1,721,064 research outputs found
Total Ionizing Dose TCAD simulation of 400 nm SiO2 capacitor
Full text linkSynopsys Sentaurus TCAD simulation of 400 nm SiO2 capacitor under gamma irradiation.
Dataset supports:
Chatzikyriakou, Eleni et al (2017) A systematic method for simulating total ionizing dose effects using the finite elements method. Journal of Computational Electronics.
Funded by EPSRC award 1304067. </span
Dataset: RDF and TID simulation of PDSOI 45nm MOSFET
No full textDataset supporting:
Chatzikyriakou, Eleni, Redman-White, William and De Groot, Kees (2016) Total Ionizing Dose, Random Dopant Fluctuations and its combined effect in the 45 nm PDSOI node. Microelectronics Reliability.</span
Modelling resistive and phase‑change memory with passive selector arrays: a MATLAB tool
No full textMemristor devices are crucial for developing neuromorphic computers and next-generation memory technologies. In this work, we provide a comprehensive modelling tool for simulating static DC reading operations of memristor crossbar arrays that use passive selectors with matrix algebra in MATLAB. The software tool was parallel coded and optimised to run with personal computers and distributed computer clusters with minimised CPU and memory consumption. We study the effect of changing the line resistance, array size, voltage selection scheme, selector diode’s ideality factor, reverse saturation current and sense resistance on the electrical behaviour and expected sense margin of a conventional one-diode-one-resistor crossbar arrays. We then investigate the effect of single- and dual-side array biasing and grounding on the dissipated current throughout the array cells. The tool we offer to the memristor community and the studies we present enable the design of larger and more practical memristor arrays for application in data storage and neuromorphic computing
A systematic method for simulating total ionizing dose effects using the finite elements method
No full textSimulation of total ionizing dose effects in field isolation of FET technologies requires transport mechanisms in the oxide to be considered. In this work, carrier transport and trapping in thick oxides using the finite elements method in the Synopsys Sentaurus platform are systematically simulated. Carriers are generated in the oxide and are transported out through a direct contact with the gate and thermionic emission to the silicon. The method is applied to calibrate experimental results of 400 nm SiO2 capacitors irradiated at total doses of 11.6 kRad (SiO2) and 58 kRad (SiO2). Drift–diffusion-enabled trapping as well as other issues that arise from the involved physics are discussed. Effective bulk trap densities and activation energies of the traps are extracted
Observation of negative differential conductance in a reverse-biased Ni/Ge Schottky diode
No full textWe report the experimental observation of negative differential conductance in a Ni/Ge Schottky diode. With the aid of theoretical models and numerical simulation we show that, at reverse bias, electons tunnel into the high electric field of the depletion region. This scatters the electrons into the upper valley of the Ge conduction band, which has a lower mobility. The observed negative differential conductance is hence attributed to the transferred-electron effect. This shows that Schottky contacts can be used to create hot electrons for transferred-electron devices
Dataset for 'Nanoscale modeling of electro-plasmonic tunable devices for modulators and metasurfaces'
No full textDatapoints of the published graphs in:
Riedel, C., De Groot, C., Muskens, O., and Sun, K. (2017). Nanoscale modeling of electro-plasmonic tunable devices for modulators and metasurfaces. Optics Express.</span
Total Ionizing dose hardened and mitigation strategies in deep submicrometer CMOS and beyond
Full text linkFrom man-made satellites and interplanetary missions to fusion power plants, electronic equipment that needs to withstand various forms of irradiation is an essential part of their operation. Examination of total ionizing dose (TID) effects in electronic equipment can provide a thorough means to predict their reliability in conditions where ionizing dose becomes a serious hazard. In this paper, we provide a historical overview of logic and memory technologies that made the biggest impact both in terms of their competitive characteristics and their intrinsically hardened nature against TID. Further to this, we also provide guidelines for hardened device designs and present the cases where hardened alternatives have been implemented and tested in the lab. The technologies that we examine range from silicon-on-insulator and FinFET to 2-D semiconductor transistors and resistive random access memory
Dataset for Switching kinetics of SiC resistive memory for harsh environments
No full textDataset for figures in:
Morgan, K. et al (2015). Switching kinetics of SiC resistive memory for harsh environments. AIP Advances.
Funded by EPSRC</span
Dataset for Back-end-of-line a-SiOxCy:H dielectrics for resistive memory
No full textDataset of figures in the paper Fan, J., Kapur, O., Huang, R., De Groot, C., & Jiang, L. (2018). Back-end-of-line a-SiOxCy:H dielectrics for resistive memory. AIP Advances. This dataset including XPS on a-SiOxCy:H films and current-voltage measurements tests on W/a-SiOxCy:H/Cu resistive memories.</span
Back-end-of-line a-SiOxCy:H dielectrics for resistive memory
No full textResistive switching of W/amorphous (a)-SiOxCy:H/Cu resistive memories incorporating solely native back-end-of-line (BEOL) materials were studied. A-SiC1.1:H, a-SiO0.9C0.7:H, and a-SiO1.5C0.2:H were exploited as switching layers for resistive memories which all show resistive-switching characteristics with ultrahigh ON/OFF ratios in the range of 1E6 to 1E10. Ohmic conduction in the low resistance state is attributed to the formation of Cu conductive filament inside the a-SiOxCy:H switching layer. Rupture of the conductive filament leads to current conduction dominated by Schottky emission through a-SiOxCy:H Schottky contacts. Comparison of the switching characteristics suggests composition of the a-SiOxCy:H has influences on VFORM and VSET, and current conduction mechanisms. These results demonstrate the capability to achieve functional W/a-SiOxCy:H/Cu using entirely BEOL native materials for future embedded resistive memories
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