stand-alone memory is also proposed
Interaction between forming pulse and integration process flow in ePCM
No full textGe enrichment of the GeSbTe (GST) chalcogenide made possible for embedded phase change memories (ePCM) to guarantee the retention level necessary to satisfy the automotive market's requirements. In Ge-GST devices at the end of the fabrication process memory cells are in the pristine state (virgin) and, in order to be programmed, an activation step is necessary (forming). In this work an investigation on the influence of two back end of the line (BEOL) processes on the virgin state and forming process is presented. A model that accurately replicates both physical and electrical trends is also shown
Prehepatic portal hypertension in the rat. Effect on prostaglandin E1(PGE1) gastric tissue levels.
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Unveiling Retention Physical Mechanism of Ge-rich GST ePCM Technology
No full textIn this work, a comprehensive study of Ge-rich Phase Change Memory set and reset state retention realized by coupling electrical and physical characterizations is presented. The presence of amorphous residuals inside the active region of PCM devices is, for the first time, demonstrated through High Resolution Scanning Transmission Electron Microscopy. The role of such formations was studied by means of electrical characterization and supported by modeling analysis. By comparing the low and high state resistive behavior the retention physics has been analytically modeled with the same framework for both states
Consideration on the Fatigue Damage of Specimens Used for Composite Critical Components Qualification
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