78 research outputs found
The ocean as a space of maturation in Nagai Kafū's critique of modernity
My contribution takes into account Nagai Kafū’s (1879-1959) “foreign” literary output, i.e. the two collections of stories he wrote during and immediately after his sojourn in the United States and France (1903-1908), focusing in particular on some short stories set on board of the vessels that took him from Japan to America, from America to France, and from France to Japan. Japanese literature at the turn of the 20th century consistently thematised the encounter with the “foreign Other” whose presence in the archipelago was felt as increasingly pervasive. The promotion of ryūgaku (studying abroad) enabled wealthy Japanese men to visit countries considered as models of technological and economic advancement to imitate and, possibly, surpass, while people of lower socioeconomic background migrated in search of better life conditions. In both cases, travelling to unknown lands meant confronting with otherness in its most basic yet problematic forms. It was on board of ships, suspended spaces and quintessential non-places, that Japanese from different regions, caste categories, and social classes met, interacted or just ignored each other. Part of the interest of Kafū’s stories of this period lies in their representation of both positions, and of the tensions and interactions between them. In Night Talk in a Cabin (1904), a young man full of doubts and expectations meets two Japanese men with utterly different stories; textual analysis of this work will show how the author stages an oblique representation of a set of possible futures for his own self, a mis-en-scène that can only take place on a ship, with the endlessness of the ocean symbolising the openness of the narrator’s destiny. The protagonist of A June Night’s Dream (1907) is sailing to France when he is reminded of the woman he has just left; besides this heart-wrenching love story, the main interest of the text lies in the figuration of the I-narrator as a cosmopolitan who, after four years in the United States, feels more American than Japanese, and scrutinises Japanese modernisation stressing its fallacies and incongruities: throughout his sojourn, Kafū had occupied an in-between position which is rendered effectively in this deployment of the ocean as the spatial setting for multiple meditations about life and society. Mediterranean Twilight (1908), Desert (1908), and Bad Feeling (1909), all included in the French collection, re-enact Kafū’s crossing to Japan and resume his critique of Meiji modernisation framing it into the geographical landmarks he comes across during his trip, with the ocean becoming the textual fabric itself. My contribution aims to demonstrate to what extent, in this author’s literature, the sea engenders stories and fosters reflections, serving as a veritable function of his critique of the modern condition and of the articulation of an atypical Bildungsroman narrative
Open learning for an open world: Reflections on open and distance learning and teaching at the Open Polytechnic of New Zealand.
Foreword / Caroline Seelig -- Contributors -- Introduction / Jonathan Barrett -- Distance Education at the Open Polytechnic: The ?Institutional? Approach / Mark Nichols -- Instructional Design: Theory and Practice / Polly Kobeleva and Luke Strongman -- Research at the Open Polytechnic / Luke Strongman and Raymond Young, with Polly Kobeleva -- Introducing Augmented Reality Imaging into Paper-based Learning Materials for Engineering Trade Students / Gary Mersham and Sandra Maathuis-Smith -- Case Study: Developing an Automatic Grader of Advanced Office Skills / Zlatko Kovacic -- Case Study: Second Life Education New Zealand Project / John Green -- Case Study: Applying Real-time Assessment to Unit Standards / Brian Pascall -- Experiences of Teaching Faculty Enrolled in the Open Polytechnic of New Zealand?s Certificate in Designing and Facilitating E-learning / Rick Fisher, George Chipindiku and Sandra Maathuis-Smith -- Case study: Teaching Practices Discussion Group / Puvana Natanasabapathy -- Enhancing the Engagement and Success of Distance Students through Targeted Support Programmes / Ron Grant, Glenda Olivier, Caroline Rawlings and Catherine Ross -- Engaging Distance Students in Learning: What Matters to Students, What Motivates Them and How Can Engagement in Learning Be Fostered? / Catherine Ross -- Retention: A Critical Issue for Open and Distance Learning / Josephine Bourke, with Mark Nichols, John Veal, Les Morris, and Ken Marshall -- Student Use of Sources: A Collaborative Investigation of Resource Use in Psychology Assignments / Estelle Barnard and Nancy Evans Weaver -- Case study: Student Engagement and Library Use / Philip Clarke -- Open and Flexible Technical and Vocational Education and Training in Commonwealth Pacific Countries / Terry Neal -- Sustainability in Education: Is Distance Learning an Answer? / Josephine Bourke and Ormond Simpson -- Articulating E-pedagogy for Education / Mark Nichol
О ПРИРОДЕ ТЕРМОАКЦЕПТОРОВ В ОБЛУЧЕННОМ ЭЛЕКТРОНАМИ ВЫСОКООМНОМ КРЕМНИИ
This work is an analysis of the possible role of deep acceptor centers in silicon in the formation of the experimentally observed thermal acceptor effect consisting in the change from n to p conductivity type after annealing of electron or neutron irradiated high resistivity silicon. Based on the solution of the electrical negativity equation for compensated silicon we have estimated the dependence of the concentration of deep acceptor centers that is required for changing to p−type conductivity on acceptor energy level and shallow donor concentration. We show that deep acceptor centers can make a significant contribution to the thermal acceptor effect in high resistivity silicon (energy levels of up to 0.4 eV). The concentrations of deep acceptor centers required for changing the conductivity type are of the order of 1012— 1014 cm−3. These concentrations seem to be achievable in samples containing low shallow donor concentrations (1012—1013 cm−3). Such centers can be divacancy−impurity complexes (Fe, P) with ionization energies of up to 0.34 eV. The thermal activation of interstitial boron is not excluded either.
Instructional design: Theory and practice.
Describes, using a pedagogical focus, the principles of instructional design in distance learning teaching. The paper comprises five sections. The first section provides definitions and describes concepts of instructional design. In the second section the authors investigate the nature of instructional design. The third section concerns the integration of teaching pedagogy with instructional design. The fourth section describes elements of project management and instructional design. A mini case study that discusses the embedding of literacy and numeracy in an Open Polytechnic Level 2 Horticulture course is included. The fifth section discusses e-learning pedagogy and instructional design
Определение отклонения от стехиометрии в широкозонных полупроводниковых соединений АIIВVI по составу равновесной паровой фазы
A method of determining stoichiometry deviation in cadmium and zinc chalcogenides that is based on the temperature dependence of the ratio of components partial pressures during evaporation of solid compounds in a limited volume has been suggested. The new method differs from methods implying the collection of excessive component during evaporation in large volumes. The method includes measuring vapor phase components partial pressures during material heating to above 800 K, solving a set of material balance equations and the electric neutrality equation, and calculating the stoichiometry deviation in the initial compound at room temperature. Intrinsic point defect concentrations are calculated using the method of quasichemical reactions. The independent variables in the set of equations are the sought stoichiometry deviation, the partial pressure of the metal and the concentration of free electrons. We show that the parameter of the material balance equation which determines the method’s sensitivity to stoichiometry deviation, i.e., the volume ratio of vapor and solid phases, can be considered constant during heating and evaporation unless this parameter exceeds 50. If the partial pressure is measured based on the optical density of the vapors, then the sensitivity of the method can be increased to not worse than 10-6 at.%.Предложен метод определения отклонения от стехиометрии в халькогенидах кадмия и цинка, основанный на анализе температурной зависимости отношения парциальных давлений компонентов при испарении твердого соединения в ограниченный объем, что отличает его от методов сбора избыточного компонента при испарении в большие объемы. Метод основан на измерении парциальных давлений компонентов паровой фазы при нагреве материала до температур выше 800 К и на последующем решении системы уравнений материального баланса и уравнения электронейтральности для расчета исходного отклонения от стехиометрии в соединении при комнатной температуре. Концентрации собственных точечных дефектов рассчитывают методом квазихимических реакций. Независимыми переменными в системе уравнений являются искомое отклонение от стехиометрии, парциальное давление металла и концентрация свободных электронов. Показано, что в уравнении материального баланса параметр, определяющий чувствительность метода по отклонению от стехиометрии — отношение объемов паровой и твердой фаз, можно считать постоянным при нагреве и испарении, если он не превышает 50. Если парциальные давления измерять по оптической плотности паров, чувствительность метода может быть не хуже 10-6 % (ат.)
СТАТИСТИЧЕСКИЙ АНАЛИЗ ВЛИЯНИЯ Ge НА РАДИАЦИОННУЮ И ТЕРМИЧЕСКУЮ СТАБИЛЬНОСТЬ ЭЛЕКТРОФИЗИЧЕСКИХ ХАРАКТЕРИСТИК ПРИБОРНЫХ n—p—n—p–СТРУКТУР НА ОСНОВЕ CZ–Si
The characteristics of low−power and high−power thyristors basen of dislocation−free single crystal silicon doped with ger- manium to the concentration range NGe ~ (0.05—1.5) • 1020 cm−3 have been investigated. The criterial parameters of thyristors exposed to radiation and high temperature gradients have been estimated using experimental data processing methods in the STATISTICA and MathCAD environments. We show the appropriateness of using germanium doped silicon for increasing the thermal stability and radiation strength of the devices exposed to γ−radiation in the range of doses of up to 2.94 • 106 mSv.Исследованы характеристики мало- мощных и силовых тиристоров на основе бездислокационных монокристаллов кремния, легированных германием в диапазоне концентраций NGe ~ (0,05÷1,5) ⋅ 1020 см−3. С использованием методов обработки экспериментальных данных в среде STATISTICA и MathCAD оценены критериальные параметры тиристоров при действии облучения и высоких температурных градиентов. Показана целесообразность использования кремния, легированного германием, для повышения термической стабильности и радиационной стойкости приборов, подвергнутых действию γ−облучения в диапазоне доз до 2,94⋅ 106 мЗв.
Erratum: Truncating Mutations in UBAP1 Cause Hereditary Spastic Paraplegia (The American Journal of Human Genetics (2019) 104(4) (767–773), (S0002929719300977), (10.1016/j.ajhg.2019.03.001))
(The American Journal of Human Genetics 104, 767–773; April 4, 2019) In the originally published version of this article, authors Ivailo Tournev and Teodora Chamova were mistakenly omitted from the author list. Their names have been added here. The online version of the full article now appears correctly and includes affiliations for the added authors as well as corrections to some of the other affiliations. The authors regret these omissions
MIXING OF FERMION FIELDS OF OPPOSITE PARITIES AND BARYON RESONANCES
We consider a loop mixing of two fermion fields of opposite parities whereas the parity is conserved in Lagrangian. Such kind of mixing is specific for fermions and has no analogy in boson case. Possible applications of this effect may be related with physics of baryon resonances. The obtained matrix propagator defines a pair of unitary partial amplitudes which describe the production of resonances of spin J and different parity 1/2± or 3/2±. The use of our amplitudes for joint description of πN partial waves P13 and D13 shows that the discussed effect is clearly seen in these partial waves as the specific form of interference between resonance and background. Another interesting application of this effect may be related with partial waves S11 and P11, where the picture is more complicated due to presence of several resonance states. </jats:p
Анализ диффузионных профилей фосфора в легированном галлием германии методом координатно-зависимой диффузии
The phosphorus concentration profiles in germanium in In0,01Ga0,99As/In0,56Ga0,44P/Ge heterostructures with gallium co-diffusion, that were obtained during first cascade of a multicascade solar cell formation were analyzed. The diffusion of phosphorus took place from the layer In0,56Ga0,44P together with the diffusion of gallium in a strongly gallium-doped germanium substrate, which determined the features of the diffusion process. First of all, co-diffusion of gallium and phosphorus leads to formation of two p—n junctions. Fick’s laws cannot be used for diffusion description. Distribution of the P diffusivity (DP) in the depth of the sample was determined by two methods —Boltzmann—Matano (version of Sauer—Freise) and the coordinate-dependent diffusion method. It is shown that when we have used the coordinate-dependent diffusion method, the DP values are more consistent with the known literature data due to taking into account the drift component of diffusion. The tendency of DP to increase at the heterostructure boundary and to decrease at approaching to the main p—n junction is observed for both calculation methods. DP increase in the near-surface region of the p—n-junction, whose field is directed to the interface of the heterostructure, and the decrease in the region of the main p-n junction, whose field is directed in the opposite direction, as well as the observed growth of DP with the electron concentration, leads to the conclusion that diffusion in this case takes place as the part of negatively charged VGeP complexes, as in the case of P diffusion alone.В связи с развитием технологии многокаскадных солнечных элементов (МК СЭ) возрос интерес к германию как к подложке и материалу первого каскада МК СЭ на основе соединений АIIIВV. Фосфор и галлий являются основными легирующими элементами в германии, поэтому интерес к процессам их диффузии проявлялся с момента начала разработок технологии изготовления p—n-переходов в германии. Дан анализ профилей распределения фосфора в германии в структуре In0,01Ga0,99As/In0,56Ga0,44P/Ge в условиях содиффузии с галлием, полученные при формировании первого каскада МК СЭ. Диффузия фосфора проходила из слоя In0,56Ga0,44P вместе с диффузией галлия в сильно легированную галлием подложку германия, что определило особенности процесса диффузии. В первую очередь совместная диффузия галлия и фосфора приводит к формированию не одного, а двух p—n-переходов. Диффузионные профили фосфора не могут быть описаны законами Фика. Распределение коэффициента диффузии фосфора DP по глубине образца определяли двумя методами: Больцмана—Матано в варианте Зауэра—Фрейзе и методом координатно-зависимой диффузии. Показано, что учет дрейфовой компоненты в методе координатно-зависимой диффузии дает значения DP, более соответствующие известным литературным данным. Тенденция увеличения DP у границы гетероструктуры и уменьшения при приближении к основному переходу наблюдается для обоих методов расчета. Поле приповерхностного p—n-перехода, направлено к границе раздела гетероструктуры, а поле основного p—n-перехода — в противоположную сторону, также, как и наблюдаемый рост DP с концентрацией электронов. Увеличение DP в области приповерхностного p—n-перехода и уменьшение в области основного p—n-перехода позволяют сделать вывод, что диффузия в гетероструктуре идет в составе отрицательно заряженных комплексов VGeP, как и в случае диффузии одного компонента
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