19 research outputs found
Post-metallization annealing and photolithography effects in p-type Ge/Al 2 O 3 /Al MOS structures
No full textIn this work, the combined effect of negative tone photolithography and post-metallization annealing (PMA) on the electrical behavior of Al/Al2O3/p-Ge MOS structures are investigated. During photoresist development, the exposed upper part of the Al2O3 film weakens due to the reaction with the developer. Subsequent processes of Al deposition and PMA at 350 °C result in alumina thickness reduction. The gate electrode formation seems to involve at least three processes: (a) germanium substrate out-diffusion and accumulation at the top of the alumina layer that takes place during the alumina deposition, (b) alumina destabilization, and (c) germanium diffusion into the deposited Al metal and Al diffusion into the alumina. The overall effect is the reduction of the alumina thickness due to its partial consumption. It is shown that the germanium diffusion depends on the annealing duration, and not on the annealing ambient (inert or forming gas). Although PMA passivates interface traps near the valence band edge, the insulating properties of the stacks are degraded. This degradation appears as a low-level ac loss, attributed to a hopping current that flows through the Al2O3 layer. The results are discussed and compared to recently reported on Pt/Al2O3/p-Ge structures formed and treated under the same conditions
Phosphorous Diffusion in N2+ -Implanted Germanium during Flash Lamp Annealing: Influence of Nitrogen on Ge Substrate Damage and Capping Layer Engineering
No full textIn this work we present a systematic study on post-implantation phosphorous diffusion control in Ge by co-implanted nitrogen in combination with various surface capping layers (Al2O3, SiO2 and Si3N4). Phosphorous has been implanted at low energy (11 keV) and high dose (1015 cm−2) in p-Ge (100) already implanted or not with low energy (10 keV−5 × 1014 cm−2) N2+. Flash Lamp Annealing (FLA) at 800–850°C for 20 ms in inert ambient has been used as post-implantation annealing scheme. In the absence of nitrogen, significant substrate damage and capping layer deterioration prevents a reliable comparison among the three capping materials. The presence of nitrogen in the Ge substrate, effectively suppresses the damage observed after the FLA. In this case, P diffusion is additionally retarded in the presence of Al2O3 as compared to SiO2 and Si3N4. The experimental results constitute a direct evidence of the action of the three capping layers as sinks for Ge vacancies with different interface recombination velocities. On the contrary, the nitrogen diffusion data suggest that interface recombination velocities of Ge interstitials are almost independent of the capping layer choice
Application of the partial wave expansion method in 3-D low energy electron beam lithography simulation
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ELECTRONIC TRANSPORT PROPERTIES OF ORGANIC/INORGANIC COMPOSITE MATERIALS IN THE NANOSCALE
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Development mechanism study by dissolution monitoring of positive methacrylate photoresists
No full textCompound polymeric materials in molecular nanodevices: electrical behavior of zero-dimension semiconducting inorganic molecules embedded in a polymer substrate
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Tunneling and negative resistance effects for composite materials containing polyoxometalate molecules
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