1,721,391 research outputs found

    Pietro Aretino, Teatro, t. III: Il Filosofo; L'Orazia

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    Il volume comprende l'edizione di due testi di Pietro Aretino: il primo (pp. 1-164) a cura di A. Decaria, il secondo (pp. 165-293) a cura di F. Della Corte

    Pietro Aretino, Teatro, t. III: Il Filosofo; L'Orazia

    No full text
    Il volume comprende l'edizione di due testi di Pietro Aretino: il primo (pp. 1-164) a cura di A. Decaria, il secondo (pp. 165-293) a cura di F. Della Corte

    An Overview of Indoor Localization System for Human Activity Recognition (HAR) in Healthcare

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    : The number of older people needing healthcare is a growing global phenomenon. The assistance in long-term care comprises a complex of medical, nursing, rehabilitation, and social assistance services. The cost is substantial, but technology can help reduce spending by ensuring efficient health services and improving the quality of life. Advances in artificial intelligence, wireless communication systems, and nanotechnology allow the creation of intelligent home care systems avoiding hospitalization with evident cost containment. They are capable of ensuring functions of recognition of activities, monitoring of vital functions, and tracking. However, it is essential to also have information on location in order to be able to promptly intervene in case of unforeseen events or assist people in carrying out activities in order to avoid incorrect behavior. In addition, the automatic detection of physical activities performed by human subjects is identified as human activity recognition (HAR). This work presents an overview of the positioning system as part of an integrated HAR system. Lastly, this study contains each technology's concepts, features, accuracy, advantages, and limitations. With this work, we want to highlight the relationship between HAR and the indoor positioning system (IPS), which is poorly documented in the literature

    Introduzione al De differentia similium significationum di Nonio

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    La pratica delle Differentiae verborum, a differenza di quanto sostenuto da Brugnoli, che la colloca agli albori del Medioevo, risale secondo la testimonianza platonica a Prodico di Ceo, e all'esigenza da parte della filosofia di costruirsi un linguaggio tecnico dal significato inequivocabile; lo Stoicismo riprenderà poi questra pratica compilando lunghi elenchi di sinonimi all'interno della sua teoria delle passioni. Solo successivamente, cristallizzandosi, le differenze fra sinonimi divennero una pratica grammaticale, di cui abbiamo un'ottima testimonianza antica del V libro del De conpendiosa doctrina di Nonio Marcello, tutto dedicato appunto alle Differentiae, e in cui si scorgono ancora tracce dell'origine filosofica della riflessione sui sinonimi.The practice of the Differentiae verborum, unlike what Brugnoli argues, placing it at the dawn of the Middle Ages, dates back, according to the Platonic testimony, to Prodicus di Ceos, and to the philosophy's need to construct a technical language with unequivocal meaning; Stoicism will then resume this practice by filling in long lists of synonyms within its theory of passions. Only later, crystallizing, the differences between synonyms became a grammatical practice, of which we have an excellent ancient testimony in the fifth book of the De conpendiosa doctrina by Nonius Marcellus, entirely dedicated to the Differentiae, and in which we can still see traces of the philosophical origin of reflection on synonyms

    Electronic sensors for intraoral force monitoring: State-of-the-art and comparison

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    The aim of this work is to provide a comprehensive view on sensors technology for intraoral forces monitoring. State-of-the-art electronic sensors, exploitable for the application of measuring intraoral human forces are compared in this work. Furthermore, a possible configuration for data acquisition from multiple sensors, using Wheatstone bridges to detect the resistance variation and the force output of miniature strain gauges, is also provided

    Mobile synchronization recovery for ultrasonic indoor positioning

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    The growing interest for indoor position-based applications and services, as well as ubiquitous computing and location aware information, have led to increasing efforts toward the development of positioning techniques. Many applications require accurate positioning or tracking of people and assets inside buildings, and some market sectors are waiting for such technologies for starting a fast growth. Ultrasonic systems have already been shown to possess the desired positioning accuracy and refresh rate. However, they still require accurate synchronization between ultrasound emitters and receivers to work properly. Usually, synchronization is carried out through radio frequency (RF) signals, adding system complexity and raising the cost. In this work, this limit is overcome by introducing a novel self-synchronizing indoor positioning technique. Ultrasonic signals travel from emitters placed at fixed reference positions to any number of mobile devices (MD). The travelled distance is computed from the time of flight (TOF), which requires in turn synchronism between emitter and receiver. It is shown that this synchronism can be indirectly estimated from the time difference of arrival (TDOA) of the ultrasonic signals. The obtained positioning information is private, in the sense that the positioning infrastructure is not aware of the number or identity of the MDs that use it. Computer simulations and experimental results obtained in a typical office room are provided

    Temperature and SiO2/4H-SiC interface trap effects on the electrical characteristics of low breakdown voltage MOSFETs

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    The temperature and carrier-trapping effects on the electrical characteristics of a 4H silicon carbide (4H-SiC) metal–oxide–semiconductor field effect transistor (MOSFET) dimensioned for a low breakdown voltage (BVDS) are investigated. Firstly, the impact of the temperature is evaluated referring to a fresh device (defects-free). In particular, the threshold voltage (Vth), channel mobility (μch), and on-state resistance (RON) are calculated in the temperature range of 300 K to 500 K starting from the device current–voltage characteristics. A defective MOSFET is then considered. A combined model of defect energy levels inside the 4H-SiC bandgap (deep and tail centers) and oxide-fixed traps is taken into account referring to literature data. The simulation results show that the SiO2/4H-SiC interface traps act to increase RON, reduce μch, and increase the sensitivity of Vth with temperature. In more detail, the deep-level traps in the mid-gap have a limited effect in determining RON once the tail traps contributions have been introduced. Also, for gate biases greater than about 2Vth (i.e., VGS > 12 V) the increase of mobile carriers in the inversion layer leads to an increased screening of traps which enhances the MOSFET output current limiting the RON increase in particular at low temperatures. Finally, a high oxide-fixed trap density meaningfully influences Vth (negative shifting) and penalizes the device drain current over the whole explored voltage range
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