1,721,189 research outputs found
Prediction of RF interference effects in smart power integrated circuits
This paper deals with the susceptibility of integrated circuits (ICs) to conducted RF interference. In particular, the propagation and effects of RF interference in smart power ICs is studied. A new method, developed to identify a parasitic substrate-coupling network in VLSI devices, has been customized for a smart power technology process. The layout view of a specific circuit is elaborated in order to extract a netlist composed of the circuits of the die surface and the substrate parasitic network. By using a SPICE-like simulator, circuit simulations have been performed and the prediction of RF interference effects on the behavior of a bandgap circuit is obtained. Various layouts of the same test circuit have been considered and the effectiveness of shielding substrate contacts is presented
Investigations on the Susceptibility of Smart Power ICs to RFI
This paper deals with the susceptibility to radio frequency interference (RFI) of the analog front-end circuits embedded in smart power integrated circuits (ICs). The parasitic coupling of the power section with the analog and the digital section of these devices through the silicon substrate is discussed referring to a macro model, then the causes of RFI demodulation in analog front-end circuits are highlighted. In particular, it is shown that the RFI injected in the silicon substrate through the power devices is demodulated by the input stage of the analog front-end embedded in the same silicon die. On the basis of these analysis, a simple method to increase the immunity to RFI is presented and its effectiveness is proved through a set of measurements carried out on a test chip
On the Susceptibility of Chopper Operational Amplifiers to EMI
This paper focuses on the susceptibility to electromagnetic interference (EMI) of chopper operational amplifiers, which are usually preferred to common ones when low-noise and lowoffset features are required. The demodulation of EMI carried out by such devices is investigated analyzing the linear distortion that results from the modulation and the demodulation of the signal to be amplified, as well as the nonlinear distortion of the EMI that mostly takes place in the amplifier's input stage. The analysis is extended to feedback chopper amplifiers, and the conclusions drawn are checked performing several measurements on a test chip designed and fabricated to this purpos
A new nonlinear model of EMI-induced distortion phenomena in feedback CMOS operational amplifier
This paper deals with distortion phenomena induced by radio-frequency interference (RFI) in analog integrated circuits and it concentrates on the effects induced by RFI on the operation of feedback CMOS operational amplifiers (opamps). In particular, the paper describes a new nonlinear model, which makes possible the prediction of upset in the opamp output nominal signal when RFI is superimposed on the input nominal signals. Such a model can be employed when the transistors of the input differential pair are driven by RFI either in strong or weak nonlinear operation. Results of experimental tests performed on a Miller CMOS opamp connected in the voltage follower configuration are presented and compared with model predictions
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