1,721,024 research outputs found
"A Baseline Holder for CMOS Readout Circuits with Feedback Extension to the Charge preamplifier"
No full textArchaeological Museum of Verona: Analysis of Bronze Sculptures from Various Periods - Analysis: Technical data
No full textA 8-channels low-noise CMOS readout circuit for silicon detectors with on-chip front-end JFET
No full textWe propose a CMOS circuit designed to be used with Silicon Drift Detectors (SDDs) coupled to scintillators for gamma-ray imaging applications. The circuit is composed by 8 analog channels, each including a low-noise preamplifier, a 6(th) order semigaussian shaping amplifier with four selectable peaking times from 1.8 mu s up to 6 mu s, a peak stretcher and a baseline holder. The integrated time constant used for the shaping are implemented by means of a recently proposed 'RC' cell. This cell is based on the de-magnification of the current flowing in a resistor R by means of the use of current mirrors. The 8 analog channels of the chip are multiplexed to a single analog output. A suitable digital section provides self-resetting of the channels, trigger output and the programming of independent threshold on the analog channels by means of a programmable serial register and 3bit DACs. In this work, the main features of the circuit are first presented. The experimental results obtained in the characterization of the prototype are then reported and discussed. The energy resolution measured using a single channel of the chip with a Silicon Drift Detector Droplet (SDD3) is Of 128eV at 6keV with the detector cooled at -20 degrees C
"A CMOS circuit for high-stability X-ray Spectroscopy with Silicon Drift Detectors with on-chip JFET".
No full textA CMOS charge preamplifier for silicon drift detectors with on-chip JFET and feedback capacitor
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Fast and reliable closed-loop wafer-level measurement of gyroscopes drive quality factor
No full text"The SIDDHARTA chip: a CMOS multi-channel circuit for Silicon Drift Detectors Readout in Exotic Atoms Research"
No full text“CUBE”, A low-noise CMOS preamplifier as alternative to JFET front-end for high-count rate spectroscopy
No full textWe present a monolithic CMOS charge preamplifier named “CUBE”. It is specifically designed to be used with Silicon Drift Detectors (SDD). We will show that the use a MOSFET as input transistor allows superior noise performances at very short shaping times respect to the state-of-the-art externally connected JFET devices. We will show the achievable energy resolutions using a 10mm2 reference SDD with different count-rates and with different analog and digital commercial filters. A state-of-the-art energy resolution (for a silicon detector) of 125 eV at 6 keV has been achieved with the optimum shaping time. Moreover, it will be shown that CUBE enables the use of an extremely fast-peaking time of only 100 ns with extraordinary good energy resolution of 149 eV. As a consequence we can state that, the CUBE preamplifier is very well suited for high count-rate spectroscopy applications. An example of the performance with output countrate up to 490 kcps will be reported
Snapshot of a final bronze age metal worket: archaeometallurgical study of the cache and the working tools from Chiusa di Pesio, Cuneo, Italy
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