1,721,050 research outputs found
InP Monolithically Integrated Transmitters Based on High Speed Directly Modulated DFB Lasers
No full textIn this paper we summarize results concerning high-speed integrated multi-wavelength transmitters fabricated using a generic InP integration platform. The photonic integrated circuits (PICs) include tunable directly modulated DFB lasers emitting in the C-band, monitoring photodetectors, MMI couplers and output spot size converters. The directly modulated lasers, designed in order to fit within a 100 GHz grid, show a maximum 3-dB small signal bandwidth of 21 GHz and a tunability range of about 4 nm. In particular, we report an 8-channel transmitter showing operation up to 30 Gb/s per channel (for 200+ Gb/s applications) and a 4-channel transmitter capable of operating up to 34 Gb/s per channel (for 100+ Gb/s applications). Error free operation (bit error rates <10-9) is achieved for all the channels in all the cases
A Lithium Niobate on Insulator Based Photonic Neural Network
No full textWe propose and simulate a photonic neuromorphic engine that exploits the Lithium-Niobate-on-Insulator (LNOI) integration platform. The resulting reduced-precision vector-matrix multiplier can trade off speed with resolution at a reduced power consumption enabled by LNOI platform
Graphene on Silicon Modulators
No full textGraphene is a 2D material with appealing electronic and optoelectronic properties. It is a zero-bandgap material with valence and conduction bands meeting in a single point (Dirac point) in the momentum space. Its conductivity can be changed by shifting the Fermi level energy via an external electric field. This important property determines broadband and tunable absorption at optical frequencies. Moreover, its conductivity is a complex quantity, i.e., Graphene exhibits both electro-absorption and electro-refraction tunability, and this is an intriguing property for photonic applications. For example, it can be combined as an active material for silicon waveguides to realize efficient detectors, switches, and modulators. In this article, we review our results in the field, focusing on graphene- based optical modulators integrated on Silicon photonic platforms. Results obtained in the fabrication of single and double-layer capacitive modulators are reported showing intensity and phase modulation, resilience of the generated signals to chromatic dispersion because of proper signal chirp and operation up to 50 Gb/s
Polarization and inteval-independent wavelength conversion at 2.5 Gb/s by means of bi-directional four-wave mixing in semiconductor optical amplifiers
No full textA simple and low-power optical limiter for multi-GHz pulse trains
Full text linkWe study the limiting-amplification capability of a saturated Semiconductor Optical Amplifier (SOA) followed by an optical band-pass filter. We experimentally demonstrate that this simple optical circuit can be effectively exploited to realize a low-power optical limiter for amplitude-modulated pulse trains at multi-GHz repetition rate. We report very large amplitude-modulation-reduction factors for the case of 20 and 40 GHz pulse trains that are super-imposed with modulating frequencies ranging from 100kHz to several GHz. (C) 2007 Optical Society of America
Comb line multiplication in an inp integrated photonic circuit based on cascaded modulators
No full textWe report the broadband characterization of an indium phosphide monolithically integrated optical frequency comb generator based on cascaded modulators. The device consists of a dual-drive Mach-Zehnder modulator (MZM), two cascaded phase modulators, and is also equipped with an integrated laser source, resulting in an extremely compact device, tunable both in wavelength and comb line frequency. Comb generation is shown in the range 4 to 8 GHz, and comb line multiplication is demonstrated, for the first time in an integrated device, exploiting the dual-drive configuration of the MZM. In particular, by feeding the MZM upper and lower arms with two synchronous sinusoidal RF signals, where one signal frequency is multiple of the others. At the repetition rate of 1 GHz, this technique allows to obtain up to 55 comb lines within a 3 dB power variation. A characterization of the comb phase noise when line multiplication is performed is also reported
Lithium Niobate on Insulator Technology for applications in the 1064 nm Window
No full textThin film lithium niobate (TFLN) enables a high-performance integration platform thanks to its superior electro-optic properties and broad transparency range. In this contribution, we discuss preliminary results toward the exploitation of TFLN in the 1064nm window, further enhancing its versatility for telecommunications and sensing applications
Resolution Limits in Optical Microring Modulators for Applications in Neuromorphic Photonics
No full textNeuromorphic photonic devices are promising for overcoming limitations in AI processing faced by traditional computing architectures. An analytical technique for determining the resolution limits introduced by photonic link distortions and noise is applied to microring modulators, with optimal resolution exhibited by a critically coupled ring
Comb Line Multiplication in an Integrated Optical Frequency Comb Generator
No full textWe demonstrate frequency-comb tone multiplication in an InP photonic integrated comb generator made of cascaded modulators. Tone multiplication is achieved driving the dual-drive MZM on the chip with an RF signal and one submultiple
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