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    The analyses on the surface properties of the annealed-diamond membrane

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    Polycrystalline diamond films were deposited using methane/hydrogen gas mixture on silicon substrates by a microwave plasma chemical vapor deposition (MPCVD) system. From X-ray photoelectron spectroscopy (XPS) analysis, the oxygen & the C signals were observed for the as-deposited diamond film. The oxygen signal was due to physiosorbed water or weakly bound oxygen species. After the 800 8C annealing process, the Si/Si (99.8 eV), Si/O (102.8 eV), Si/Ox (104.8 eV) & the C/O (286.5 eV) bonds appeared for the surface of the diamond film. Moreover, it was shown that the film quality was improved by the 800 8C annealing process. However, it was found that the oxygen signal decreased & the silicon & silicon/oxide bonds almost disappeared for the top surface of the annealed-diamond membrane. It was suggested the oxidized dangling bonds & the silicon components on diamond crystallite surfaces were etched away partly by back-etching process. Furthermore, from Auger electron spectroscopy (AES) analyses, the oxygen & the silicon signals were approximately estimated to be more than 1100 A ° from the bottom surface of annealed-diamond membrane. This indicated that the non-diamond components (included the SiC, SiO2 & amorphous carbon, etc.) in the diamond/silicon interface might be thermally diffused through the grain boundaries to the top surface of the annealeddiamond membrane. These findings may be influential in the development on the characteristic of diamond electrical devices in the future
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