1,721,217 research outputs found
Effects of Melt Composition On Structural and Electrical Characteristics of Lec Si-doped Gallium-arsenide
Vorrichtung und Verfahren zur Züchtung von III-Nitrid Volumenkristallen
An assembly to grow III-nitride-volume
crystals consists of a heat source (16)
surrounding a quartz cylinder (17) within
which a vertical reactor (100) is located.
The vertical reactor has an evaporation
cell (200) and a rotating substrate (5) in a
holder (9). The vertical reactor has
process gas feed ducts (3, 6). A
macerating gas outlet (7) is located either
above or below the substrate and a metal
vapour (201) outlet (40). The macerating
agent reaches the substrate vertically via
the gas outlet (7). The metal vapour
reaches the substrate via the vapour
outlet. Further claimed is a crystal
growing process for III-Nitride-Volume
crystals
Optimal-growth Conditions and Main Features of Gaas Single-crystals For Solar-cell Technology - A Review
Procedimento per la produzione di fette di InP drogato Ferro con caratteristiche semi-isolanti
Influence of Iron Content On Electrical Characteristics and Thermal-stability of Lec Indium-phosphide
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