188 research outputs found

    Solution-processed thin films for electronics from single-walled carbon nanotubes and graphene:

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    Single-walled carbon nanotubes (SWNTs) and graphene are sp2 hybridized carbon nanostructures which exhibit extraordinary electronic properties arising from their unique energy dispersions and dimensionalities. A major issue preventing implementation of these materials into integrated electronic devices is the absence of large-scale controllable synthesis and subsequent manipulation. To circumvent this issue, solution processing of SWNTs and graphene has been proposed. Deposition of thin film networks allows the realization of a new class of materials that are useful for large-area or “macro-electronics” on flexible and inexpensive platforms. In this thesis, controllable and efficient solution-based deposition of SWNT and graphene thin film networks and their opto-electronic properties are investigated. Topics such as material dynamics in liquid, chemical structures, defects, morphology, and doping are studied utilizing various spectroscopy and microscopy analysis along with complementary electrical measurements. Further insight is provided through demonstrations of proof-of-principle thin film transistors, organic photovoltaics, and field emitters based on solution-processed SWNT and graphene thin films.Ph.D.Includes bibliographical references (p. 134-150)by Goki Ed

    Partially oxidized graphene as a precursor to graphene

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    Solution exfoliation of graphite holds promise for large-scale bulk synthesis of graphene. Non-covalent exfoliation is attractive because the electronic structure of graphene is preserved but the yield is low and the lateral dimensions of the sheets are small. Chemical exfoliation via formation of graphite oxide is a highly versatile and scalable route but the covalent functionalization of graphene with oxygen significantly alters the properties. Here, we report a new method for large-scale facile synthesis of micron-sized partially oxidized graphene (POG) sheets with dramatically improved electronic properties compared to other solution-phase exfoliated graphene. Due to low initial oxygen content (∼12%), POG requires only mild annealing (<300 °C) to achieve a sheet resistance of 28 kΩ sq-1 at the neutrality point, only a factor of ∼4 larger than the intrinsic sheet resistance of pristine graphene (∼6 kΩ sq-1) and substantially lower than graphene exfoliated by other methods. Such a partial oxidation approach opens up new promising routes to solution based high-performance, low temperature, transparent and conducting graphene-based flexible electronics. © 2011 The Royal Society of Chemistry

    LIGHT-MATTER INTERACTION IN 2D SEMICONDUCTORS AND PHOTONIC DEVICE IMPLEMENTATION

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    Ph.DDOCTOR OF PHILOSOPHY (FOS

    MEASURING TIME-RESOLVED POLARISATION-SENSITIVE NONLINEAR PROCESSES IN 2D MATERIALS

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    Master'sMASTER OF SCIENCE (RSH-FOS

    PHONONS AND EXCITONS IN 2D TRANSITION METAL DICHALCOGENIDES

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    Ph.DDOCTOR OF PHILOSOPHY (FOS
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