54,725 research outputs found
Validity of the Novel Taiwan Lymphoscintigraphy Staging and Correlation of Cheng Lymphedema Grading for Unilateral Extremity Lymphedema
No full textOBJECTIVE: The aim was to validate the new Taiwan Lymphoscintigraphy Staging, correlate it with Cheng Lymphedema Grading (CLG) and evaluate the treatment outcomes of unilateral extremity lymphedema. BACKGROUND: No consensus has been reached for diagnosis and staging for patients with lymphedema among medical specialties. METHODS: We included 285 patients with unilateral extremity lymphedema using lymphoscintigraphy. Lymphoscintigraphy was correlated to clinical symptoms and signs, and classified into normal lymphatic drainage, partial obstruction, and total obstruction. Inter- and intraobserver reliability of Taiwan Lymphoscintigraphy Staging, correlation between Taiwan Lymphoscintigraphy Staging and clinical findings were conducted. Patients were categorized in "surgical" (n = 154) or "nonsurgical" (n = 131) groups for outcome evaluation. RESULTS: Lymphoscintigraphy found 11 patients (3.9%) with normal lymphatic drainage, 128 (44.9%) with partial obstruction, and 146 (51.2%) with total obstruction. Taiwan Lymphoscintigraphy Staging showed high interobserver agreement [intraclass correlation coefficient: 0.89 (95% confidence interval, 0.82-0.94)], and significantly correlated to computed tomography volumetric difference (r = 0.66, P < 0.001) and CLG [intraclass correlation coefficient: 0.79 (95% confidence interval 0.72-0.84)]. At a mean follow-up of 31.2 ± 2.9 months, significant improvement in the circumferential difference (from 23.9% ± 17.6% to 14.6% ± 11.1%; P = 0.03) with a mean circumferential reduction rate of 40.4% ± 4.5% was found in surgical group. At a mean follow-up of 26.6 ± 8.7 months, the nonsurgical group had increase of mean circumferential difference from 24.0% ± 17.2% to 25.3% ± 19.0% (P = 0.09), with a mean circumferential reduction rate was -1.9% ± 13.0%. CONCLUSIONS: The Taiwan Lymphoscintigraphy Staging is a reliable diagnostic tool, correlated with clinical findings and CLG, aiding in the selection of the appropriate treatment to achieve favorable long-term outcomes in unilateral extremity lymphedema
Journal for Geometry and Graphics
No full textThe singular coincidence in 2022, 25th anniversary of the publication of the first issue of the Journal of Geometry and Graphics (JGG), 30th anniversary of the establishment of the International Society for Geometry and Graphics (ISGG), and 80th birthday of Hellmuth Stachel, Professor of Geometry at the Technical University of Vienna (now retired), founder and former Editor in Chief of the JGG, and co-founder of ISGG, suggested the idea of this special issue.
The Editorial Board, formed by the current Editor in Chief who launched the proposal, the President, the Vice-Presidents, and the Treasurer of ISGG, decided to publish the issue as part of the JGG series, in order to reach the audience of readers familiar with the journal, and with the person to whom this issue is dedicated.
The volume includes two editorial sections, “Personal Memories” and “Scientific Contri butions”, in the aim of reflecting the wide spectrum of competences and interests of Hellmuth Stachel, deepened and shared in a life actively spent between research and education, without missing some personal items and anecdotes.
“Personal Memories” consist of short contributions written by people being, or having been, closely connected with Hellmuth Stachel over more than three decades, who share their personal records about his role in science, education, and community services.
“Scientific Contributions” refer to the world wide scientific impact of Hellmuth Stachel, and consist of a number of papers on topics related to Geometry and Graphics, written by authors of various backgrounds and generations, invited from the three ISGG world regions (Asia/Australia/Oceania, Europe/Near East/Africa, North America/South America).
May this special issue celebrating such an exemplary academic profile, inspire all the readers, as well as the whole JGG and ISGG communities, and, why not, initiate a new editorial line inside the JGG series.
On behalf of JGG and ISGG, we warmly address to Professor Hellmuth Stachel our birthday wishes, and cordial greetings to his family and his wife Mrs. Henrike.
The Guest Editorial Board of JGG 26/1
Liang-Yee Cheng, Luigi Cocchiarella, Hans-Peter Schr ̈ocker, Kumiko Shiin
Macromodeling of Coupled-Domain MEMS Devices with Electrostatic and Electrothermal Actuations
No full textGamma-irradiation effect on electrical properties of SiO2 gate dielectric of MOS structure
No full textThe total dose effect of 60Co gamma-irradiation on MOS (metal-oxide-semiconductor) structure of Al/SiO2/p-Si with different insulation layer thickness has been investigated in this article. MOS capacitors with oxide layer thickness of 5nm/19nm/29nm and electrode area of 1mm 2 were prepared using thermal oxidation method. Each structure was stressed with no bias during 60Co gamma-source irradiation with the total dose of 100k/500k/1Mrad. The low and high frequency C-V characteristic of each structure was measured at room temperature before and after gamma-irradiation. Besides of the electric properties, Atomic Force Microscopy (AFM), Grazing Incidence X-ray Diffraction (XRD), and X-ray Photoelectron Spectroscopy (XPS) with Ar+ etching were also measured before and after different total dose gamma-irradiation. AFM results showed that the surface of the oxide was relatively smooth with the roughness under 5%. Low and high frequency C-V results indicated that the interfacial states between Si and SiO2 and oxide traps varied with insulation layer thickness and different total dose. On the other hand, the XRD property change under gamma irradiation differs with oxide layer thickness. And the Si 2p peak and O 1s peak result derived from the XPS drifted with different total dose and oxide layer thickness. These results offered necessary theory assistance for the nuclear hardening of the microelectronic devices with ultrathin insulation layer, which can advance the safety of weapons in the high-tech warfare. © 2012 IEEE
The causal induction from the theory of causal power of Cheng
No full textUna de las teorías centrales dentro de la explicación de la inducción causal (i.e. el proceso de inferencia que permite a las personas identificar causas en la cotidianidad) es la Teoría del Poder Causal que Patricia Cheng desarrolló en 1997 y que ha venido defendiendo desde esa época (Cheng, 1997; Holyoak y Cheng, 2011). Dicha teoría pretende superar los tradicionales modelos de mecanismo y los simples modelos de covariación que hasta el momento se consideraban como la explicación del proceso de inducción causal. Sin embargo la complejidad del modelo matemático que la sustenta la ha hecho poco accesible a la comunidad no especializada que se pueda interesar en este campo. El propósito del presente artículo es, entonces, realizar una introducción a la teoría de poder causal en la que se muestra no sólo sus ventajas explicativas frente a los otros modelos, sino una reconstrucción sencilla del modelo matemático que la sustenta.One of the central theories within the explanation of the causal induction (i.e. , the inference process that allows the people identify causes in the everyday life) is the Theory of Causal Power that Patricia Cheng development in 1997 and that has been advocating since that time (Cheng, 1997; Holyoak &amp; Cheng, 2011). This theory seeks to overcome the traditional mecha-nism models and simple models of co that until the time they were considered as an explanation of the process of causal induction. However the complexity of the mathematical model that sustains them has done little accessible to the non-specialized community that may be of interest in this field. The purpose of this article is, then, make an introduction to the Theory of Causal Power that shows not only its ex-planatory advantages compared to other models, but a simple reconstruction of the mathematical model that underpins it
ISGG: Cooperative Mission in the AI Era
No full textAt the 21st International Conference on Geometry and Graphics (ICGG2024, August, 2024), an international panel was organized with the In- stitutional Members and Associated National Organizations of ISGG to discuss cooperative mission in the AI era and its relation to the International Society for Geometry and Graphics. This is a summary of the discussion with the panel members Luigi Cocchiarella (Italy), Liang-Yee Cheng (Brazil), Michal Zamboj (Czech Republic), Hans-Peter Schro ̈cker (Austria), Hongming Cai (China), Eva Wohlleben (Germany), Stefano Bertocci (Italy), and Hirotaka Suzuki (Japan)
Singaporean mothers' perception of their three-year-old child's weight status: A cross-sectional study
Get PDFSingapore National Research Foundation; National Medical Research Council (NMRC), SingaporeFull Author List: Cheng T.S.; Cheng T.; Loy S.; Cheung Y.; Chan J.; Tint M.; Godfrey K.; Gluckman P.; Kwek K.; Saw S.; Chong Y.; Lee Y.; Yap F.; Lek N.; Sheppard A.; Chinnadurai A.; Goh A.; Rifkin-Graboi A.; Qiu A.; Biswas A.; Lee B.; Broekman B.; Quah B.; Shuter B.; Chng C.; Ngo C.; Hsu S.; Bong C.; Henry C.; Chee C.; Fok D.; Yeo G.; Inskip H.; Chen H.; Van Bever H.; Magiati I.; Wong I.; Lau I.; Kapur J.; Richmond J.; Holbrook J.; Gooley J.; Tan K.; Niduvaje K.; Singh L.; Su L.; Daniel L.; Shek L.; Fortier M.; Hanson M.; Chong M.; Rauff M.; Chua M.; Meaney M.; Teoh O.; Wong P.; Agarwal P.; Van Dam R.; Rebello S.; Chong S.; Cai S.; Soh S.; Lim S.; Rajadurai V.; Stunkel W.; Han W.; Pang W.; Goh Y.; Chan Y.</p
Measurement of b-hadron branching fractions for two-body decays into charmless charged hadrons
Get PDFBased on data corresponding to an integrated luminosity of 0.37 fb−1 collected by the LHCb experiment in 2011, the following ratios of branching fractions are measured: B(B0→π+π−)/B(B0→K+π−)=0.262±0.009±0.017,(fs/fd)⋅B(B0s→K+K−)/B(B0→K+π−)=0.316±0.009±0.019,(fs/fd)⋅B(B0s→π+K−)/B(B0→K+π−)=0.074±0.006±0.006,(fd/fs)⋅B(B0→K+K−)/B(B0s→K+K−)=0.018+0.008−0.007±0.009,(fs/fd)⋅B(B0s→π+π−)/B(B0→π+π−)=0.050+0.011−0.009±0.004,B(Λ0b→pπ−)/B(Λ0b→pK−)=0.86±0.08±0.05, where the first uncertainties are statistical and the second systematic. Using the current world average of B(B0→K+π−) and the ratio of the strange to light neutral B meson production f s /f d measured by LHCb, we obtain: B(B0→π+π−)=(5.08±0.17±0.37)×10−6,B(B0s→K+K−)=(23.0±0.7±2.3)×10−6,B(B0s→π+K−)=(5.4±0.4±0.6)×10−6,B(B0→K+K−)=(0.11+0.05−0.04±0.06)×10−6,B(B0s→π+π−)=(0.95+0.21−0.17±0.13)×10−6.
The measurements of B(B0s→K+K−) , B(B0s→π+K−) and B(B0→K+K−) are the most precise to date. The decay mode B0s→π+π− is observed for the first time with a significance of more than 5σ
Maintenance techniques for rechargeable battery using pulse charging
No full textAuthor name used in this publication: Cheng K. W. E.Author name used in this publication: Ho Y. L.Refereed conference paper2006-2007 > Academic research: refereed > Refereed conference paperVersion of RecordPublishedPublisher permissio
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