308 research outputs found
III-V high mobility semiconductors for advanced CMOS applications: Epitaxial growth and in-situ passivation
MBE studies for In0.53Ga0.47As growth using strained buffer layers and in-situ high-k gate passivation
Synchrotron radiation and conventional X-ray source photoemission studies of epitaxial g-Al2O3 thin films grown on Si(111) & Si(001) substrates by molecular beam epitaxy
High oxidation state at the epitaxial interface of g-Al2O3 thin films grown on Si(111) and Si(001)
X-ray photoelectron diffraction study of thin Al2O3 films grown on Si(111) by molecular beam epitaxy
Encapsulation study of MOVPE grown InAs QDs by InP towards 1550 nm emission
status: Publishe
Self-regulating plasma-assisted growth of epitaxial BaBiO<sub>3</sub> thin-film on SrTiO<sub>3</sub>-buffered Si(001) substrate
sponsorship: The authors would like to thank process and hardware engineers: Hans Costermans and Kevin Dubois for their great support on the MBE cluster tool, as well as Johan Desmet and Johan Meersschaut for RBS operations and data analysis. This research has received funding from the European Research Council (ERC) under the European Union's Horizon 2020 research and innovation program (Grant Agreement No. 864483). (European Research Council (ERC) under the European Union|864483, European Research Council (ERC)|864483)status: Publishe
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