1,721,016 research outputs found
Variation of Electrostatic Coupling and Investigation of Current Percolation Paths in Nanocrystalline Silicon Cross Transistors
Nanocrystalline silicon thin films are promising materials for the development of advanced Large Scale Integration compatible quantum-dot and single-electron charging devices. The films consist of nanometer-scale grains of crystalline silicon, separated by amorphous silicon or silicon dioxide grain boundaries up to a few nanometer thick. These films have been used to fabricate single-electron transistor and memory devices, where the grains form single-electron charging islands isolated by tunnel barriers formed by the grain boundaries. The grain boundary tunnel barrier isolating the grains is also of great importance, as this determines the extent of the electrostatic and tunnel coupling between different grains. These effects can lead to the nanocrystalline silicon thin film behaving as a system of coupled quantum dots.& more..
Identifying single-electron charging islands in a two-dimensional network of nanocrystalline silicon grains using Coulomb oscillation fingerprints
Observation of interdot coupling phenomena in nanocrystalline silicon point-contact structures
Coherent States in a Coupled Quantum Dot Nanocrystalline Silicon Transistor
06/05/14 MEB. publisher PDF, OK to add
Intergrain coupling effects on Coulomb oscillations in dual-gated nanocrystalline silicon point-contact transistor
Observation of Interdot Coupling Phenomena in Nanocrystalline Silicon Point-Contact Structure
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