1,721,004 research outputs found
Reliability of compound semiconductor devices
No full textThis paper reviews the reliability of III-V semiconductor devices with particular attention to the failure mechanisms typical of these structures
Failures of ALGaAs/GaAs HEMTs induced by hot electrons
No full textWe present in this work the rapid and irreversible degradation of electrical characteristics induced by hot electrons in unpassivated AlGaAs/GaAs HEMTs. When devices are biased at high drain-source voltages carriers can reach high energies and give rise to impact ionization phenomena. Devices biased in these conditions show a decrease of drain current, an increase of parasitic drain resistance and an increase of transconductance frequency dispersion. Degradation has been found proportional to the maximum electric field in the channel. Results suggest that hot electrons generate deep levels in the access region between gate and drain contacts possibly at the interfaces between the semiconductor layers in the gate-drain region
Electron Detrapping Enhanced By Electric-field In Algaas Gaas Hemts
No full textA remarkable enhancement by electric field of the detrapping time of electrons from deep donor levels, probably associated with DX centres in the AlGaAs layer, has been directly observed at room temperature in an AlGaAs/GaAs HEMT, whose performance results show to be a function of bias conditions. In particular, detrapping time decreases by one order of magnitude on increasing VDS from 0.5 V to 5 V, moving device response from the linear to the strongly saturated region
Charge diffusion and reciprocity theorems: A direct approach to EBIC of ridge laser diodes
No full textLife tests and field results of GaAs FETs.
No full textThe overall workplan for assuring the reliability of GaAs MESFETS is presented, as a result of 10 years of industrial experience. The importance of an accurate evaluation of failure mechanisms and acceleration factors is pointed out, describing problems and criticalities related to the reliability testing and the failure analysis of this kind of devices
Hot-electron Induced Degradation In AlGaAs/GaAs HEMTs
No full textWe present the first data on rapid degradation of electrical characteristics induced by hot electrons in AlGaAs/GaAs HEMTs. Degradation can be attributed to deep levels generated in the access region between gate and drain contacts possibly at the interfaces between GaAs cap layer and SiN passivation and/or the semiconductor layers in the gate-drain region
Correlation between thermal resistance, channel temperature, infrared thermal maps and failure mechanisms in low power MESFET devices
No full textChannel temperature Tch of GaAs MESFETs, determined by means of electrical measurements (ΔVgs), has been compared and correlated with thermal maps obtained by high resolution infrared microscopy. Results show that in low power devices with a small number of gates, the value of Tch derived from ΔVgs measurements is close to the maximum values of temperature measured on the hottest junctions on the chip. Local thermal inhomogeneities, in particular those observed in devices characterized by high values of Rth, can explain and confirm results of failure analyses of MESFETs submitted to accelerated life tests in operating conditions where degradation phenomena occur in localized areas of the device
Reliability issues of discrete FETs and HEMTs
No full textThis chapter summarizes results concerning failure modes and mechanisms observed during reliability evaluation tests on both power GaAs MESFETS and low-noise GaAs-based MESFETS and HEMTS, with particular emphasis on the results obtained on commercially available devices of different manufacturer
Reliability evaluation of plastic packaged devices for long life applications by THB test
No full textThe reliability of transistors, bipolar and CMOS integrated circuits encapsulated in different types of plastic packages was investigated by using the 85°C/85%R.H. test with applied bias and thr results compared with a long term operating life test
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