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Characterization of losses due to absorption in rear-side N-type poly-Si passivating contacts
No full textCharacterization of absorption losses in rear side N-type polycrystalline silicon passivating contacts
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Screen-Printed Metallization of Fired Poly-Si Passivating Contacts (FPC) by In Situ P-Doped LPCVD
No full textIn Situ Phosphorus-Doped Poly-Si by Low Pressure Chemical Vapor Deposition for Passivating Contacts
No full textIndustrial n-type PERT cells with doped polysilicon passivating contacts: Past, present and future
No full textIn Situ Phosphorus-Doped Poly-Si by Low Pressure Chemical Vapor Deposition for Passivating Contacts
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<i>In situ</i> phosphorus-doped polycrystalline silicon films by low pressure chemical vapor deposition for contact passivation of silicon solar cells
No full textsponsorship: The authors would like to acknowledge Rajiv Sharma from KU Leuven for his help with the interfacial oxide development, Sukhvinder Singh and Patrick Choulat from Imec for their help with the contact resistivity measurements and sample fabrication, Thomas Nuytten andStefanie Sergeant from Imec for the Raman spectroscopy measurements, Bastien Douhard and Mustafa Ayyad from Imec for SIMS measurements, Maxim Korytov, Laura Nelissen, and Patricia van Marcke from Imec for the TEM specimen preparation and measurements, and Janusz Bogda-nowicz from Imec for his help with the analysis of the Hall measurement data. This work was supported by the European Union's Horizon2020 Programme for research, technological development, and demonstra-tion [grant number 857793] ; and by the Kuwait for the Advancement of Sciences [grant number CN18-15EE-01] . (European Union's Horizon2020 Programme for research, technological development, and demonstration|857793, Kuwait for the Advancement of Sciences|CN18-15EE-01, H2020 Societal Challenges Programme|857793)status: Publishe
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