1,721,006 research outputs found
Determination of the surface electrical activity in Silicon wafers with a laser pump-probe measurement
No full textDetermination of single mode condition in dielectri rib waveguide with large cross section by finite element analysis
No full textAccurate modelling of the pump-probe spatial interaction in an all-optical recombination lifetime measurement setup
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Electrically induced Bragg Reflectors in InP/InGaAsP waveguides as ultrafast optoelectronic modulators
Full text linkIn this paper, with the help of numerical simulations, we show how it is possible to create a Distributed Bragg Reflector by electrically inducing periodical refractive index variations in unperturbed III-V rib-waveguides to design different kind of devices. This approach allows to induce the optoelectronic devices by a suitable reconfiguration of the potential applied to the electrode matrix, i.e. to have a defined routing/switching matrix, or, for dynamic applications, realize intensity modulators, capable of reaching a theoretical 40 GHz switching speed
The POLIS interferometer for ponderomotive squeezed light generation
No full textPOLIS (POnderomotive LIght Squeezer) is a suspended interferometer, presently under construction, devoted to the generation of ponderomotive squeezed light and to the study of the interaction of non classical quantum states of light and macroscopic objects. The interferometer is a Michelson whose half-meter long arms are constituted by high-finesse cavities, suspended to a seismic isolation chain similar to the Virgo SuperAttenuator. The mass of the suspended cavity mirrors are chosen to be tens of grams: this value is sufficiently high to permit the use of the well-tested Virgo suspension techniques but also sufficiently small to generate the coupling among the two phase quadratures with a limited amount of light in the cavity, of the order of few tens of kW. In this short paper the main features of the interferometer are shown, together with the expected sensitivity and squeezing factor
Achieving Extreme Etching Rates by Overcoming SiliconPassivity
No full textUltrarapid anodic dissolution of silicon in HF-free solutions is reported. Although the etch rates are insignificant up to a potential
of 25 V, when shifting the potential to higher values of 35–55 V the silicon etch rate reached a record value of more than
30 m/min. In addition, surface morphologies are notably affected by the applied potential, modifying the surface from a porous
one to a partially polished one
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