1,721,142 research outputs found
ORAL CONTRIBUTION - “Three-dimensional anisotropic electronic properties of solution-grown semiconducting organic single crystals” - PRESENTING AUTHOR
No full textORAL CONTRIBUTION - “Solution Growth of Organic Single Crystals of 4-hydroxycyanobenzene (4HCB) Suitable for Investigations on the Three-dimensional Transport Anisotropy in Organic Semiconducting Single Crystals” - PRESENTING AUTHOR
No full textORAL CONTRIBUTION - “Three-dimensional Anisotropic Density of States (DOS) and Carrier Mobilities in Solution Grown Organic Single Crystals Measured by Space-Charge Limited Current (SCLC)” - PRESENTING AUTHOR
No full textORAL CONTRIBUTION - “New clues for understanding the electronic transport in organic semiconductors: anisotropic polaronic signatures in single crystals detected by synchrotron-based IR spectroscopy” - PRESENTING AUTHOR
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Three-dimensional anisotropic electronic properties of solution grown organic single crystals measured by Space-Charge Limited Current (SCLC)
No full textCompensation processes in CdTe-based compounds
No full textThe compensation in semi-insulating CdTe-based compounds is known to be related to the interaction among shallow and deep levels induced by impurities, grown-in lattice defects and by their complexes. We have carried out PICTS (Photo-Induced Current Transient Spectroscopy) and P-DLTS (Photo-Deep Levels Transients Spectroscopy) analyses together with DLTS analyses to investigate the role that acceptors and donors play in the compensation mechanism. To this purpose we have compared semi-insulating materials with different stoichiometry and different resistivity, i.e. with different free carrier concentration. We have examined also semiconducting material in order to compare extrinsically compensated and self-compensated CdTe-compounds. Our attention has been focused on the deep levels close to midgap in order to deepen our understanding of their behaviour as a function of the position of the Fermi level since they are critical for the compensation process. We have achieved experimental evidence that in Cd(1-x)ZhxTe the level H at Ev + 0.75 eV has a donor-like character. The possible extension of the donor-like character of this defect to CdTe:Cl should be positively considered albeit it can not assessed by the present investigation. © 2004 IEEE
Solution-Grown Organic and Perovskite X-Ray Detectors: A New Paradigm for the Direct Detection of Ionizing Radiation
Full text linkThe recent years witnessed an unprecedented enhancement in improved functionality materials and in the sophistication of solution-based device fabrication techniques. Such significant advancements lead to unexpected and effective opportunities for the utilization of solution-grown organic materials and perovskites in the detection of ionizing radiation. This review presents an updated overview of the recently reported top performing and more innovative organic/perovskite-based X-ray detectors, providing a comparison and a critical discussion on the different materials’ properties and performance. Solution-growth methods that allow to obtain detector grade electronic materials are discussed, focusing on the growth both of single crystals and of thin/thick films and foreseeing the implementation of large-area, organic/hybrid-, and perovskite-based radiation detectors. Insights into the X-ray detection mechanisms are provided, detailing the fundamental processes involved in the charge collection and in the photoconductive gain model, together with the typical figures of merit that describe radiation detector performance
Evaluation of diffusion length and surface recombination velocity in semiconductor devices by the method of moments
No full textThe diffusion length and surface recombination velocity of the minority carriers are determined from electron beam induced current (EBIC) profiles on a semiconductor containing a barrier perpendicular to the scanned surface. The evaluation of both the parameters has been obtained by the procedure called "of the first moments," due to Donolato [C. Donolato, Appl. Phys. Lett. 43, 120 (1983)], which is based on the calculation of the first moment about the origin of two induced current profiles. This analysis, based on an exact integral property of the EBIC scans, allows evaluation of the diffusion length and the surface recombination without fitting the experimental profiles. In addition, it is easy to handle and can also be readily applied to real devices
The injection dose effect on the evaluation of bulk and surface parameters in semiconductors
No full textQuantitative electron-beam-induced current measurements on n-type Si have shown injection dose effects both on bulk parameters (diffusion length) and on surface parameters (surface recombination velocity). The experimental findings are discussed on the basis of the Shockley-Read-Hall recombination model. The evaluation of injection dose in the bulk and at the surface of the semiconductor is also discussed. © 1994 Taylor & Francis Group, LLC
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