1,721,056 research outputs found
Criteria of choice of the front-end transistor for low noise preamplification of detector signals at sub microsecond shaping times for X and gamma ray spectroscopy
No full textCriteria of choice of the front-end transistor for low-noise preamplification of detector signals at sub-microsecond shaping times for X- and γ-ray spectroscopy
No full textWe present an analysis of the electronic noise contributions which limit the resolution of X- and γ-ray spectrometers employing semiconductor detectors operating at room temperature and at signal processing times in the sub-microsecond range. The figures of merit of the front-end transistors, relevant to attain the highest resolution, are put in evidence. It is shown how the correlation between the gate and drain current noises in FETs plays a significant role in the equivalent noise charge of a charge preamplifier. Some state of the art devices, belonging to different technologies, JFET, MOSFET, MESFET and HFET, are examined
"Toward a Very Low-Power Integrated Charge Preamplifier by Using III-V Field Effect Transistors"
No full text"A low-noise wide-band transimpedance amplifier for current noise spectra measurements".
No full textTheoretical and experimental analysis of intensity noise in a codoped erbium-ytterbium glass laser
No full text
Theoretical and experimental analysis of intensity noise in codoped erbium-ytterbium glass laser
No full textNew Perspectives in High-Speed Low-Noise Charge Amplifiers with Ultra-Wide Band Heterojunction FET's
No full textThe analysis of the noise properties of heterojunction field effect transistors open the perspectives in designing charge preamplifiers operating at short shaping times with good noise performance. We presents the characteristics of these devices, the expected performance and some experimental results on prototypes of HFET charge preamplifiers. © 1995 Elsevier Science B.V
"Low Frequency Gate Current Noise in High Electron Mobility Transistors: Experimental Analysis".
No full textAn experimental investigation on the gate current noise in a pseudomorphic HEMT has been carried out. The measurements have been performed from 10 Hz to 100 kHz, at different bias conditions. It is shown that the noise spectral power density strongly depends on the biasing point and can be explained in terms of carrier trapping phenomena by means of packets of Lorentzian components
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