1,721,207 research outputs found
Comics and Religion in Liquid Modernity
No full textSince the early twenty-first century, the study of comic books, manga, and graphic novels has taken off. Religion is involved with comics in several ways. De Groot distinguishes four questions. How do religions use and respond to comics? How do comics represent and criticize religion? When does the social role of comics resemble the social role of religion? And finally: what and how do comics teach about religion, culture, and society? These issues structure a systematic collection of essays that gives an impetus to the new field of research into comics and religion from a sociological perspective. In liquid modernity, the articulation of the sacred is no longer governed by religions. Religion is both “in there,” and “out there,” mediatized also by cartoons, comics, and animated movies
Comics as a Way of Doing, Encountering, and Making Religion
No full textWhat can be learned from the research presented in Culture, Comics, and Religion. Faith imagined? De Groot collects and systematizes the results and suggests paths for further research. He shows how comics are a way of doing, encountering, and making religion in liquid modernity, and argues that comics deserve more attention from the perspective of material religion, lived religion, and fiction-based religion
Electrodeposited PdNi as possible ferromagnetic contacts for Carbon nanotubes.
No full textA process for electrodepositing PdNi alloys and subsequent characterisation studies are reported. PdNi alloys are deposited on 0.019-0.021 Ω.cm and 1-2 Ω.cm n-type Silicon from a bath of Pd-ethylenediamine dichloride and Ni sulphate. The deposited films form excellent Schottky barriers on 1-2 Ω.cm Si with leakage currents of the order of µA/cm2 and forward current higher than the reverse current by about six orders of magnitude at 1V. Ni atomic fractions in the deposited films are studied for different bath concentrations and the deposition potential was found to play an important role in deciding the composition of the deposited film. For high Ni concentration solutions, it is possible to deposit films with a wide range of Ni content by varying the deposition potential, while this method cannot be used with low Ni concentration solutions. Films with Ni concentrations above 30% were observed to be ferromagnetic at room temperature and ferromagnetic properties strengthened with Ni content. A structure for a carbon nanotube device is proposed and electrical characterisations of the device using PdNi alloy contacts are presented. The Schottky barrier characteristics and ferromagnetic character make PdNi alloys a good material for ferromagnetic contacts to CNTs on a Si substrate
A Vertical Transport Geometry for Electrical Spin Injection and Extraction in Si
No full textSchottky barriers formed between ferromagnetic metal and Semiconductor are of particular interest for spin injection and detection experiments. Here, we investigate electrical spin polarized carrier injection and extraction in Si using a Co/Si/Ni vertical structure built on a 250 nm thick Si membrane. Current-voltage measurements performed on the devices at low temperatures showed evidence of the conduction being dominated by thermionic field emission, which is believed to be the key to spin injection using Schottky junctions. This, however, proved inconclusive as our devices did not show any magnetoresistance signal even at low temperatures. We attribute this partially to the high resistance-area product in our Schottky contacts at spin injection biases. We show the potential of this vertical Spin-device for future experiments by numerical simulation. The results reveal that by growing a thin highly doped Ge layer at the Schottky junctions the resistancearea products could be tuned to obtain high magnetoresistance
The effect of atomic layer deposition temperature on switching properties of HfOx resistive RAM devices
No full textTiN/HfOx/TiN resistive RAM (RRAM) devices have been fabricated where the hafnium oxide layer has been deposited at three different temperatures via atomic layer deposition (ALD). Material characterization shows the structure of the hafnium oxide is converted from cubic to monoclinic for 400 degrees C. Elemental analysis shows that the temperature affects the stoichiometric behavior of hafnium oxide, with a higher oxygen concentration at 350 degrees C and above. The switching behavior differs significantly for each device whereby the 400 degrees C device shows no successful switching, due to the change in structure to monoclinic. The two lower temperatures both show successful bipolar switching which set at negative voltages. The 300 degrees C device has a higher Roff/Ron of 13.9, with superior endurance. The 350 degrees C device has a lower Roff/Ron of 5.5 and shows deterioration in switching properties as the number of cycles are increased. At 300 degrees C, the oxygen hafnium ratio is at a minimum; hence the greatest amount of oxygen vacancies are present, which results in improved switching characteristics. This supports the theory that oxygen vacancies play a key role in the switching mechanism for metal oxide RRAM devices
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