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AUGEREMISSION-SPECTROSCOPY AND PHOTOEMISSION-SPECTROSCOPY STUDIES OF THE LOCAL DENSITY OF STATES OF A-SI1-XCX-H ALLOYS AT LOW C-CONCENTRATION
No full textValence states of a-Si1-xCx:H alloys have been studied by combining photoemission and Auger spectroscopies. It is found that heteronuclear Si-C bonds are strongly favored. The analysis of the Si CVV and C KVV Auger processes shows that relaxation and correlation effects are small in these alloys, with the possible exception of transitions involving electrons in hydrogen bonds, which are localized. By combining information from valence-band energy-distribution curves, core-level, and Auger spectroscopies the relative position of the onsets and of the maxima of the local density of states at C and Si was established
DISTRIBUTION OF OCCUPIED STATES IN A-C-H AND A-SI1-XCX-H ALLOYS AS DETERMINED BY TOTAL YIELD SPECTROSCOPY
No full textThe density of occupied states at the valence band edge and in the pseudo-gap is investigated by using Total yield spectroscopy. It is found that close to the valence band edge the yield spectra follow a (h-nu - E(v))3/(h-nu)2 dependence. A large increase of gap state density with increasing carbon content is also found
PHOTOCONDUCTIVITY AND INTERFACE DEFECTS IN A-SI-H A-SI1-XCX-H MULTI-QUANTUM-WELL STRUCTURES
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