173 research outputs found
Chip scale monolithic integration of inductive and capacitive components by self-rolled-up membrane nanotechnology
No full textThis work reports a three-dimensional (3D) microwave L-C filter network enabled by a CMOS-compatible two-dimensional (2D) fabrication approach, which combines inductive (L) and capacitive (C) self-rolled-up membrane (S-RuM) components monolithically into a single L-C network structure, thereby greatly reducing the on-chip area footprint. The individual L-C elements are fabricated in-plane using standard semiconductor processing techniques, and subsequently triggered by the built-in stress to self-assemble and roll into cylindrical air-core architectures. By designing the planar structure geometry and constituent layer properties to achieve a specific number of turns with a desired inner diameter when the device is rolled up, the electrical characteristics can be engineered. The network layouts of the L and C components are also reconfigurable by selecting appropriate input, output, and ground contact routing topographies. The devices demonstrated here operate over the range of ~1-10 GHz. Their area and volume footprints are 0.095 mm2 and 0.01 mm3, respectively, which are ~10× smaller than most of the comparable conventional filter designs. These S-RuM-enabled 3D microtubular L-C filter networks represent a significant advancement for miniaturization and integration of RF devices for applications in mobile connectivity.Submission published under a 24 month embargo labeled 'Closed Access', the embargo will last until 2022-12-01The student, Zhendong Yang, accepted the attached license on 2020-11-25 at 10:23.The student, Zhendong Yang, submitted this Thesis for approval on 2020-11-25 at 10:32.This Thesis was approved for publication on 2020-12-01 at 17:24.DSpace SAF Submission Ingestion Package generated from Vireo submission #15960 on 2021-03-04 at 16:32:27Made available in DSpace on 2021-03-05T21:45:37Z (GMT). No. of bitstreams: 5
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LICENSE.txt: 4210 bytes, checksum: e538cfdfccdfbcc0183508254d380a0c (MD5)
Previous issue date: 2020-12-01Embargo set by: Seth Robbins for item 117307
Lift date: 2023-03-05T21:45:47Z
Reason: Author requested closed access (OA after 2yrs) in Vireo ETD systemEmbargo set by: Seth Robbins for item 117307
Lift date: 2023-03-05T21:47:41Z
Reason: Author requested closed access (OA after 2yrs) in Vireo ETD systemAuthor requested closed access (OA after 2yrs) in Vireo ETD systemLimite
On-chip self-rolled-up nanomembrane tube inductor for RFIC performance enhancement
No full textMiniaturization of the commonly used on-chip lumped spiral inductor is highly desirable to reduce the fabrication cost and enhance the performance and functionality of radio frequency integrated circuits (RFICs). Numerous improvement methods have been demonstrated but all fail to fundamentally solve the intrinsic drawbacks of planar spiral structure, especially the most critical issue – substrate effects. A new design concept based on self-rolled-up nanomembrane nanotechnology that “processes like 2D and functions like 3D” is proposed and demonstrated. This thesis shows a global solution to obtain a lumped inductor with extremely small on-chip footprint and immunity to substrate effects. Experimental realization of self-rolled-up inductors shows a footprint two orders of magnitude smaller than that of the planar spiral inductors, with excellent quality factor (Q) and much higher operating frequency than the 2D counterparts in both capabilities.Item withdrawn by Laura Spradlin ([email protected]) on 2014-07-08T13:02:07Z
Item was in collections:
University of Illinois Theses & Dissertations (ID: 1)
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Huang_Wen.docx: 4165107 bytes, checksum: 271a854c356cad44bf19e49bb6796559 (MD5)
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license.txt: 4059 bytes, checksum: 3cdecbe530105bb16d1ee26d34ddce68 (MD5)Embargo set by: Seth Robbins for item 50467
Lift date: 2016-09-16T17:13:01Z
Reason: Author requested closed access (OA after 2yrs) in Vireo ETD systemLimited Restriction Lifted for Item 50467 on 2016-09-22T20:59:11Z
Oubliez-moi
No full texteditorial reviewedNée en 1912, Qian Xiuling, par admiration pour Marie Curie, quitte la Chine à l'âge de 17 ans et obtient un double doctorat en physique et chimie à l'Université de Louvain. Elle
y rompt avec le fiancé qu'on veut lui imposer pour épouser un médecin d'origine gréco-russe, Grégoire de Perlinghi. L'invasion japonaise coupe court à leur projet de s'établir en Chine. Ils s'installent à Herbeumont, ù la guerre les surprend. Qian Xiuling va sauver la vie de plus de cent otages, de la région et surtout d'Ecaussinnes, en allant plaider leur cause auprès du général von Falkenhausen, gouverneur militaire de la Belgique. Décorée à la Libération, elle va risquer sa réputation en défendant von Falkenhausen devant le Conseil de Guerre, lui évitant la condamnation à mort.
Qian Xiuling ne connaîtra jamais la carrière scientifique qu'elle ambitionnait, mais elle ouvrira le plus prestigieux restaurant chinois de Bruxelles.
Son histoire sera portée à l'écran en Chine, dans une série télévisée à succès, hélas très romancée et prenant de nombreuses libertés avec la vérité historique. Un documentaire télévisé lui sera également consacré par sa petite-fille, et un roman chinois la prendra pour personnage
Metal-assisted chemical etching of β-gallium oxide
No full textβ-Ga2O3, with an ultra-wide bandgap (UWB) of ~ 4.6 – 4.9 eV and bulk substrate availability, has drawn enormous interest in the power electronics community. Fabricating high-aspect-ratio β-Ga2O3 3D nanostructures without surface damage is essential for next-generation power electronics. Nonetheless, dry etch typically damages the surface due to high-energy ions, while most wet etching techniques can only produce very limited aspect ratios. In this thesis, β-Ga2O3 fin arrays by inverse metal-assisted chemical etching (MacEtch), under UV light irradiation, with a high aspect ratio and excellent surface quality, are demonstrated. The strongly crystal-orientation-dependent etching behaviors are found and three kinds of vertical structures are formed after the MacEtch process. The Schottky barrier heights (SBHs) between platinum (Pt) and different MacEtch-formed β-Ga2O3 surfaces and sidewalls are found to decrease as the aspect ratio of the β-Ga2O3 structure increases. This behavior is attributed to the varying oxygen composition on the surface after MacEtch, as shown by the XPS and TEM examination. Very little hysteresis has been observed in the capacitance-voltage characteristics of the 3D Pt/ Al2O3/ β-Ga2O3 MOS capacitor structures, and the lowest interface trap density extracted from etched interfaces is only 2.73×1011cm-2-eV-1, which is comparable to that of other published values of unetched β-Ga2O3 surfaces. This confirms that MacEtch is an effective etching method for producing high quality β-Ga2O3 3D structures.Submission published under a 24 month embargo labeled 'U of I Access', the embargo will last until 2021-12-01The student, Hsien-Chih Huang, accepted the attached license on 2019-12-06 at 16:24.The student, Hsien-Chih Huang, submitted this Thesis for approval on 2019-12-06 at 16:30.This Thesis was approved for publication on 2019-12-10 at 13:59.DSpace SAF Submission Ingestion Package generated from Vireo submission #14747 on 2020-02-28 at 17:23:52Made available in DSpace on 2020-03-02T22:15:15Z (GMT). No. of bitstreams: 2
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Previous issue date: 2019-12-10Embargo set by: Seth Robbins for item 113924
Lift date: 2022-03-02T22:15:21Z
Reason: Author requested U of Illinois access only (OA after 2yrs) in Vireo ETD systemEmbargo set by: Seth Robbins for item 113924
Lift date: 2022-03-02T22:18:25Z
Reason: Author requested U of Illinois access only (OA after 2yrs) in Vireo ETD systemU of I Only Restriction Lifted for Item 113924 on 2022-03-03T10:15:27Z
Metal-assisted chemical etching of III-V semiconductors for advanced optoelectronic device fabrication
No full textThe development of high-performance electronics in the past few decades has necessitated the scaling and precise fabrication of device elements and features down to the nanometer level. Top-down fabrication modules in semiconductor processing including etching have been extensively explored and implemented for a wide variety of device structures. One of the most novel techniques for etching semiconductors is metal-assisted chemical etching (MacEtch), a plasma-free wet etching method that utilizes a metal catalyst in order to enhance directional etching of a semiconductor. MacEtch has found its place in etching a wide variety of semiconductor materials, which expands its application beyond Si including direct band gap materials for optoelectronics and photonics. However, MacEtch of InGaAsP, an important quaternary semiconductor for long wavelength communications, is yet to be reported. This thesis demonstrates the fabrication of InGaAsP gratings for distributed feedback (DFB) lasers by MacEtch as well as antireflection textured GaAs photodiodes incorporating graphene quantum dots (GQDs). MacEtch behavior of InGaAsP in H2SO4 and H2O2 is dependent on the crystal orientation and material of the metal catalyst, as well as the stoichiometric composition of InGaAsP. The textured GaAs photodiodes, with GQDs self‐embedded in the monolithically integrated transparent graphene electrode, demonstrate a photocurrent enhancement of 22 times and a photoresponsivity of 25 times compared with the planar counterpart.Submission published under a 24 month embargo labeled 'Closed Access', the embargo will last until 2023-05-01The student, Shunya Namiki, accepted the attached license on 2021-04-22 at 17:07.The student, Shunya Namiki, submitted this Thesis for approval on 2021-04-22 at 17:24.This Thesis was approved for publication on 2021-04-26 at 13:43.DSpace SAF Submission Ingestion Package generated from Vireo submission #16514 on 2021-09-16 at 20:13:59Made available in DSpace on 2021-09-17T04:06:51Z (GMT). No. of bitstreams: 3
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LICENSE.txt: 4210 bytes, checksum: c1238af6069b53d24f051376a99d8042 (MD5)
Previous issue date: 2021-04-26Embargo set by: Seth Robbins for item 118696
Lift date: 2023-09-17T04:07:01Z
Reason: Author requested closed access (OA after 2yrs) in Vireo ETD systemAuthor requested closed access (OA after 2yrs) in Vireo ETD systemLimite
Biocompatible silicon nitride thin films for self-rolled-up microtube technologies: guiding neurons
No full textThis thesis presents the evolution and optimization of a self-rolled-up membrane (s-RUM) that is not only insulating, but transparent and biocompatible, allowing it to be integrated into conductance, photonics, and strain-based sensor systems. These microtube-forming membranes are easily fabricated and can be integrated into a microfluidic channel (or become the channel itself) which can be easily integrated into an intravenous or catheter tube for diagnostics. Taking advantage of SiNx’s insulting properties allows conductance-based biosensors to be integrated into the same channel as a surface-enhanced Raman spectroscopy (SERS) sensor. Further, analyte size exclusion is possible via diameter variation and surface functionalization, adding another degree of precision. Extending this platform beyond sensing to cellular growth guidance, we find properties unique to this material system and superior to existing platforms. The SiNx s-RUM platform can be used for applications from sensing to culturing, from disposable electronics to implants, and from brain-computer interfaces to stem-cell functionalized stints.Item withdrawn by Mark Zulauf ([email protected]) on 2014-12-11T20:54:02Z
Item was in collections:
University of Illinois Theses & Dissertations (ID: 1)
No. of bitstreams: 2
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Froeter_Paul.docx: 10158015 bytes, checksum: 26233bd3b4f46c78ea291659bab57c46 (MD5)Embargo set by: Seth Robbins for item 73216
Lift date: 2017-01-21T19:56:18Z
Reason: Author requested U of Illinois access only (OA after 2yrs) in Vireo ETD systemU of I Only Restriction Lifted for Item 73216 on 2017-01-22T10:15:40Z
Metal-assisted chemical etching of 4H silicon carbide
No full textMetal-assisted chemical etching (MacEtch) is a wet etching method that can produce high aspect ratio nanostructures with minimal crystal damage. The MacEtch process has been demonstrated to overcome limitations of dry and wet etching in several materials, studied extensively since its discovery by Li and Bohn in 2000. These include several semiconductor substrates (Si, GaAs, InP, GaP, GaN, Ga2O3, and SiC) and catalysts (Au, Ag, Pt, Pd, graphene, Cu), each demonstrated with different degrees of anisotropy, porosity, and etching conditions.
SiC has only ever been demonstrated to etch with a porous layer generated using a wet etching method. This is a serious limitation for its applicability to a wider range of etching applications. In this thesis, nanoscale nonporous wet etching is demonstrated on 4H-SiC. Both photolithography and nanosphere lithography are used to pattern the substrate, being compared in etch quality and characteristics. Control of porosity and etch rate are presented, with a mechanism analysis provided to complement the explanations in the literature.Submission published under a 24 month embargo labeled 'Closed Access', the embargo will last until 2022-05-01The student, Julian Michaels, accepted the attached license on 2020-05-12 at 13:11.The student, Julian Michaels, submitted this Thesis for approval on 2020-05-12 at 13:24.This Thesis was approved for publication on 2020-05-12 at 16:36.DSpace SAF Submission Ingestion Package generated from Vireo submission #15354 on 2020-08-25 at 17:44:23Made available in DSpace on 2020-08-27T00:51:32Z (GMT). No. of bitstreams: 2
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Previous issue date: 2020-05-12Embargo set by: Seth Robbins for item 115962
Lift date: 2022-08-27T00:51:40Z
Reason: Author requested closed access (OA after 2yrs) in Vireo ETD systemAuthor requested closed access (OA after 2yrs) in Vireo ETD systemLimite
Self-rolled-up membrane (S-RuM) capacitors and filters for radio frequency communication
No full textSelf-rolled-up membrane (S-RuM) is a novel technology to build precisely controllable three- dimensional (3D) micro-structures. This technology finds wide applications in passive electronics, photonics, and neural interfaces, and achieves great device size reduction and performance enhancement. For passive electronics, devices based on S-RuM utilize electromagnetic energy well- confined in the device tubular cavity with extremely high efficiency, and break the footprint and parasitic effect limit set by conventional planar devices. S-RuM inductors and capacitors can reach self- resonant frequency up to 60 GHz, Q factor up to 80, and with footprint one hundredth that of the state- of-the-art 2D counterparts. This thesis illustrates the working mechanism of S-RuM technology first, and then introduces S-RuM passive electronic devices for radio frequency (RF) application. Current approaches to improve RF passive device performance are discussed. Designs of capacitors and filters based on S-RuM are demonstrated, followed by simulation and lab measurement results. Challenges associated with S-RuM passive electronics are addressed and solutions are proposed. Future work and potential wearable device applications are summarized.Submission published under a 24 month embargo labeled 'Closed Access', the embargo will last until 2019-12-01The student, Moyang Li, accepted the attached license on 2017-12-15 at 09:32.The student, Moyang Li, submitted this Thesis for approval on 2017-12-15 at 09:45.This Thesis was approved for publication on 2017-12-15 at 09:53.DSpace SAF Submission Ingestion Package generated from Vireo submission #11992 on 2018-03-13 at 10:38:29Made available in DSpace on 2018-03-13T17:35:58Z (GMT). No. of bitstreams: 2
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Previous issue date: 2017-12-15Embargo set by: Seth Robbins for item 105509
Lift date: 2020-03-13T17:36:05Z
Reason: Author requested closed access (OA after 2yrs) in Vireo ETD systemLimited Restriction Lifted for Item 105509 on 2020-03-14T09:15:22Z
Oubliez-moi
No full textEn septembre 2023 est parue aux éditions M.E.O. la version française du livre Oubliez-moi (titre original Wangji wo 忘记我, publié originellement auprès de 译林出版社 Yilin Press), un ouvrage biographique de l’écrivain et journaliste chinois 徐风 Xu Feng. La traduction est l’œuvre de Kevin Henry, chef du service ChinEAsT. Oubliez-moi narre, à la manière d’un reportage entrelacé de flashbacks, la vie tumultueuse de 钱秀玲 Qian Xiuling(1912–2008), héroïne sino-belge méconnue dans son propre pays d’adopti..
Inverse metal-assisted chemical etching of indium phosphide with sub-20 nm scalability
No full textMetal-assisted chemical etching (MacEtch), a wet etching method developed in 2000, has been the focus of extensive research in the area of semiconductor nanotechnology for the last decade, mainly in Si. In principle, MacEtch can be applicable to the other semiconductors if there exists a significant etch rate difference between the areas with and without the metal coverage. Due to this, MacEtch has recently attracted much attention in extending this technique to III-V semiconductors such as GaAs, GaN, and InP. This thesis demonstrates uniform array-based InP nanostructures with lateral dimensions as small as sub-20 nm using inverse metal-assisted chemical etching (I-MacEtch), a purely solution-based yet anisotropic etching method. The type and geometry of the metal catalyst as well as etchant ratio and concentration are explored to achieve various InP nanostructure features. Unique to I-MacEtch, the sidewall etching profile is remarkably smooth, independent of metal pattern edge roughness. The capability of this simple method to create various InP nanostructures can potentially enable an aggressive scaling of InP based transistors and optoelectronic devices with better performance and at lower cost than conventional etching methods.Item withdrawn by Mark Zulauf ([email protected]) on 2014-04-30T14:32:27Z
Item was in collections:
University of Illinois Theses & Dissertations (ID: 1)
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Original Data
Group with Access UIUC Users [automated]
Release Date: 2016-05-30 12:09:03 UTC
Reason: Author requested U of Illinois access only (OA after 2yrs) in Vireo ETD systemItem marked as restricted to the 'UIUC Users [automated]' Group (id=2) by Seth Robbins ([email protected]) on 2014-05-30T17:09:17Z
Item is restricted until 2016-05-30T17:09:03ZU of I Only Restriction Lifted for Item 49704 on 2016-09-22T20:59:19Z
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