1,721,041 research outputs found
Influence of growth temperature on buffer leakage current of AlGaN/GaN/AlGaN DH-FET grown on silicon substrates
No full textCompressive stress relaxation in Si-doped GaN grown on Si(111) investigated by in situ curvature measurement
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Indium Rich III-Nitrides on Germanium by Molecular Beam Epitaxy
No full textIndium containing III-Nitride layers are predominantly grown by heteroepitaxy on foreign substrates, most often Al2O3, SiC and Si. We have investigated the epitaxial growth of InxGa1-xN (InGaN) alloys on Ge substrates. First we looked at the influence of buffer layers between the InGaN and Ge substrate. When applying a high temperature (850 °C) GaN buffer, the InGaN showed superior crystal quality. Furthermore the influence of growth parameters on the structural quality and composition of InGaN layers has been looked into. For a fixed gallium and nitrogen supply, the indium beam flux was increased incrementally. For both nitrogen- as well as for metal (Ga + In) rich growth conditions, the In incorporation increases for increasing In flux. However, for metal rich growth conditions, segregation of metallic In is observed. An optimum in crystal quality is obtained for a metal:nitrogen flux ratio close to unity. The XRD FWHM of the GaN (0002) reflection increases significantly after InGaN growth. Apparently the presence of indium deteriorates the GaN buffer during InGaN growth. The mechanism of the effect is not known yet.status: Publishe
Growth and optimization of InGaN/InGaN multiple quantum wells by metal organic vapour phase epitaxy
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Contactless mobility measurements of inversion charge carriers on silicon substrates with SiO2 and HfO2 gate dielectrics
No full textNon-contact metrology for inversion charge carrier mobility by corona charge and photovoltage measurements on blank wafers with a gate dielectric
No full textNoncontact metrology for inversion charge carrier mobility by corona charge and photovoltage measurements on blank wafers with a gate dielectric
No full textGaN-on-Si: A scalable material system to realize cost effective next-generation solid state lighting and power devices
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