7,112 research outputs found
ANALISA SISTEM MANAJEMEN TERHADAP KELANGSUNGAN BISNIS DARI BENGKEL OTOMOTIF CHUNG SERVICE (CS, getdate())
No full textANALISA SISTEM MANAJEMEN TERHADAP KELANGSUNGAN BISNIS DARI BENGKEL OTOMOTIF CHUNG SERVICE (CS, getdate()) - Process Business, Business Process Re-Engineering, Visi, Misi, Critical Success Factor, Balanced Scorecard
Nonstationary Response Analysis of Offshore Guyed Tower Subjected to Earthquake Loadings
No full textA pharmacoeconomic analysis of atypical antipsychotics and haloperidol in first-episode schizophrenic patients in Taiwan
No full textPHOTOEMISSION-STUDY OF THE SI(111)6X1-CS SURFACE
No full textWe report results of a photoemission study, using synchrotron uv and x-ray radiation, for Cs adsorption on the clean Si(111)7X7 surface at an elevated temperature with an emphasis on the Si(111)6X1-Cs surface. From the analysis of the Cs 4d and Si 2p core-level spectra, we find that even at 540 degrees C Cs atoms are adsorbed at adatom and rest atom sites at the initial stage, and successive deposition of Cs induces a reconstruction of the substrate to the 6X1 phase via 3X1. In the case of the 6X1 surface there are two surface components, S-1' and S-2', originated from the Si bonded to Cs atoms and the unbonded Si atoms, respectively. The saturation Cs coverage of the 6X1 surface is estimated to be 2/3 ML. We have also observed a surface state SS1' at about 0.49 eV below the Fermi edge in the valence band and the semiconducting nature of the 6X1 surface. The physical implications of these experimental observations are discussed within the framework of the previously proposed structural models.open1112sciescopu
ELECTRONIC EXCITATIONS ON THE ALKALI-METAL (NA,CS)-ADSORBED SI(111)7X7 SURFACES
No full textElectronic excitation spectra of the alkali-metal (AM) (Na,Cs)-adsorbed Si(111)7 x 7 surfaces have been investigated by using high-resolution electron energy loss spectroscopy. We find that AM induces metal-semiconductor transitions at the early stage of adsorption by completely filling half-filled Si adatom dangling-bend states. A loss peak of energy less than 0.31 eV appears as a precursor of the semi conducting phases, which disappears with increasing coverage, resulting in the formation of energy gaps of 0.43 eV and 1.08 eV for Cs and Na, respectively. Both Cs- and Na-adsorbed surfaces become metallic at saturation, in sharp contrast with the semiconducting K-saturated surface. We discuss the physical origin of the AM-induced loss peaks and its implications for the electrical phase transitions.X1114sciescopu
Band modification of graphene by using slow Cs+ ions
No full textWe report new wide band gap engineering for graphene using slow Cs+ ions, which allows both fine-tuning and on-off switching capability of the band gap in a range suitable for most applications without modifying or deteriorating the relativistic nature of the Dirac fermions. The doping of Cs+ ions opens the band gap up to E-g = 0.68 eV, which can be closed completely by adding neutral Cs atoms, as observed in angle-resolved photoemission spectroscopy. The operating mechanism of this band gap engineering is understood by a simple capacitor model, which is fully supported by the density-functional theory calculations.1164sciescopu
PiLa-CS Professional Learning Community - Workshop 2 Resources
No full textDuring the Summer of 2021 and 2022, the Participating in Literacies and Computer Science (PiLa-CS) Research Practice Partnership convened and supported a community of practice to learn more about how to enable better CS teaching for emergent bilinguals. These are materials from Workshop 2 of the PLC.Sponsored by the National Science Foundation under NSF grant CNS-1738645 and DRL-1837446. Any opinions, findings, and conclusions or recommendations expressed in this material are those of the author(s) and do not necessarily reflect the views of the National Science Foundation
A new monolithic thermal inkjet printhead using single crystalline silicon island as a heating resistor isolated by oxidized porous silicon
No full textA new monolithic thermal inkjet printhead using single crystalline silicon island as a heating resistor is proposed. The n(+) silicon island was fabricated by full isolation by porous oxidized silicon (FIPOS) using double diffusion. The heating resistor is thermally and electrically isolated from the silicon substrate by oxidizing the porous silicon; The fabricated thermal inkjet, printhead has a simple structure because high quality thermal oxide can be used as a passivation layer
Translanguaging Pedagogy in CS Ed
No full textEpisode 3: Translanguaging pedagogy in CS Education
This video looks at how multilingual students already use translanguaging in their computer science classes and discusses how CS educators can further support them with translanguaging pedagogy, a framework that prompts teachers to consider their stance, design, and shifts.
Featuring team members from Participating in Literacies and Computer Science (PiLa-CS), https://www.pila-cs.orgEpisode 3: Translanguaging pedagogy in CS Education
This video looks at how multilingual students already use translanguaging in their computer science classes and discusses how CS educators can further support them with translanguaging pedagogy, a framework that prompts teachers to consider their stance, design, and shifts.
Featuring team members from Participating in Literacies and Computer Science (PiLa-CS), https://www.pila-cs.orgSponsored by the National Science Foundation under NSF grant CNS-1738645 and DRL-1837446. Any opinions, findings, and conclusions or recommendations expressed in this material are those of the author(s) and do not necessarily reflect the views of the National Science Foundation
PHASE-SHIFTING TWYMAN-GREEN INTERFEROMETER UTILIZING NEMATIC AND CHOLESTERIC LIQUID-CRYSTAL CELLS
No full textWe show a phase shifting Twyman-Green interferometer utilizing a nematic liquid crystal (NLC) cell and a cholesteric liquid crystal (CLC) cell. NLC cell is used as a phase shifter (PS) and CLC cell is used as an intensity stabilizer. The NLC PS is designed to induce a phase shift of 2 pi rad for He-Ne laser beam (lambda=632.8 nm) with the applied voltage of about 10 V, and a CLC cell which is designed to exhibit its selective reflection peak at 632.8 nm, is used to remove the fluctuation of the intensity of the interferogram. The interferometer system is evaluated by testing a concave mirror surface and the result is discussed
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