1,721,145 research outputs found

    Steps towards the hyperfine splitting measurement of the muonic hydrogen ground state: pulsed muon beam and detection system characterization

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    The high precision measurement of the hyperfine splitting of the muonic-hydrogen atom ground state with pulsed and intense muon beam requires careful technological choices both in the construction of a gas target and of the detectors. In June 2014, the pressurized gas target of the FAMU experiment was exposed to the low energy pulsed muon beam at the RIKEN RAL muon facility. The objectives of the test were the characterization of the target, the hodoscope and the X-ray detectors. The apparatus consisted of a beam hodoscope and X-rays detectors made with high purity Germanium and Lanthanum Bromide crystals. In this paper the experimental setup is described and the results of the detector characterization are presented

    Wavelength sensitive device for wavelength stabilization

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    A device for stabilizing the operating wavelength () of an electro-optical component having a nominal operating wavelength (0) by a wavelength influencing circuit adapted to be driven by a control signal. The device comprises a semiconductor photodiode adapted to be impinged upon by the radiation generated and/or processed by the component and to generate an output signal which is indicative of a difference of the wavelength of the radiation (() with respect to the nominal operating wavelength (0, i). The semiconductor photodiode includes a plurality of layers jointly defining two opposite diodes generating opposite photocurrents as a result of radiation impinging onto the photodiode. The opposite photocurrents are adapted to generate the control signal to effect the stabilization action

    Germanium on Silicon for Near-Infrared Light Sensing

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    We review near-infrared detectors in germanium grown on silicon. We discuss pn and pin photodiodes based on Ge deposited on Si by a number of techniques, including thermal evaporation; the optical and electronic characterization of Ge-on-Si heterostructures using various approaches to minimize the density of defects; and compatibility issues with standard fabrication processes for Si electronics. We describe in greater detail the most promising devices realized by us and operating either at normal incidence or in guided-wave geometries, with applications to high-speed optical receivers, as well as image sensors

    From source to sink: the path to efficient energy harvesting with LEDs and displays

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    In the last three decades, light emitting diodes (LEDs) have represented a breakthrough innovation for optoelectronic applications. From optical communication to lighting and compact displays, LEDs are nowadays the device of choice in all those fields where high fluence, low power consumption and high pixel density are required. While LEDs are usually designed to maximize their performance in terms of light emission, they share the same materials and basic structure with solar cells. This similarity suggests to exploit LEDs in photovoltaic mode to be operated for harvesting energy from light in the environment. Despite the apparent simplicity of this approach, only a few examples to this extent are available in literature and several technical aspects of the corresponding implementation of LEDs as energy harvesters remain unexplored. Hereby, we report on recent progress in employing LEDs in the photovoltaic mode for energy harvesting and discuss future research directions, advocating increased efforts towards the exploitation of LEDs and LED-displays for the reduction of the energy footprint of portable appliances and electronic devices
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