1,721,026 research outputs found
Analysis of SET propagation in Flash-based FPGAs by means of electrical pulse injection
No full textAdvanced digital circuits are increasingly sensitive to single event transients (SETs) phenomena. Technology scaling has resulted in a greater sensitivity to single event effects (SEEs) and more in particular to SET propagation, since transients may be generated and propagated through the circuit logic, leading to behavioral errors of the affected circuit. When circuits are implemented on Flash-based FPGAs, SETs generated in the combinational logic resources are the main source of critical behavior. In this paper, we developed a technique based on electrical pulse injection for the analysis of SETs propagation within logic resources of Flash-based FPGAs. We outline logic schematic that allows the injection of different SET pulses. We performed several experimental analyses. We characterized the basic logic gates used by circuits implemented on Flash-based FPGAs evaluating the effect on logic-chains of real lengths. Additionally, we performed an effective analysis evaluating the SET propagation through microprocessor logic paths. Results demonstrated the possibility of mitigating SET-broadening effects by acting on physical place and route constraint
Alpha-induced soft errors in Floating Gate flash memories
No full textWe study the sensitivity to alpha particles of state-of-the-art Multi-Level Cell (MLC) and Single-Level Cell (SLC) NAND Floating Gate (FG) flash memories with NAND architecture. We show that starting from a feature size of 50 nm, MLC flash memories are sensitive to alpha particles, whereas SLC devices do not show any sensitivity down to a feature size of 34 nm. We calculate the alpha-induced soft error rates on the field, discuss technology trends in comparison to heavy-ions
Single Event Effects in 3D NAND Flash Memory Cells with Replacement Gate Technology
Get PDFWe studied the heavy-ion single event effect response of 3D NAND Flash memory cells with charge-trap based replacement gate technology. Error cross sections, threshold voltage shifts, and underlying mechanisms are discussed. The behavior of replacement gate cells is compared with previous generations of Flash NAND memory cells with floating gate architecture, both planar and 3D. The cell array structure, the technology parameters, and the materials impacting on radiation susceptibility of the different types of cells are discussed
Secondary Particles Generated by Protons in 3D NAND Flash Memories
No full textWe studied the secondary byproducts created by high-energy protons inside an SEU detector based on 3D NAND Flash memories, extending the previously developed methodology used for detecting heavy ions. The radiation response of the SEU monitor was discussed as a function of proton energy, analyzing parameters such as the number of clusters per particle, the cluster size, and the angle of the generated secondaries. The results provide interesting insight into the nuclear reactions occurring in state-of-the-art electronic chips, in addition to showing the usefulness of 3D NAND Flash memories for monitoring proton beams
A Heavy-Ion Beam Monitor Based on 3-D NAND Flash Memories
No full textA heavy-ion beam monitor based on 3-D NAND flash memories was designed and tested with heavy ions at high energy and low linear energy transfer (LET). The capability of measuring fluence, angle, uniformity, and LET of impinging particles is discussed, together with the advantages over SRAM-based implementations. We propose ad hoc algorithms for the extraction of the beam parameters, based only on user-mode commands. A validation of the system using low-LET ionizing particles impinging at different angles is presented. Experimental results show very good efficiency and accuracy
Towards the Use of Artificial Intelligence on the Edge in Space Systems: Challenges and Opportunities
No full textThe market for remote sensing space-based applications is fundamentally limited by up- and downlink bandwidth and onboard compute capability for space data handling systems. This article details how the compute capability on these platforms can be vastly increased by leveraging emerging commercial off-the-shelf (COTS) system-on-chip (SoC) technologies. The orders of magnitude increase in processing power can then be applied to consuming data at source rather than on the ground allowing the deployment of value-added applications in space, which consume a tiny fraction of the downlink bandwidth that would be otherwise required. The proposed solution has the potential to revolutionize Earth observation (EO) and other remote sensing applications, reducing the time and cost to deploy new added value services to space by a great extent compared with the state of the art. This article also reports the first results in radiation tolerance and power/performance of these COTS SoCs for space-based applications and maps the trajectory toward low Earth orbit trials and the complete life-cycle for space-based artificial intelligence classifiers on orbital platforms and spacecraft
Energy Deposition by Ultrahigh Energy Ions in Large and Small Sensitive Volumes
No full textThe deposition of energy in large and small sensitive volumes is studied after ultrahigh energy heavy-ion irradiation. We demonstrate that the energy deposition increase effect previously reported in p-i-n diode detectors due to delta electrons occurs only in large sensitive volumes, but not in small ones, typical of advanced microelectronic devices, such as the cells of a 3-D NAND Flash memories. We attribute this effect to the trajectories of the secondary electrons
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