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Microcrystalline to nanocrystalline silicon phase transition in hydrogenated silicon carbon alloy films
Crystallization of Hydrogenated Amorphous Silicon Carbon Films with Laser and Thermal Annealing
Correlation between structural and opto-electronic properties of a-Si1-xCx:H films deposited by PECVD
Room temperature visibile photoluminescence of silicon nanocrystallites embedded in amorphous silicon carbide matrix
The nanocrystalline silicon embedded in amorphous silicon carbide matrix was prepared by varying rf power in high vacuum plasma enhanced chemical vapor deposition system using silane methane gas mixture highly diluted in hydrogen. In this paper, we have studied the evolution of the structural, optical, and electrical properties of this material as a function of rf power. We have observed visible photoluminescence at room temperature and also have discussed the role played by the Si nanocrystallites and the amorphous silicon carbide matrix. The decrease of the nanocrystalline size, responsible for quantum confinement effect, facilitated by the amorphous silicon carbide matrix, is shown to be the primary cause for the increase in the PL intensity, blueshift of the PL peak position, decrease of the PL width (full width at half maximum) as well as the increase of the optical band gap and the decrease of the dark conductivity
Study on the microstructural and overall disorder in hydrogenated amorphous silicon carbon films
Evolution of structural and optical properties of nanostructured silicon carbon films deposited by plasma enhanced chemical vapour deposition
Nanostructured silicon carbon films composed of silicon nanocrystallites embedded in hydrogenated amorphous silicon carbon matrix have been deposited by plasma enhanced chemical vapour deposition technique using silane and methane gas mixture highly diluted in hydrogen. The structural and optical properties of the films have been investigated by X-ray diffraction, Raman, Fourier transform infrared, ultra violet-visible-near infrared and photoluminescence spectroscopies while the composition of the films has been obtained from nuclear techniques. The study has demonstrated that the structure of the films evolves from microcrystalline to nanocrystalline phase with the increase in radio frequency (rf) power. Further, it is shown that with increasing the rf power the size of silicon nanocrystallites decreases while the optical gap increases and a blueshift of visible room temperature photoluminescence peak can be observed. (c) 2012 Elsevier B.V. All rights reserved
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