10,580 research outputs found
Profil de recherche_ Catalina C. DOBRE
No full textCatalina Codruta Dobre a commencé son cursus à l’Université d’Architecture et d’Urbanisme ION MINCU à Bucarest (Roumanie) en 2006. Après une année Erasmus en 2010 à la Faculté d’Architecture La Cambre-Horta, elle décide d’y poursuivre ses études de master et sort diplômée en 2012 en Architecture. Suite à sa participation au workshop à Ishinomaki, Japon, consacré à la reconstruction de la ville après un désastre naturel, Catalina Codruta Dobre commence à s’intéresser à la relation entre l’urba..
Portrait of Dymphna Cusack, author [picture]
No full textCondition: Good.; Part of collection: Ion Idriess glass plate negative collection.; Title from signature on image.; Also available in an electronic version via the Internet at: http://nla.gov.au/nla.pic-vn3299415. "My love, Dymphna Cusack 1954"--signature on image
ROMANIA’S ECONOMIC ARGUMENTS REGARDING THE SHORTNESS OF THE SECOND WORLD WAR
No full textRomania's contribution to the cause of the United Nations would be significant, leading to shortness of the war with about 200 days and giving them significant strategic, material and human advantage. Despite the fact that Romania’s economic war effort was figured at the enormous amount of 1,200,000,000 dollars, foreign currency in 1938, this would assure the country an honorable place four in the hierarchy of the United Nations which led the fight against Germany the cobeligeranta status, truly deserved by the state would be refused because of political considerations known only by Great Powers. Among all the states in a situation somehow similar to that of Romania, none made such a huge military and economic effort in defeating the Nazi war machine.economic contribution, war effort, claims, convention truce
ESTIMATING THE SIZE OF ROMANIAN SHADOW ECONOMY USING THE CURRENCY DEMAND APPROACH
No full textIn this paper, we estimate the size and the evolution of the Romanian shadow economy in the period 1998Q1-2008Q4, using a vector error correction model. A special attention it was given to the problem of non-stationarity and cointegration. The results indshadow economy,currency demand approach, VECM, Romania
Ion Idriess, author, 1953
No full textIon Idriess, author, sitting at a desk reading his book "Lightning Ridge
MIAMI: Microscope and ion accelerator for materials investigations
No full textA transmission electron microscope (TEM) with in situ ion irradiation has been built at the University of Salford, U.K. The system consists of a Colutron G-2 ion source connected to a JEOL JEM-2000FX TEM via an in-house designed and constructed ion beam transport system. The ion source can deliver ion energies from 0.5 to 10 keV for singly charged ions and can be floated up to 100 kV to allow acceleration to higher energies. Ion species from H to Xe can be produced for the full range of energies allowing the investigation of implantation with light ions such as helium as well as the effects of displacing irradiation with heavy inert or self-ions. The ability to implant light ions at energies low enough such that they come to rest within the thickness of a TEM sample and to also irradiate with heavier species at energies sufficient to cause large numbers of atomic displacements makes this facility ideally suited to the study of materials for use in nuclear environments. TEM allows the internal microstructure of a sample to be imaged at the nanoscale. By irradiating in situ it is possible to observe the dynamic evolution of radiation damage which can occur during irradiation as a result of competing processes within the system being studied. Furthermore, experimental variables such as temperature can be controlled and maintained throughout both irradiation and observation. This combination of capabilities enables an understanding of the underlying atomistic processes to be gained and thus gives invaluable insights into the fundamental physics governing the response of materials to irradiation. Details of the design and specifications of the MIAMI facility are given along with examples of initial experimental results in silicon and silicon carbide
Small microwave ion source for an ion implanter
No full textThree kinds of small 24.5 GHz microwave ion sources have been developed for a middle current implanter. The magnetic fields of the sources are produced by an electromagnetic coil, electromagnetic coil added permanent magnet ring, and permanent magnet rings, respectively. Adopting single-hole accel-decel extraction electrodes with about 5 mA of nitrogen and oxygen, ion current can be extracted from them. The microwave power consumption is about 100-200 W. (C) 1996 American Institute of Physics.Instruments & InstrumentationPhysics, AppliedSCI(E)
Recent ion source development in China
No full textThe recent development of various types of ion sources and their application in China is reviewed. Emphasis is given to new improvements of the electron cyclotron resonance ion source; MEVVA ion source, electron beam evaporation metal ion source, compact multicusp ion source, as well as compact negative ion sources with permanent magnets. Some of the new proposals are also presented. (C) 1996 American Institute of Physics.Instruments & InstrumentationPhysics, AppliedSCI(E)
Doubly-charged Negative Ion of C60 Molecule
No full textWithin the Dirac- and Lorentz-bubble potential models an electronic structure of the doubly-charged negative ion -2 C has been studied by a variational method. It is s 60 hown that even in the first approximation of this method when a trial wave function of the two electrons is represented as a product of one-electron functions the total energy of the system is negative, a manifestation of the existence of a stable state of the doubly-charged negative ion in these models. The second electron affinity of C60 according to estimation is about ?2 ? 1 eV. The photodetachment cross sections ?(?) of this ion have been calculated as well. Near threshold ?(?) is found to exhibit peculiar and interesting behavior. The first cross section accompanied by the transformation of the doubly-charged negative ion into a singly-charged one is exponentially small near the process threshold. The second cross section corresponds to the photodetachment of a singly-charged ion; it increases at the threshold as a power function of the kinetic energy of the photoelectron. These cross sections are of the same order as the photodetachment cross sections of atomic ions with the same electron affinity
Development of ion sources for materials processing in China
No full textThis article reviews the development of ion sources for materials processing and the progress of commercial product of ion sources in China. The various ion-beam processing and the relative needs to ion sources are mentioned and discussed, such as ion sources with ion implantation, plasma immersion ion implantation, ion-beam-assisted deposition, ion-beam deposition, and so on. The states of progress for different kinds of ion sources specially for electron cyclotron resonance/ microwave, metal vapor vacuum arc, radio frequency (rf) ion source, end-Hall ion source, and cluster ion source, are given and discussed. (c) 2006 American Institute of Physics.Instruments & InstrumentationPhysics, AppliedSCI(E)CPCI-S(ISTP)
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