4 research outputs found
Oxidation Resistance of TaSiN Diffusion Barriers for Stacked Capacitors
No full textAbstractDue to its resistance to oxidation, TaSiN is a promising candidate as an electrically conductive barrier layer for integration of high permittivity oxides in advanced memory devices. In this study we report on the properties and the resistance to oxidation of TaSiN thin films deposited by reactive magnetron sputtering and processed by rapid thermal annealing (RTA) in 18O2 at 650°C. In order to determine the composition, RBS (Rutherford Backscattering Spectroscopy) and NRA (Nuclear Reaction Analysis) techniques have been used. 18O depth profile concentrations were measured after RTA using the narrow (fwhm=100eV) resonance at 151 keV in the nuclear reaction 18O(p,α)15N.</jats:p
TaSiN diffusion barriers deposited by reactive magnetron sputtering
No full textInternational audienceDue to its resistance to oxidation, TaSiN is a promising candidate as an electrically conductive barrier layer for integration of high permittivity oxides in advanced memory devices. In this study we report on the properties of TaSiN thin films deposited by reactive magnetron sputtering of a TaSi2 target in an Ar/N-2 atmosphere. We especially focus on the influence of deposition parameters (pressure and power density) on TaSiN film properties. To study oxidation resistance, films are processed by rapid thermal annealing in O-18(2) at 650 degrees C. The concentration depth profiles of O-18 were measured via the narrow resonance of O-18(p,alpha)N-15 at 151 keV (FWHM = 100 eV). Whatever the power density, films deposited above 2 Pa are porous and exhibit high resistivity. Ta26Si47N27 deposited at 0.5 Pa with a power density of 2.65 W/cm(2) exhibits high density, low resistivity, and good oxidation resistance. (c) 2006 Elsevier B.V. All rights reserved
Study of poly-Si/TaSiN/Pt structure for stacked capacitors
No full textABSTRACTDue to its high oxidation resistance, TaSiN is a promising candidate as an electrically conductive barrier layer for integration of high permittivity oxides in advanced memory devices. In this work, we report on the properties of TaSiN thin films deposited by reactive magnetron sputtering of a TaSi2 target. We have mainly studied the influence of deposition pressure and power density on film properties (composition, density, resistivity). The oxidation resistance of TaSiN films has been investigated at typical conditions for crystallization of perovskite dielectrics. The as-deposited and annealed samples were characterized using Rutherford backscattering spectroscopy and nuclear reaction analysis for atomic composition and XPS for chemical bonding. To study oxidation resistance, films have been processed in 18O2. The concentration depth profiles of 18O was measured after thermal treatments via the narrow resonances of 18O(p,α)15N at 151 keV (fwhm=100eV). The different results suggest that a pressure of 0.5 Pa, a power density of 2.63W/cm2 and a gas flow ratio N2/Ar of 5% allow to perform TaSiN films with high density, low resistivity and good oxidation resistance.</jats:p
Narrow Resonance Profiling Study of the Oxidation of Ti<sub>1-x</sub>AL<sub>x</sub>N Barrier Layer
No full textAbstractThe preparation of ferroelectric and high dielectric perovskite materials, which is performed at high temperature (550–750°C) in oxidizing environments, provides strong limitations on the choice of electrode materials which have to be used for integration with semiconductor devices. To minimize interdiffusion and oxidation reactions, a diffusion barrier must be placed between Si substrate and electrode material (Pt, lrO2, RuO2.…). Ti1-xAlxN thin films, deposited by reactive sputtering, are promising materials as electrically conductive layers and robust diffusion barriers. The stability of these films has been investigated at conditions typically used for crystallization of perovskite dielectrics. Films with various Al composition (x=0, 0.1, 0.2 and 0.4) have therefore been annealed by RTA (rapid thermal annealing) in 18O2 at 550–750°C. The concentration depth profiles of both 18O and 27A1 were measured before and after the RTA treatments via the narrow resonances of 18O(p,α)15N at 151 keV (fwhm=100 eV) and 27Al(p,γ)28Si at 992 keV (fwhm=100 eV). Al incorporation in the films reduces oxide growth especially at high annealing temperatures. The Al excitation curves indicate a uniform Al content for as deposited Ti1−xAlxN, and reveal Al diffusion to the surface during oxidation which indicates the formation of an Al rich oxide layer at the Ti1-xAlxN surface.</jats:p
